100 AMP DARLINGTON TRANSISTORS Search Results

transistor TT 3043

Abstract: tt 3043 al 336 D67FP5 IC TT 3043 d67fp6 aj204 D67FP D67FP7 638ak
Contextual Info: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS D67FP5,6,7 500-700 VOLTS 100 AMP, 312.5 WATTS The D67FP is a high voltage NPN high current power darlington especially designed for use in PWM applications where fast and efficient switching is required. This device

FXT704

Abstract: ZTX704 100v 1a darlington transistor DSA003757
Contextual Info: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT704 ISSUE 1 – FEB 94 FEATURES * 100 Volt VCEO * Gain of 3K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 darlington transistors REFER TO ZTX704 FOR GRAPHS

TIP120

Abstract: TIP121 TIP122 TIP125 TIP126 TIP127 TIP127 circuit
Contextual Info: TIP125,126, TIP127 PNP POWER DARLINGTON TRANSISTORS -60 - -100 VOLTS -5 AMP, 65 WATTS COMPLEMENTARY TO THE TIP120, TIP121, TIP122 High power switching applications, designed for hammer drive, pulse motor drive and inductive load drive applications. Features:

TIP127 equivalent

Abstract: TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 TIP120 equivalent
Contextual Info: TIP120,121, TIP122 NPN POWER DARLINGTON TRANSISTORS 60-100 VOLTS 5 AMP, 65 WATTS COMPLEMENTARY TO THE TIP125, TIP126, TIP127 High power switching applications, designed for hammer drive, pulse motor drive and inductive load drive applications. Features: • High collector power dissipation:

T0220IS

Abstract: LC-485 D55A7D D55A D54A7D
Contextual Info: D54A7D NPN POWER DARLINGTON TRANSISTORS 100 VOLTS 7 AMP, 30 WATTS Designed for high power switching applications, hammer drive, pulse motor drive applications. Features: • High D C Current Gain: hFE = 2000 Min. (at V q e = 3V, lc =3A) CASE STYLE TO-220IS

D55A7

Abstract: D55A D54A7D
Contextual Info: D55A7p PNP POWER DARLINGTON TRANSISTORS -100 VOLTS -7 AMP, 30 WA1 rrs Designed for high power switching applications, hammer drive, pulse motor drive applications. Features: • High DC Current Gain: hF E = 2000 Min. (at V c E = -3V, lc = ~3A) CASE STYLE TO-220IS

2Sa1045

Abstract: 2SC2435 2sa104
Contextual Info: 37C • 37^7L2 G001ÖL3 a FUJITSU 2SC2435 M ICROELECTRONICS 2SA1045 SILICON RING EMITTER 7 - 93- 33 DARLINGTON TRANSISTORS 10 AMP, 100 VOLT •10 absolute m a x im m ra tin g s Rating Symbol 2SC2435/2SA1045 Unit Collector to Base Voltage Emitter to Base Voltage

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo

ECG280

Abstract: ECG284 ECG287 darlington pair transistor Darlington npn 2 amp ECG288 ECG TO-220 ECG263 ECG266 ECG285
Contextual Info: P H I L I P S E C G INC S4E D Transistors cont'd ECG Type Description and Application • t.bS3T5fi 0 0 0 7 1 5 3 Dit. H E C G (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts

DIODE T28

Abstract: to127 ECG233 ECG238 ECG247 ECG229 darlington 40 A ECG253 ECG236 ECG244
Contextual Info: P H IL IP S E C Q INC SHE D Transistors cont'd ECG Type ECG229 ECG232 Description and Application • hbSBREfl 0D07152 16T H E C G (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp

ECG288

Abstract: ECG280 ECG287 ECG286 ECG285 ECG262 ECG263 ECG284 ECG261 ECG260
Contextual Info: Transistors cont'd Description and Application E C G Type ECG260 if! λ i (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base V olts BVcbo Collector To Emitter Volts b v C eo Base to Emitter Volts B V EBO Max. Collector Current I q A m ps

ECG245

Abstract: DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG229 darlington 40 A ECG238 ECG234 ECG191
Contextual Info: Transistors cont d ECG Type ECG229 ECG232 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base. Volts Description and Application bv NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter

ECG229

Abstract: ECG247 DIODE T28 ECG234 ECG251 ECG191 ECG2541 transistor ecg246 ECG232 ECG233
Contextual Info: Transistors cont'd Collector To Base. Volts b v Cbo Description and Application ECG Type ECG229 ECG232 (Maximum Ratings at T c = 25°C Unless Otherwise Noted) NPN-Si, VHF Ose, Mix, IF Am p 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter

diode T132

Abstract: resistor 22k ECG2355 resistor 10k ECG2352 ECG2343 ECG2344 ECG2347 resistor 4.7k ECG2365
Contextual Info: Transistors cont'd ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts BV c b o Description and Application Collector To Emitter Volts BV c e O Max. Collector Current lc Amps Base to Emitter Volts b v EBO Max. Device Diss. PD

NTE2360

Contextual Info: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10

diode zener 218

Abstract: diode t48 ECG2322 ECG2322 14 PIN DIP t48 zener ECG2328 218 zener diode 2 Amp zener diode t48 diode T48 regulator
Contextual Info: Transistors cont'd ECG Type Description and Application (Maximum Ratings at T c = 2 5 °C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts b v CBO BV c e O bv ebo Max. Collector Current lc Amps Max. Device

2SC2411KR

Abstract: MMST8598 2SD1781KQ 2SA1036KR MMST5086 MMST5088 2sa1037aks ROHM marking AQ 2SD1781KR MMST4124
Contextual Info: SC-59 BIPOLAR TRANSISTORS NPN TRANSISTORS The latest comprehensive data to fully support these parts is readily available. • • • • • • New Product Type Function 2SC2411KP amplifier 2SC2411KQ amplifier 2SC2411KR amplifier 2SC2412KQ general purpose

MJ10004

Abstract: MJ-10004 OB 2268 darlington power transistor 10a
Contextual Info: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line

TF 450

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218

mj10021

Abstract: ob 2268 60 amp npn darlington power transistors MJ1002
Contextual Info: MJ10021 Darlington Power Transistor NPN silicon power darlington transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications.

resistor 22k

Abstract: mp sot 23 resistor 10k RF Transistors sot-23 ECG2406 resistor 47k resistor 2.2k ECG2426 ECG2401 ECG2402
Contextual Info: PHILIPS E C G INC SME D Transistors cont'd ECG Type Description and Application • bbS3T2fl OOD Vlbl ITS H E C 6 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV c b O b v Ceo

ecg36

Abstract: ecg52 ECG37 60 amp npn darlington power transistors transistor ecg36 dual matched PNP ECG157 ECG46 ECG47 ECG37MCP
Contextual Info: Transistors cont d Collector To Base Volts Description and Application ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) bv ECG36 NPN-Si, Pwr Amp, Hi Speed ECG38MP* Switch (Compl to ECG37) Collector To Emitter Volts Base to Emitter Volts bvceo

power switching 10 amp 60V

Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
Contextual Info: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).

SK3180

Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201
Contextual Info: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current