0Q317 Search Results

Contextual Info: Philips Semiconductors bb 53^ 31 0Q317S T 63b NPN 1 GHz video transistors “ '— H A P X Product specification BFQ263; BFQ263A N AnER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a

BFQ234

Abstract: BFQ254 UBB364 SOT-172A
Contextual Info: Philips Semiconductors L jb £ 3 ^ 3 1 0Q31714 b7fl BBAPX NPN 1 GHz video transistor Product specification BFQ234; BFQ234/I b'lE T> N Af1ER PHILIPS/DISCRETE DESCRIPTION PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and

Contextual Info: Philips Semiconductors • b b S 3 T 31 D D 3 1 ? b fi 64T ■ NPN 1 GHz video transistor ^ i i — DESCRIPTION A P X ^^^Productspecification BFQ268; BFQ268/I ■ N AMER PHILIPS/DISCRETE b'lE D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a

Contextual Info: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699A Z Rev. 1.0 Dec. 27,1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1

HB56HW465

Contextual Info: HB56HW465DB Series 4196304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-666 Z Preliminary Rev. 0.0 Sep .17,1996 Description The HB56HW465DB Series is a 4 M x 64 Dynamic RAM Small Outline Dual In-line Memory Module (S. O. DIMM), mounted 4 pieces of 64-Mbit DRAM (HM5165165ATT) sealed in TSOP package and 1

QML-38535

Abstract: 320C80-50 17306A TIL Display SMD AH MRI circuit xxmx
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA REV SHEET 55 56 57 58 59 60 61 62 63 64 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 1 2 3 4 5 6 7 8 9 10 11 12 13 14 REV SHEET REV

Contextual Info: 3PE D • 7 T 5 |:] 2 3 7 GG317ÖD S ■ f Z 7 SGS-THOMSON ^7# 'P Z S -O S DC 34/DC 38/DC 42 S G S-THOMSON TRIGGER DIODES A P P L IC A T IO N S Thyristors and triacs triggering. ADVANTAG ES High reliability glass passivation insuring parame­ ter stability and protection against junction conta­

Contextual Info: TOSHIBA TLCS-900 Series TM P93CM40/TMP93CM41 Low Voltage/Low Power CMOS 16-bit Microcontrollers TMP93CM40F/TMP93CM41F 1. Outline and Device Characteristics TMP93CM40/M41 are high-speed advanced 16-bit microcon­ trollers developed for controlling medium to large-scale equip­

Contextual Info: Philips Semiconductors ^53*131 0031743 341 • APX PNP 1 GHz video transistors ^ Product specification BFQ255; BFQ255A N AMER PHILIPS/DISCRETE FEATURES b'lE ]> PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product

KM29V64001T

Abstract: v6400
Contextual Info: KM29 V 6 4 0 0 1 T Fl ash ELECTRONICS 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64001T/R is a 8M 8,388,608 x8 bit NAND Flash memory with a spare 256K(262,144)x8 bit. Its NAND cell provides the most cost-effective solution for

transistor bt 808

Abstract: BFQ235A BFQ255A BFQ235 transistors C2035 CECC50000 BFQ235 BFQ255
Contextual Info: bbS3T31 P hilips Sem iconductors 0 031716 B I B lB^AF|X^^^^^^roduc^pecification NPN 1 GHz video transistors — — ^ BFQ235; BFQ235A N AMER PHILIPS/DISCRETE b'îE D — PINNING FEATURES • High breakdown voltages DESCRIPTION PIN • Low output capacitance