COAXICOM Search Results

Contextual Info: SMA SPECIFICATIONS MATERIAL COAXICOM SMA CONNECTORS are manufactured to have excellent performance up to 18 GHz. The pages that follow include types that are used on coaxial cable flexible , Ultra-Flex and semi-rigid , as launchers into stripline or microstrip, or as receptacles

Contextual Info: 75 Ω SCREW-ON & SNAP-ON SPECIFICATIONS COAXICOM 75 Ω connectors are designed to provide a well-matched system impedance for critical telecommunication and CATV applications. They are available in both a Snap-On configuration with an interface similar to but larger than

UHF TRANSISTOR

Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
Contextual Info: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V

Contextual Info: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE

uhf 150w mosfet

Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
Contextual Info: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

HVV1214-140

Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
Contextual Info: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain

mode 5 IFF

Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
Contextual Info: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

ERJ8GEYJ100V

Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
Contextual Info: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V

transistor SMD 12W MOSFET

Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Contextual Info: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the

Contextual Info: >LL'&''# &&#;A EVALUATION KIT )&&
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'&)&#'&/&C>p RF Power Transistor Part Number: HVV1011-300 Evaluation Kit Part Number: HVV1011-300-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com

5230-7-C

Contextual Info: INTER SERIES ADAPTERS INTRODUCTION & 2.4 MM, 2.9 MM INTER SERIES Inter series coaxial adapters are some of the more common components used in RF, microwave and wireless applications. OEM’s and manufacturing and engineering test facilities are continually required to provide temporary or

GROUND BASED RADAR

Abstract: transistor SMD R1D
Contextual Info: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications

capacitor 10uF/63V

Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
Contextual Info: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

j152

Abstract: RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz HVV1214-100 5919CC-TB-7
Contextual Info: The innovative Semiconductor Company! HVV1214-100 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty Cycle For Ground Based Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V

9044-9513-001

Abstract: SF2950
Contextual Info: SMA Field Replaceable Cross Reference S M A Field R e p la c e a b le J a c k C r o s s R e fe re n ce P in F la n g e .012 .500 sq 4 hole .375 sq 4 hole .223x 625 2 hole .015 .500 sq 4 hole .375 sq 4 hole 223X.625 2 hole .018 .500 sq 4 hole .375 sq 4 hole

J152-ND

Contextual Info: EVALUATION KIT >LL'&''#,&&#;A RF Power Transistor Part Number: HVV1011-600 Evaluation Kit Part Number: HVV1011-600-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com Contents: - PCB Component Placement Diagram

Contextual Info: EVALUATION KIT >LL' '*#'*&#;A RF Power Transistor Part Number: HVV1214-140 Evaluation Kit Part Number: HVV1214-140-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com Contents: - PCB Component Placement Diagram

7900F

Abstract: plug 3.5mm jack female 3080-9 Coaxicom plug 3.5mm female SMA Reverse 50 ohm termination 5230-7-C coaxicom coaxicom catalog 3993A tnc bulkhead jack
Contextual Info: COMPONENTS ATTENUATORS, PHASE ADJUSTERS, DC BLOCKS, DUST CAPS, SHORTS INTER SERIES ADAPTERS INTRODUCTION & 2.4 MM, 2.9 MM INTER SERIES NOTE: ATTENUATORS AVAILABLE IN ADDITIONAL VALUES THAN THOSE SHOWN. CALL FOR AVAILABILITY. DC-18 GHz TYPE N ATTENUATORS VSWR 1.35:1 MAX.

AIRBORNE DME

Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
Contextual Info: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with