100B20 Search Results

Contextual Info: 100B20F Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage2.0k t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)2.0m @I(R) (A) (Test Condition)4.0m V(FM) Max.(V) Forward Voltage6.0

TH 2190 HOT Transistor

Contextual Info: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: 10/100BASE-TX DUAL-PORT TRANSFORMER MODULES Military/Aerospace Grade Compliant with IEEE 802.3u and ANSI X3.263 standards 350 H OCL with 8mA bias Operating and storage temperature: 100B-2002F: -40°C to +85°C 100B-2002FX: -55°C to +125°C Encapsulated package withstands

Contextual Info: 10/100BASE-TX DUAL-PORT TRANSFORMER MODULES Military / Aerospace Grade Compliant with IEEE 802.3u and ANSI X3.263 standards 350µH OCL with 8mA bias Operating and storage temperature: 100B-2002: -40°C to +85°C 100B-2002X: -55°C to +125°C IC grade transfer-molded package withstands

Contextual Info: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS

Contextual Info: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

100B201JT500XT

Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

Contextual Info: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

j340 motorola make

Contextual Info: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

ferroxcube for ferrite beads

Abstract: MRF282
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

arion

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 12/2004 RF Power Field Effect Transistors MRF21090R3 MRF21090SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: FREQUENCY CONTROL PRODUCTS HIGH FREQUENCY SURFACE MOUNT VCXO DFV S8-MLECPI 3.3 V 19.8±0.3 KEY FEATURES 15.24 12.8±0.2 622 to 800 MHz Parametric frequency multiplication 1.27 1.65 0.4 ps RMS jitter over 50 kHz to 80 MHz B.W. 2.54 18.4 OC-192/Sonet/SDH H = 9.30 mm

672047

Abstract: b40 B2 RECTIFIER 400V EP102UCRC06 MCCB NON AUTO EP102UCC63 EP62 D06 EP102UCC06 GE circuit breaker epc 62 c02 EP101UCC63 EP102UCB16
Contextual Info: GE Energy Industrial Solutions 51210 GE Energy Industrial Solutions GE Industrial Solutions Industrial Solutions formerly Power Protection a division of GE Energy, is a first class European supplier of low-voltage products including wiring devices, residential and

LM7805ACH-ND

Abstract: TL174 tl173 PTVA035002EV V1
Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features

GX03005522

Abstract: 200S CDR33BX104AKWS MRF282SR1 MRF282ZR1 GX0300-55-22 MRF282
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs

ATC 100C

Abstract: CDR33BX104AKWS MRF284R1 MRF284SR1 C10 PH mallory 150 series
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

ferroxcube ferrite beads

Abstract: C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

MRF284

Abstract: wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from

spw 049 transformer

Abstract: spw -049 transformer spw 068
Contextual Info: WHEN PERFORMANCE MATTERS DC Power Supplies The First Name in Power Solutions The People at Acme Make it Happen When you need big power in a small space – turn to the first name in power solutions. Acme Electric did not become a leader in power quality by accident. Acme earned its reputation

TH 2190 HOT Transistor

Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21
Contextual Info: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and

imd 5210

Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

j340 motorola

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier