100B15 Search Results

Contextual Info: Document Number: MRF6S9045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

167D

Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Contextual Info: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100

Contextual Info: Document Number: MRF6S9060 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

100B201JT500XT

Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

ferroxcube for ferrite beads

Abstract: MRF282
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

MRF6S21100H

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110

A113

Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

S1LH

Contextual Info: FREQUENCY CONTROL PRODUCTS LOW POWER MINIATURE SMD VCXO DFV S1-LH/LHZ 3.3 V 14.8±0.3 14.8±0.3 5.08 5.08 1.4 SURFACE MOUNTABLE EPOXY PACKAGE 1.4 9.1±0.2 CRYSTAL PACKED INTO ITS OWN HOLDER 9.1±0.2 RECOMMENDED FOR NEW DESIGNS 1.0 1.0 5.08 5.08 4 3 1 2 2.54

dfv 36

Contextual Info: FREQUENCY CONTROL PRODUCTS HIGH FREQUENCY SMD SINE WAVE VCXO DFV S7-S / MS 19.9±0.1 WIDE PULLING RANGE 7.62 12.9±0.2 SINE WAVE OUTPUT 1.27 SURFACE MOUNT PACKAGE HIGH FREQUENCIES 1.6 H = 9.30 mm Function DFV S7-S/MS V control GND Output Vcc 1 2 3 4 1.2 H±0.15

Contextual Info: FREQUENCY CONTROL PRODUCTS HIGH FREQUENCY SURFACE MOUNT VCXO DFV S1-KECPI 5 V & DFV S1-LECPI (3.3 V) 14.8±0.3 RECOMMENDED FOR NEW DESIGNS 5.08 3.3 V OR 5.0 V SUPPLY VOLTAGE DFV S1-KE/LE Frequency Code yrwk 1.0 +0.1 -0.2 VERY LOW JITTER 5.9 HIGH FREQUENCIES

DFV S1-LE

Abstract: DFVS1 DFV S1-LECPI
Contextual Info: HIGH FREQUENCY SURFACE MOUNT VCXO DFV S1-KECPI 5 V & DFV S1-LECPI (3.3 V) 14.8±0.3 KEY FEATURES 5.08 Encapsulated crystal 1 ps RMS jitter over 50 kHz to 80 MHz B.W. DFV S1-KE/LE Frequency Code yrwk +0.1 -0.2 1.0 5.9 APPLICATIONS Sonet/SDH, Datacomms 5.08

Contextual Info: FREQUENCY CONTROL PRODUCTS HIGH FREQUENCY SURFACE MOUNT VCXO DFV S7-ML 3.3 V & DFV S7-MEC/MO (5 V) DFV S7-M DFV S7-ML KEY FEATURES 19.9±0.1 19.9±0.1 1.6 18.4 1.2 1.2 H±0.15 DFV S7-MEC/MO 1 2 3 5 4 6 3 1 2 7.6 4 19.0 2.6 TYPE 4 3 1 2 1.3 PC board footprint

Contextual Info: FREQUENCY CONTROL PRODUCTS HIGH FREQUENCY SURFACE MOUNT VCXO DFV S1-KEC 5 V & DFV S1-LEC (3.3 V) 14.8±0.3 KEY FEATURES 5.08 Encapsulated crystal Marking: 1.4 9.1±0.2 16 to 180 MHz DFV S1-KE/LE Frequency Code yrwk 1.0 +0.1 -0.2 1 ps RMS jitter over 50 kHz to 80 MHz B.W.

14-KH

Contextual Info: FREQUENCY CONTROL PRODUCTS LOW POWER TIGHT SPECIFICATION DIL 14 VCXO DFV 14-KH & DFV 14-MH 20.3±0.1 CRYSTAL PACKED INTO ITS OWN HOLDER WIDE PULLING OPTION 7.62 12.7±0.1 HIGH FREQUENCY STABILITY 1 7 8 14 0.75±0.1 DFV 14-KH/MH H = 7.0 mm DFV 14-KH type

KME63VB471M12x25LL

Abstract: transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 MRF5S9150HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

UHF TRANSISTOR

Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
Contextual Info: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V

GX03005522

Abstract: 200S CDR33BX104AKWS MRF282SR1 MRF282ZR1 GX0300-55-22 MRF282
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs

Contextual Info: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE

ferroxcube ferrite beads

Abstract: C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

14-KEC

Contextual Info: FREQUENCY CONTROL PRODUCTS HIGH FREQUENCY DIL 14 VCXO DFV 14-KEC & DFV 14-KO FAST ECL 10KH OR CLIPPED SQUARE WAVE OUTPUT STANDARD DIL 14 PACKAGE 20.3±0.1 15.24 PIN 1 V control GND Output Vcc 0.75±0.1 DFV 14-KEC/O 1 7 8 14 H = 8.50 mm 6.3 Pin H±0.1 HIGH FREQUENCIES

imd 5210

Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

100B270JCA500X

Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

sm 4500

Contextual Info: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access

uhf 150w mosfet

Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
Contextual Info: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V