1024X8 Search Results

63S081

Contextual Info: £1 Advanced Micro Devices 53/63S881/A High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable iltanlum-tungsten fuses TIW guaran­ tee greater than 98% programming yields

Contextual Info: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)

27S181

Abstract: Am27S181/27S181
Contextual Info: A m a 2 7 S 1 8 1 /2 7 S 1 8 1 A A m 2 7 S 2 8 1 Advanced Micro Devices /2 7 S 2 8 1 A 8,192-Bit 1024x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction

Am2140s

Abstract: VC1039
Contextual Info: Am2130/Am2140 1024x8 Dual-Port Static Random-Access Memories DISTINCTIVE CHARACTERISTICS True dual port operation Access time as fast as 55 ns Master device Am2130 has on-chip arbitration Expandable data bus width in multiples of 8 bits using one master (Am2130) and required number of slave

63S881

Abstract: 53S881 53S881A 63S881A 1024x8 PROM
Contextual Info: High Performance 1 0 2 4 x 8 PROM TiW PROM Family 5 3 /6 3 S 8 8 1 5 3 /6 3 S 8 8 1 A Features/Benefits Description • 30-ns maximum access time The 53/63S881 and 53/63S881A are 1024x8 bipolar PROMs featuring low inpu t current PNP inputs, full S chottky clam ping,

AM27S35

Abstract: AM27S35A CD3024 PD3024 1024x8 PROM
Contextual Info: Am27S35/S35A/Am27S37/S37A _ „ Advanced Micro Devices 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS • • Slim, 24-pin, 300-mil lateral center package occupies approximately 1/3 the board space required by standard

eeprom 25080

Abstract: 25080 948AL CAT25080 CAT25160 Q100 25080 eeprom 1024x8
Contextual Info: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface

25c08v

Abstract: 25C16LI CAT25160 25C16VI 25C08 25C16 AEC-Q100 CAT25C08 CAT25C16 25C08L
Contextual Info: Not Recommended for New Design, Replace with CAT25080/CAT25160 CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits.

25c08v

Abstract: 25C16VI 25C16V cat25c08 25Y08 24C168
Contextual Info: CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C08/

Contextual Info: HOLTEK r r HT24L C08/16 8K/16K 2-Wire CMOS Serial EEPROM Features • • • • • • • • • • • • • • O perating voltage: 2.4V~5.5V Low power consumption - O peration: 5mA m ax. - Standby: 5|iA m ax. In tern al organization - 8 K H T24LC08 : 1024x8

5218 chip ic

Abstract: 53S881F
Contextual Info: ADV M IC R O 14‘ E D I MEMORY 0257555 0027871 a 2 5 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS T APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable tltanlum-tungsten fuses TiW guaran­

27S181

Contextual Info: Am27Sl80/27S181/PS181 Am27S280/27S281/PS281 8,192-Bit 1024x8 Bipolar PROM > 3 DISTINCTIVE CHARACTERISTICS • • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction

Contextual Info: High Performance 10 24x8 PROM TiW PROM Family 5 3 /6 3 S 8 8 1 5 3 /6 3 S 8 8 1 A Featu res/B en efits Description • 30-ns m aximum access time T h e 53/63S881 a nd 5 3/63S 881A are 1024x8 b ip o la r P R O M s fe a tu rin g lo w in p u t c u rre n t PNP in p u ts , fu ll S c h o ttk y c la m p in g ,

AM27S181

Abstract: 27s181 27s181a AM27S181/BJA AM27S181A CERAMIC LEADLESS CHIP CARRIER LCC 24 AM27S181PC
Contextual Info: Am27S181/27S181A Am27S281/27S281A 8,192-Bit 1024x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • Fast access time allows high system speed • 50% power savings on deselected parts — enhances reliability through total system heat reduction • Platinum-Silicide fuses guarantee high reliability, fast

82S181/BJA

Abstract: 82S181 1024x8 PROM
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 8K-bit TTL bipolar PROM 1024x8 82S181 FEATURES DESCRIPTION • Address access time: 90ns max • Input loading: -150µA max • On-chip address decoding • Four chip enable inputs

1024x8 PROM

Contextual Info: c, MmoHMb m Memories High Performance 1024x8 PROM 5 3 /6 3 S 8 8 0 5 3 /6 3 S 8 8 1 5 3 /6 3 S 8 8 1 A / / / / / / / / / ////////////////////////////////////A DVA NCE INFORMATION Features/ Benefits Applications • 8192-blt memory • Microprogram control stores

HB3108A

Abstract: Hughes Microelectronics HS 1106 BS H3108 cs 308
Contextual Info: H3108A 1024x8 CMOS EEPROM MICROELECTRONICS CENTER DESCRIPTION H ughes H3108A is a CM OS E lectrica lly Erasable P rogram m able ROM EEPROM organized 1024 x 8. It is an im proved version o f th e H3108, featuring both low er pow er d is s ip a tio n and latched data and addresses

25160D

Abstract: eeprom 25080 25080 eeprom
Contextual Info: CAV25080, CAV25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAV25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface

64X128

Abstract: 53RS881 53RS881A 63RS881 63RS881A 1024X8
Contextual Info: 53/63RS881/A Advanced Micro Devices High Performance 1024x8 Registered PROM FEATURES/BENEFITS APPLICATIONS • Edge triggered “D" registers • Microprogram control store • Synchronous and asynchronous enables • State sequencers • Versatile 1:16 initialization words

723CL

Abstract: AM27S281PC 27s181 AM27S181 27S181A AM27S181PC AM27S181A 27S281
Contextual Info: Am27S181 /27S181A Am27S281 /27S281A 8,192-Bit 1024x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • Fast access time allows high system speed • 50% power savings on deselected parts — enhances reliability through total system heat reduction • Platinum-Silicide fuses guarantee high reliability, fast

1024X8

Abstract: tws 1000
Contextual Info: d210002 1024X8, Mux 16, Drive 3, Non-Pipelined High-Speed Single-Port Synchronous SRAM Features Memory Description • Precise Optimization for Infineon’s C9DD1 0.20µm The 1024X8 SRAM is a high-performance, synchronous single-port, 1024-word by 8-bit memory designed to

25160D

Abstract: s08d 25080D CAT25080YE-G eeprom 25080 UDFN8 254
Contextual Info: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface

Contextual Info: a 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable titanium-tungsten fuses TIW guaran­ tee greater than 98% programming yields

M2130

Contextual Info: Am2130/Am2140 AdVM“ o 1024x8 Dual-Port Static Random-Access Memories Devices DISTINCTIVE CHARACTERISTICS True dual port operation Access time as fast as 55 ns Master device Am2130 has on-chip arbitration Expandable data bus width in multiples of 8 bits using