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    1 3T SOT Search Results

    1 3T SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
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    1 3T SOT Price and Stock

    Bourns Inc CDSOT23-T15LC

    ESD Protection Diodes / TVS Diodes TVS Diode Array 15VOLT LOW CAP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CDSOT23-T15LC 11,635
    • 1 $0.55
    • 10 $0.319
    • 100 $0.273
    • 1000 $0.209
    • 10000 $0.156
    Buy Now

    Bourns Inc CDSOT23-T15C-Q

    ESD Protection Diodes / TVS Diodes TVS Diode 15V 500W BIDIR SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CDSOT23-T15C-Q 10,989
    • 1 $0.51
    • 10 $0.377
    • 100 $0.273
    • 1000 $0.192
    • 10000 $0.143
    Buy Now

    Bourns Inc CDSOT23-T12LC

    ESD Protection Diodes / TVS Diodes TVS Diode Array 12VOLT LOW CAP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CDSOT23-T12LC 10,872
    • 1 $0.59
    • 10 $0.427
    • 100 $0.279
    • 1000 $0.194
    • 10000 $0.164
    Buy Now

    Bourns Inc CDSOT23-T12

    ESD Protection Diodes / TVS Diodes TVS Diode Array 12VOLT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CDSOT23-T12 10,682
    • 1 $0.44
    • 10 $0.36
    • 100 $0.245
    • 1000 $0.125
    • 10000 $0.125
    Buy Now

    Bourns Inc CDSOT23-T15

    ESD Protection Diodes / TVS Diodes TVS Diode Array 15VOLT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CDSOT23-T15 8,911
    • 1 $0.44
    • 10 $0.378
    • 100 $0.263
    • 1000 $0.167
    • 10000 $0.125
    Buy Now

    1 3T SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-343 Plastic-Encapsulate Diodes SOT-343 RB480K SCHOTTLKY BARRIER DIODE 1 4 FEATURES z Low current rectification z High reliability 2 3 MARKING: 3T Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


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    PDF OT-343 RB480K 100mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-553 Plastic-Encapsulate Diodes SOT-553 RB480V SCHOTTLKY BARRIER DIODE FEATURES z Low current rectification z High reliability 5 1 4 2 3 MARKING: 3T Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃


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    PDF OT-553 OT-553 RB480V 100mA

    ssl2108

    Abstract: SSL21082 sot12 SSL21081T Application Notes
    Text: SSL21081T/2T/3T/4T GreenChip drivers for LED lighting Rev. 2 — 6 December 2011 Preliminary data sheet 1. General description The SSL2108X is a range of high-voltage Integrated Circuits ICs , intended to drive LED lamps in general lighting applications.


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    PDF SSL21081T/2T/3T/4T SSL2108X SSL21081T ssl2108 SSL21082 sot12 SSL21081T Application Notes

    AN11040

    Abstract: SSL21082 SSL21081T Application Notes SSL21083 SSL21081 SSL21084 ssl21082T
    Text: SSL21081T/2T/3T/4T GreenChip drivers for LED lighting Rev. 3.1 — 22 February 2012 Product data sheet 1. General description The SSL2108X is a range of high-voltage Integrated Circuits ICs , intended to drive LED lamps in general lighting applications. The main benefits of the product family are:


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    PDF SSL21081T/2T/3T/4T SSL2108X SSL21081T AN11040 SSL21082 SSL21081T Application Notes SSL21083 SSL21081 SSL21084 ssl21082T

    692B

    Abstract: circuit fluorescent tube 24v FX3440 INVERTOR APPLICATION NOTE invertor lcd invertor ZTX692B ZTX690B AN14 FMMT489
    Text: Design Note 22 Issue 2 June 1995 LCD Display Fluorescent Backlighting C1 Typical transformer detail for 24V operation: RM8 FX3440, 0.1mm gap. W1 500T W2 3T W3 + W4 34T Note 1: For this circuit topology the collector-emitter only experiences a high voltage when the base has been


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    PDF FX3440, ZTX690B/ ZTX690B ZTX692B ZTX688B-696B 500mA FMMT489 FMMT491 FMMT618 DN22-1 692B circuit fluorescent tube 24v FX3440 INVERTOR APPLICATION NOTE invertor lcd invertor AN14

    marking us sot-563

    Abstract: No abstract text available
    Text: EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. • Lead−Free Solder Plating


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    PDF OT-563 marking us sot-563

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors b bS 3T 31 0D 3240D 22fl M A P V Product specification BGY587B CATV amplifier module N AMER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation


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    PDF 3240D BGY587B PINNING-SOT115C DIN45004B;

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bb 5 3 131 0 0 3 1 7 3 b E 3T • PNP 1 GHz video transistor APX Product specification BFQ253; BFQ253A N AUER PHILIPS/DISCRETE DESCRIPTION b'lE » ■ PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a


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    PDF BFQ253; BFQ253A BFQ233 BFQ253 0D3173T

    philips dl 701 application

    Abstract: philips dl 701 DC-DC SOT28 SOT261-3 IC-19 NE83Q92 NE83Q92A20 NE83Q92D philips dl 701 K NE83Q93
    Text: INTEGRATED CIRCUITS NE83Q92 Low-power coaxial Ethernet transceiver Product specification 1995 May 1 IC-19 Data handbook Philips Semiconductors PHILIPS PHILIPS is Material Copyrigh y -¿ii[ ô2b O Q Û ci?3T S 71 Philips Semiconductors Product specification


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    PDF NE83Q92 IC-19 NE83Q92 10base5) 10base2) OT261-3 MO-047AB 711Dfi2b philips dl 701 application philips dl 701 DC-DC SOT28 SOT261-3 NE83Q92A20 NE83Q92D philips dl 701 K NE83Q93

    Untitled

    Abstract: No abstract text available
    Text: TELEDYNE COMPONENTS 2ÛE 1 EW 3t S J L ^ J ^ i ^ !• ö T l T h O S OOOLi41]i 2 _ ü S D 1 1 0 7 , SD 1117 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Conflcwratton Sorted Chip» In Waffle Pack T0206AA TQ-1ÔÏ Package


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    PDF OOOLi41 T0206AA O-205AF TQ-39J O-226AA 14-Pin SD1107DD SD1107HD SEmQ780 SD1107N

    MMBC1621B2

    Abstract: MMBC1621B3 MMBC1621B4 top marking B4 sot23
    Text: M O T O R O L A SC -CDIODES/OPTO} :f 6367255 MOTOROLA SC 34 DE |t.3t,7SSS D03fl5fl0 1 3 4C CDIODES/OPTO 38280 D T -3 r ~ 0 ? SOT23 continued) MMBC1621 B2,3,4 d e v ic e no. SMALL-SIGNAL NPN TRANSISTORS TOP VIEW c | | • Designed for high-speed switching applications.


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    PDF MMBC1621 MMBC1621B2 MMBC1621B3 MMBC1621B4 top marking B4 sot23

    Trans Switching

    Abstract: SOT-23 MARKING T31 KSR1109 KSR2109
    Text: SAM SU N G SE M IC O N D U C T O R IN C KSR2109 14E j 7*11,111142 Û 0 0 7 1 2 7 4 I PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION T- 3T-I3 Bias Resistor Built In t SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • BuHt in bias Resistor (R=4.7KQ|


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    PDF KSR2109 KSR1109 OT-23 -10mA, Trans Switching SOT-23 MARKING T31 KSR1109

    Untitled

    Abstract: No abstract text available
    Text: REV. NC DATE DESCRIPTION 0 5 /D I/0 4 INITIAL RELEASE -5.1 û [.201] r—4.50 [.177] RECOMMENDED MOUNTING HOLE 6 .3 5 HEX ••35 HEX A - - 1 .5 0 UNŒSS 0 H B W B E 3 P K F E D WMENSBW WE h UUJHETERS, NUENSNN3 I N T 1 ARE II r o o A i> FOR CU 3T M O REFffiANCE MLY.


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    PDF 120mm

    FX1115

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 86D 0 1 7 7 8 otE » • D 3T T - ? Jl oomoib a 0 "7 BLX68 U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor tor use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. t has a capstan envelope with a moulded cap. All leads are isolated from the stud.


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    PDF BLX68 OT-48/3. 7Z61766 7Z61769 bb53131 FX1115

    SM6G14

    Abstract: triac 400v 80a GTO 100A 750V S6080b SM16G14 SH5J12U TOSHIBA PHASE CONTROL HIGH SPEED THYRISTORS 6111 triode TRIAC 1000A triac 1200V 50A
    Text: 9097250 TOSHIBA DISCRETE/OPTO 39C 0 2 2 1 6 3T DEj|TOTTSSGQ00E21b & THYRISTORS \ I PH A SE CO N TRO L THYRISTO RS Average On-State Current I P .4 8 -P .8 1 - » P e a k O f f - S ta te V oltage and R e v e rs e V oltage 100 V 200V O .IA SF 0R 1B 42 S F O R I D42


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    PDF 000221b SF0R1B42 SF0R1G42 SF0R3B42 SF0R3D42 SF0R3G42 SF0R3J42 SF1B12 SF1D12 SF1G12 SM6G14 triac 400v 80a GTO 100A 750V S6080b SM16G14 SH5J12U TOSHIBA PHASE CONTROL HIGH SPEED THYRISTORS 6111 triode TRIAC 1000A triac 1200V 50A

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA 6367254 "Üä SC Í X S T R S / R FJ M OT O RO L A SC CXSTRS/R M A XIM U M RATINGS »F|t:3t,7ES4 ODflSDMô S J"~ F 96D 8 2 0 4 8 1 T'Z9'/5 Value Sym bol M M BT5088 M M BT5089 Unit Collector-Emitter V oltage v CEO 30 25 V dc Collector-Base V oltage


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    PDF BT5088 BT5089 MMBT5088 MMBT5089 OT-23 O-236AA/AB)

    CBC 184 transistor

    Abstract: CNX35U Transistor 2TY CBC 184 c transistor
    Text: CNX35U CNX36U PM VO O I I Û U A L IT Y T E C H N O L O G I E S CORP S7E D 7 4 b b 6 5 1 G G G 4 53 4 EfiS • ■ 3T Y — % OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r TTL integrated circuits.


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    PDF CNX35U CNX36U E90700 0110b 74bbfl51 OT212. 74bbflSl 0DD4fl03 CBC 184 transistor CNX35U Transistor 2TY CBC 184 c transistor

    2SC17

    Abstract: 2SC1143 04S4 2SC1743 ihse 00456 2sc174
    Text: TOSHIBA {DISCRETE/OPTO} " 3T DE~| T D T 7 E 5 0 DQ[][]453 1 §~~ £097250 TOSHIBA <D I S C R E T E / O P T O m m m m /m m w x -iv z -y c r m 39C 0 0 4 5 3 O UH F—S o ¡ a « * . < y ?- y ? m O UHF~~S O High Speed Switching A pplications B a n d Lo w N o i s e A m p l i f i e r A p p l i c a t i o n s


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    PDF 2SC1743 2SC17 2SC1143 04S4 2SC1743 ihse 00456 2sc174

    2SC2116

    Abstract: OPTo F02
    Text: TOSHIBA { D I S C R E T E / O P T 0> O V H F — O V H F '"»• U H F 3T DeTJ T O T O S O □□□□3 7 S 7 - L o w N o i s e A n p l i f i e r 'J" M ^1* ID iff . 2.2 mm0 ^ M i . 2 .2 m m 0 n i-P a c k a j j e M A X I M U M R A T I N G S A p p l i c a t i o n


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    PDF DDDD37S p-31-fcS" 2SC2116 0D37C1 2SC2116 OPTo F02

    s8205

    Abstract: S-8205 TOSHIBA SCR
    Text: 3T TOSHIBA {D ISCR ET E/OPTO} 9097 2 5 0 T O S H I B A DE | SOTTESO DODDSb4 Q D I S C R E T E / O P T O W C ? D^-TTr-K n y ^ - c ? r-K T~* 39C 00564 _0_ _ o i KSSSfl Q j _ Band. O s c ill a to r A p p lic a tio n s . 3.0r - • W* M t -t • Po = 50niW (M in-)


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    PDF 50niW 05MAX S8205 150MHz s8205 S-8205 TOSHIBA SCR

    T460

    Abstract: t460 transistor C947 ic 4541 c947 transistor transistor 9619 M 9619 JT MARKING 2SB800 2SD1001
    Text: '> ' = ! > h =7 > Ì > ~ X 9 Silicon Transistor 2SD1001 N o -t — T 'i O ^ N x f ^ + - > 7 ; H K '> U h = 7 > i> 'X ^ K 7 -i 2SB 800 o P i mm) t ? >7° ' ) / > 9 >J T " f € ^ T " ë t t 0 Î B * , ifijIÎE, r^jhFE'C"t’o 1.5 ± 0.1 P T = 2 .0 W (0 .7 mm X 16 cm2- t e ^ -y


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    PDF 2SD1001 2SB800 OT-89) T460 t460 transistor C947 ic 4541 c947 transistor transistor 9619 M 9619 JT MARKING 2SD1001

    2SC3554

    Abstract: No abstract text available
    Text: -> I z i > h =7 > Silicon Transistor 2SC3554 N P N = ' h =ÿ — ft M i Æ i £ ^ ' > \s \d if >; □ V it iÿ j, h Tk-^PK^ -f 7'ffl mm Wl o j» /± T '& & o V cbo^300 ° '[jf-TlIìiS:- rJ Ê I> c l ^ M ì l X l Vd = V, mm) V ceo^300 V ò o 000 V T Y P. C = 2 300 p F ,


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    PDF

    TOP 948

    Abstract: BDS944 BDS946 BDS948 IEC134 MS80 T 948
    Text: Philips Components BDS944/946/948 Datasheet status Product specification date of issue April 1991 PNP Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


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    PDF BDS944/946/948 OT223) BDS943/945/947. OT223 BDS944 BDS946 BDS948 TOP 948 IEC134 MS80 T 948

    2SD1005

    Abstract: b10 lek 2SB804 2SD100
    Text: Silicon T ra n s is to r 2SD1005 f t W-MWÌ $ W i : mm 0 7 |-— t V o 2SB804 i 3 > 7° IJ y > ^ 'J Titm T" l ^ t . o ë ‘x > i f t i Î Œ, iHjhF'E ”(?~'f~0 PT = 2.0 W (0.7 mmX 16 cm2- t e 7 Ì VCEo > 80 V, hFE = 200 TYP. (Ic = 100 mA) »& -9 - ^ î _ x pBH Œ


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    PDF 2SD1005 2SB804 OT-89) PWS10 cycleS50 2SD1005 b10 lek 2SD100