0Q15 Search Results

1RFZ34

Abstract: STM TO-220 marking IRFZ34 IRFZ34 international
Contextual Info: International ioR Rectifier HEXFET Power MOSFET • • • • • 4Û5S452 0Q1577Ö STM « I N R PD-9.509B IRFZ34 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

transistor code 458 055

Abstract: ha2-2620 HA7-2620
Contextual Info: HARRIS SENICOND SECTOR h a r r is ioe D | 14305271 0Q151S0 7 | HA-2620/22/25 Very Wideband, Uncompensated Operational Amplifiers Features Applications • Gain B an dw id th P ro du ct A y > 5 . 10 0 M H z • V ideo an d R.F. A m plifier

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 71b4142 0Q151b4 54e! I KMM5362000B/BG SM6K DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tnAc tc A c tRC 60ns 15ns 110ns KM M 5362000B-7 70ns 20ns 130ns KMM5362000B-8 . 80ns

Contextual Info: International to r 4635452 0Q152D2 156 B I N R PD-9.874 IRFI9620G R e c tifie r HEXFET Power MOSFET • • • • • • • INTERNATIONAL R E C T I F I E R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel

RZ2731B60W

Abstract: FO-57D
Contextual Info: _I l N AMER PHILIPS/DISCRETE □ bE D • _ ^53131 0Q15537 7 RZ2731B60W" T - 3 3 - 5 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 2,7 to 3,1 GHz.

Contextual Info: GEC PLESSEY SENICONDS 43E PLESSEY SEM ICONDUCTORS J> • 37bôS5S 0Q155bl ■= M P L S B : PDSP16318/PDSP16318A COMPLEX ACCUMULATOR T h e P D S P 16318 c o n ta in s tw o in d e p e n d e n t 2 0 -b it A d d e r/S u b tra c to rs c o m b in e d w ith a c c u m u la to r registers

MN3881S

Contextual Info: Panasonic Other MOS LSIs MN3881S PAL-Compatible CCD Video Signal Delay Element • Overview ■ Pin Assignment The MN3881S is a CCD signal delay elem ent for video signal processing applications. It contains such com ponents as a shift reg ister clock VBIASC

Contextual Info: FAST CMOS 20-BIT BUFFERS IDT54/74FCT16827AT/BT/CT/ET IDT54/74FCT162827AT/BT/CT/ET Integrated Device Technology» Inc. FEATURES: DESCRIPTION: • Common features: T he ID T 5 4 /7 4 F C T 1 6 8 2 7 A T /B T /C T /E T and ID T 54 / 74FCT162827AT/BT/CT/ET 20-bit buffers are built using

mJI 1032

Abstract: T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60
Contextual Info: Ordering number: EN5055 CMOS LSI LC382161T-17 No. 5065 SA\YO 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x 16-bit x 2-bank organization. These DRAMs feature a

CY101E383

Abstract: diode SKE 39
Contextual Info: W r CY10E383 CY101E383 CYPRESS ECL/TTL/ECL Translator and High-Speed Bus Driver Features Functional Description • B iC M O S for optim um speed/power • H igh speed max. — 2.5 n s Ipu TTL-to-EC L — 3.5 n s tpo EC L-to-TTL The CY10/101E383 is a new-generation

Contextual Info: w g m HEW LETT mLUM PA C K A R D Isolated 15-bit A/D Converter Technical Data HCPL-7860 HCPL-0870, -7870 Features • 12-bit Linearity • 700 ns Conversion Time Pre-Trigger Mode 2 • 5 Conversion Modes for Resolution/Speed Trade-Off; 12-bit Effective Resolution

WD33C93A

Contextual Info: | ‘ .i v - r f " - .- j — ‘ * ! T 4 F •— md . - !— S *4E » WESTERN DIGITAL CORP • « m a s s a o o is s a H m « o c T - 3 2 - ^ 3 - ^ 7 / 1 " .' T * WD33C93A » * . " ' / . I '- * # * «1

Contextual Info: 64K x 16 Static RAM Module Features Functional Description • High-densitv 1-megabit SRAM module • High-speed CMOS SRAMs — Access time of 15 ns • Low active power — 2.2W max. • SMD technology • TTL-compatible inputs and outputs • Pinout compatible with CYM1611

Contextual Info: DS2152 PRELIMINARY DALLAS DS2152 Enhanced T1 Single Chip Transceiver se m ic o n d u c to r FEATURES PIN ASSIGNMENT • Complete DS1/ISDN-PRI transceiver functionality • Line interface can handle both long and short haul trunks • 32-bit or 128-bit crystal-less jitter attenuator

7006C

Abstract: TOA8
Contextual Info: '- / Ú - FUJITSU S3E L TD 3 7 4 cl75b G D 0 3 3 S S D .2 3 ^ /7 TOb » F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 2 6 0 A -70/-80/-10 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260A is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

Contextual Info: n u N EW PRODUCT HB56G51236CC Series 524,288-WordX 36-Bit High Density Dynamic RAM Card 0H IT A C H 1 Rev.2 Ju n . 30,1992 Description The HB56G51236CC is a 512KX36 dynam ic RA M Card, mounted 4 pieces of 4M bit D RA M HM 514900LTT sealed in T S O P package.

Contextual Info: ADVANCE 256K • • • • • • • • • Fast access times: 4.5,5,5.5,6 and 7ns Fast OE# access time: 4.5,5,5.5 and 6ns +3.3V +0.3V/-0.165V power supply Vcc Separate +2.5V +0.4V/-0.125V isolated output buffer supply (VccQ) 3.3V-tolerant inputs SNOOZE MODE for reduced power standby

SMT160

Contextual Info: ADVANCE M IC R O N 1 MT16D T 164(S), MT16D(T)464 1 MEG, 4 MEG x 64 DRAM MODULES DRAM MODULE 1 MEG, 4 MEG x 64 8, 32 MEGABYTE, 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 168-pin,

Contextual Info: Panasonic For Information Equipment MN83876A Liquid Crystal Display Panel Source Driver • Overview The M N 83876A converts digital display data from a per­ sonal com puter or engineering workstation into analog signal voltages for driving thin-film transistor color LCD panels.

tc 97101

Abstract: D472
Contextual Info: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out

Contextual Info: MICRON I MT4LC4M4A1 S 4 MEG X 4 DRAM TECHNOLOGY. INC. DRAM 4 MEG x 4 DRAM 4K REFRESH, 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process

Contextual Info: HEXFET Power M O S FE T • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance MÔ554S2 GG1SS3Ô 303 • INR PD-9.850 IRFIBC20G INTERNATIONAL RECTIFIER bSE D

Contextual Info: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.

Contextual Info: SONY CXK77B3611AGB* High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B3611AGB-5/6 is a high speed 1M bit 119 pin BGA Plastic Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a