1 3T SOT Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-343 Plastic-Encapsulate Diodes SOT-343 RB480K SCHOTTLKY BARRIER DIODE 1 4 FEATURES z Low current rectification z High reliability 2 3 MARKING: 3T Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-553 Plastic-Encapsulate Diodes SOT-553 RB480V SCHOTTLKY BARRIER DIODE FEATURES z Low current rectification z High reliability 5 1 4 2 3 MARKING: 3T Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

Contextual Info: Philips Sem iconductors b bS 3T 31 0D 3240D 22fl M A P V Product specification BGY587B CATV amplifier module N AMER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

Contextual Info: Philips Semiconductors bb 5 3 131 0 0 3 1 7 3 b E 3T • PNP 1 GHz video transistor APX Product specification BFQ253; BFQ253A N AUER PHILIPS/DISCRETE DESCRIPTION b'lE » ■ PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a

philips dl 701 application

Abstract: philips dl 701 DC-DC SOT28 SOT261-3 IC-19 NE83Q92 NE83Q92A20 NE83Q92D philips dl 701 K NE83Q93
Contextual Info: INTEGRATED CIRCUITS NE83Q92 Low-power coaxial Ethernet transceiver Product specification 1995 May 1 IC-19 Data handbook Philips Semiconductors PHILIPS PHILIPS is Material Copyrigh y -¿ii[ ô2b O Q Û ci?3T S 71 Philips Semiconductors Product specification

ssl2108

Abstract: SSL21082 sot12 SSL21081T Application Notes
Contextual Info: SSL21081T/2T/3T/4T GreenChip drivers for LED lighting Rev. 2 — 6 December 2011 Preliminary data sheet 1. General description The SSL2108X is a range of high-voltage Integrated Circuits ICs , intended to drive LED lamps in general lighting applications.

Contextual Info: TELEDYNE COMPONENTS 2ÛE 1 EW 3t S J L ^ J ^ i ^ !• ö T l T h O S OOOLi41]i 2 _ ü S D 1 1 0 7 , SD 1117 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Conflcwratton Sorted Chip» In Waffle Pack T0206AA TQ-1ÔÏ Package

AN11040

Abstract: SSL21082 SSL21081T Application Notes SSL21083 SSL21081 SSL21084 ssl21082T
Contextual Info: SSL21081T/2T/3T/4T GreenChip drivers for LED lighting Rev. 3.1 — 22 February 2012 Product data sheet 1. General description The SSL2108X is a range of high-voltage Integrated Circuits ICs , intended to drive LED lamps in general lighting applications. The main benefits of the product family are:

MMBC1621B2

Abstract: MMBC1621B3 MMBC1621B4 top marking B4 sot23
Contextual Info: M O T O R O L A SC -CDIODES/OPTO} :f 6367255 MOTOROLA SC 34 DE |t.3t,7SSS D03fl5fl0 1 3 4C CDIODES/OPTO 38280 D T -3 r ~ 0 ? SOT23 continued) MMBC1621 B2,3,4 d e v ic e no. SMALL-SIGNAL NPN TRANSISTORS TOP VIEW c | | • Designed for high-speed switching applications.

692B

Abstract: circuit fluorescent tube 24v FX3440 INVERTOR APPLICATION NOTE invertor lcd invertor ZTX692B ZTX690B AN14 FMMT489
Contextual Info: Design Note 22 Issue 2 June 1995 LCD Display Fluorescent Backlighting C1 Typical transformer detail for 24V operation: RM8 FX3440, 0.1mm gap. W1 500T W2 3T W3 + W4 34T Note 1: For this circuit topology the collector-emitter only experiences a high voltage when the base has been

Trans Switching

Abstract: SOT-23 MARKING T31 KSR1109 KSR2109
Contextual Info: SAM SU N G SE M IC O N D U C T O R IN C KSR2109 14E j 7*11,111142 Û 0 0 7 1 2 7 4 I PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION T- 3T-I3 Bias Resistor Built In t SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • BuHt in bias Resistor (R=4.7KQ|

Contextual Info: REV. NC DATE DESCRIPTION 0 5 /D I/0 4 INITIAL RELEASE -5.1 û [.201] r—4.50 [.177] RECOMMENDED MOUNTING HOLE 6 .3 5 HEX ••35 HEX A - - 1 .5 0 UNŒSS 0 H B W B E 3 P K F E D WMENSBW WE h UUJHETERS, NUENSNN3 I N T 1 ARE II r o o A i> FOR CU 3T M O REFffiANCE MLY.

FX1115

Contextual Info: N AUER PHILIPS/DISCRETE 86D 0 1 7 7 8 otE » • D 3T T - ? Jl oomoib a 0 "7 BLX68 U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor tor use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. t has a capstan envelope with a moulded cap. All leads are isolated from the stud.

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

Contextual Info: MOTOROLA 6367254 "Üä SC Í X S T R S / R FJ M OT O RO L A SC CXSTRS/R M A XIM U M RATINGS »F|t:3t,7ES4 ODflSDMô S J"~ F 96D 8 2 0 4 8 1 T'Z9'/5 Value Sym bol M M BT5088 M M BT5089 Unit Collector-Emitter V oltage v CEO 30 25 V dc Collector-Base V oltage

CBC 184 transistor

Abstract: CNX35U Transistor 2TY CBC 184 c transistor
Contextual Info: CNX35U CNX36U PM VO O I I Û U A L IT Y T E C H N O L O G I E S CORP S7E D 7 4 b b 6 5 1 G G G 4 53 4 EfiS • ■ 3T Y — % OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r TTL integrated circuits.

2SC17

Abstract: 2SC1143 04S4 2SC1743 ihse 00456 2sc174
Contextual Info: TOSHIBA {DISCRETE/OPTO} " 3T DE~| T D T 7 E 5 0 DQ[][]453 1 §~~ £097250 TOSHIBA <D I S C R E T E / O P T O m m m m /m m w x -iv z -y c r m 39C 0 0 4 5 3 O UH F—S o ¡ a « * . < y ?- y ? m O UHF~~S O High Speed Switching A pplications B a n d Lo w N o i s e A m p l i f i e r A p p l i c a t i o n s

2SC2116

Abstract: OPTo F02
Contextual Info: TOSHIBA { D I S C R E T E / O P T 0> O V H F — O V H F '"»• U H F 3T DeTJ T O T O S O □□□□3 7 S 7 - L o w N o i s e A n p l i f i e r 'J" M ^1* ID iff . 2.2 mm0 ^ M i . 2 .2 m m 0 n i-P a c k a j j e M A X I M U M R A T I N G S A p p l i c a t i o n

s8205

Abstract: S-8205 TOSHIBA SCR
Contextual Info: 3T TOSHIBA {D ISCR ET E/OPTO} 9097 2 5 0 T O S H I B A DE | SOTTESO DODDSb4 Q D I S C R E T E / O P T O W C ? D^-TTr-K n y ^ - c ? r-K T~* 39C 00564 _0_ _ o i KSSSfl Q j _ Band. O s c ill a to r A p p lic a tio n s . 3.0r - • W* M t -t • Po = 50niW (M in-)

T460

Abstract: t460 transistor C947 ic 4541 c947 transistor transistor 9619 M 9619 JT MARKING 2SB800 2SD1001
Contextual Info: '> ' = ! > h =7 > Ì > ~ X 9 Silicon Transistor 2SD1001 N o -t — T 'i O ^ N x f ^ + - > 7 ; H K '> U h = 7 > i> 'X ^ K 7 -i 2SB 800 o P i mm) t ? >7° ' ) / > 9 >J T " f € ^ T " ë t t 0 Î B * , ifijIÎE, r^jhFE'C"t’o 1.5 ± 0.1 P T = 2 .0 W (0 .7 mm X 16 cm2- t e ^ -y

marking us sot-563

Contextual Info: EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. • Lead−Free Solder Plating

2SC3554

Contextual Info: -> I z i > h =7 > Silicon Transistor 2SC3554 N P N = ' h =ÿ — ft M i Æ i £ ^ ' > \s \d if >; □ V it iÿ j, h Tk-^PK^ -f 7'ffl mm Wl o j» /± T '& & o V cbo^300 ° '[jf-TlIìiS:- rJ Ê I> c l ^ M ì l X l Vd = V, mm) V ceo^300 V ò o 000 V T Y P. C = 2 300 p F ,

TOP 948

Abstract: BDS944 BDS946 BDS948 IEC134 MS80 T 948
Contextual Info: Philips Components BDS944/946/948 Datasheet status Product specification date of issue April 1991 PNP Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

2SD1005

Abstract: b10 lek 2SB804 2SD100
Contextual Info: Silicon T ra n s is to r 2SD1005 f t W-MWÌ $ W i : mm 0 7 |-— t V o 2SB804 i 3 > 7° IJ y > ^ 'J Titm T" l ^ t . o ë ‘x > i f t i Î Œ, iHjhF'E ”(?~'f~0 PT = 2.0 W (0.7 mmX 16 cm2- t e 7 Ì VCEo > 80 V, hFE = 200 TYP. (Ic = 100 mA) »& -9 - ^ î _ x pBH Œ