100B DIODE Search Results

capacitor 30 pf

Abstract: capacitor variable capacitor zener 1206 5.1 v capacitor 180 nF capacitor variable GRM42-6C0G102J50 resistor 1k 142-0701-801 variable capacitors
Contextual Info: DB-54003L-880 BOM Component ID Description Value Case size Manufacturer C1, C9 Capacitor 30 pF 100B ATC Part Code 3R0 C2, C8 Variable Capacitor 0.8 -:- 8 pF Johnson 27293 4R3 C3 Capacitor 4.3 pF 100B ATC C4, C5 Capacitor 18 pF 100B ATC 180 C6 Capacitor 9.1 pF

variable capacitor

Abstract: capacitor 30 pf variable capacitors capacitor variable 142-0701-801 VARIABLE capacitor DATA SHEET capacitor 27293 GRM42-6C0G121J50 EXCELDRC35C
Contextual Info: DB-55008L-880 BOM Component ID Description Value Case size Manufacturer C1, C9 Capacitor 30 pF 100B ATC Part Code 3R0 C2, C8 Variable Capacitor 0.8 -:- 8 pF Johnson 27293 4R3 C3 Capacitor 4.3 pF 100B ATC C4, C5 Capacitor 18 pF 100B ATC 180 C6 Capacitor 9.1 pF

PSMN015-100B

Abstract: PSMN015-100P
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA

PSMN015-100P,127

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA

PULSED LASER DIODE DRIVER

Abstract: DLD-100B Directed Energy laser diode driver 200 mhz 6E7S
Contextual Info: • Output Current <5A To 40A • Repetition Frequency To 1 MHz • Variable Pulse Width From 12ns to 1µs • Economical OEM Module DLD-100B PULSED LASER DIODE DRIVER The DLD-100B is a high speed, high current pulsed laser diode driver designed to operate at 5A to 40A

buk638-500b

Contextual Info: Pow er Devices Power M O SFET Transistors Logic Level FET's in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) RDs ON max (fl) 100 100 100 100 100 100 100 100 100 100 100 100 100 BUK541-100A BUK552-100B BUK542-100B

buk453

Abstract: BUK453-100B TE2024 NDS 40-30 BUK453-100A T0220AB M89 transistor
Contextual Info: BUK453-100A BUK453-100B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Ha 100b

Abstract: BUK452-100A BUK452-100B T0220AB buk452
Contextual Info: Philips Components BUK452-100A BUK452-100B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

7610

Abstract: 7610-100B
Contextual Info: BUK75/7610-100B TrenchMOS standard level FET Rev. 02 — 19 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

BUK455

Abstract: BUK455-100A BUK455-100B T0220AB
Contextual Info: Philips Components BUK455-100A BUK455-100B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

HA 100B

Abstract: BUK436-100A BUK436-100B BUK436
Contextual Info: BUK436-100A BUK436-100B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope, me device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK9529-100B

Abstract: BUK9629-100B
Contextual Info: BUK95/9629-100B TrenchMOS logic level FET Rev. 01 — 18 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK555-100B

Abstract: BUK555-100A BUK555 BUK555 100a T0220AB
Contextual Info: Philips Components BUK555&#39;100A BUK555-100B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effed power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

PSMN015-100B

Abstract: PSMN015-100P SOT404
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN015-100B, PSMN015-100P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V

PSMN015-100B

Abstract: PSMN015-100P transistor 100p
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN015-100B, PSMN015-100P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V

Contextual Info: TO -22 AB BUK7526-100B N-channel TrenchMOS standard level FET 30 January 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK7526-100B

Abstract: BUK7626-100B
Contextual Info: BUK75/7626-100B TrenchMOS standard level FET Rev. 01 — 11 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

03ng60

Contextual Info: BUK95/9610-100B TrenchMOS logic level FET Rev. 02 — 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

TOPFET high side switch

Contextual Info: BUK7Y53-100B N-channel TrenchMOS standard level FET Rev. 3 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

Contextual Info: BUK7Y53-100B N-channel TrenchMOS standard level FET Rev. 3 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

NEC varistor

Abstract: varistor nec NEC DIODES
Contextual Info: NSAD500 SERIES The NSAD500 series is a super low capacitance device for ESD noise protection in 100 to 500 Mbps class data line USB2.0, IEEE1394, 100B, etc. . Based on the IEC 61000-4-2 test on electromagnetic interference (EMI), the NSAD500 series assures an

Contextual Info: BUK75/7610-100B TrenchMOS standard level FET Rev. 01 — 09 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.

BUK9230-100B

Contextual Info: BUK9230-100B TrenchMOS logic level FET Rev. 01 — 22 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

12232

Abstract: BUK7227-100B
Contextual Info: BUK7227-100B TrenchMOS standard level FET Rev. 01 — 26 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.