100X100X2M Search Results

BBC OS 0,9 4A

Abstract: 07380 bbc os 0.9 4A
Contextual Info: lb T O S H I B A -CDISC R E T E / O P T O } 909725 0 TO SHI BA T D i 7E S O Q Ü Q 1371 fc, | bbC <DISCRETE/OPTO 0 7 379 2SB993 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.

ic 301

Abstract: 2SD1535
Contextual Info: Power Transistors 2SD1535 b132fl52 001b7Sa MbO 2S D 1535 Package D im ensions Unit ; mm Silicon NPN Triple Diffused Planar Darlington Type High Power A m plifier • Features • • • • Very good linearity o f DC current gain Iiff High collector-base voltage (VCbo)

2SB0942

Abstract: 2SB0942A 2SD1267 2SD1267A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc

2sc1846

Abstract: 2SA0885
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SC4212

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4212 Silicon NPN triple diffusion planar type For color TV horizontal deflection driver Unit: mm 8.0+0.5 –0.1 3.2±0.2 M Di ain sc te on na tin nc ue e/ d • Features ■ Absolute Maximum Ratings Ta = 25°C

2SB0946

Abstract: 2SD1271
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SB1299

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SB0944

Abstract: 2SD1269
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching 5.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 150 V Collector-emitter voltage (Base open)

66382

Abstract: CSC4212
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR CSC4212 TO-126 Plastic Package EC B For Colour TV Horizontal Deflection Driver ABSOLUTE MAXIMUM RATINGS Tc=25ºC DESCRIPTION

m6g45

Contextual Info: TO SH IBA SM6G45,SM6J45,SM6G45A,SM6J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G45, SM6J45, SM6G45A, SM6J45A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : Vd r m = 400, 600V R.M.S On-State Current : It RMS —6A

Contextual Info: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm 2.0 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −180

Contextual Info: TO SH IBA SM8G45,SM8J45,SM8G45A,SM8J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G45, SM8J45, SM8G45A, SM8J45A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : V d r m = 400, 600V R.M.S On-State Current : It RMS —8A

KTB688B

Abstract: KTD718
Contextual Info: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25

3050J

Contextual Info: 1-1-1 Linear Regulator IC SI-3000J Series 5-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A • Low dropout voltage: VDIF ≤ 1V (at IO=2.0A)

12v diode 10A

Contextual Info: 1-1-1 Linear Regulator IC SI-3001N Series 3-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 1.5A Symbol SI-3241N 35 45 Unit

SI-3122N

Contextual Info: 1-1-1 Linear Regulator IC SI-3002N Series 3-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A Symbol SI-3122N/3152N 30

Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) Silicon PNP epitaxial planar type For low-voltage switching 16.7±0.3 • Low collector-emitter saturation voltage VCE(sat) • High-speed switching

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit: mm Parameter Collector-base voltage (Emitter open) 16.7±0.3 Symbol Rating Unit VCBO 350

Contextual Info: Power Transistors 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1071A 5.5±0.2 4.2±0.2 2.7±0.2 14.0±0.5 • Absolute Maximum Ratings TC = 25°C φ 3.1±0.1 Rating Unit Collector-base voltage Emitter open VCBO

Contextual Info: Power Transistors 2SB1254 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1894 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 60 W HiFi output • High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0951 (2SB951), 2SB0951A (2SB951A) Silicon PNP epitaxial planar type darlington Unit: mm Collector-base voltage (Emitter open) Symbol Rating Unit VCBO −60 V 2SB0951 Collector-emitter voltage 2SB0951