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    102N02 Price and Stock

    TDK Epcos B82724J2102N021

    CMC 39MH 1A 2LN TH
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    DigiKey B82724J2102N021 Tray 480
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    TDK Epcos B82722J2102N020

    CMC 15MH 1A 2LN TH
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    DigiKey B82722J2102N020 Tray 540
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    TDK Epcos B82722A2102N020

    CMC 15MH 1A 2LN TH
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    DigiKey B82722A2102N020 Tray 600
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    TDK Epcos B82724A2102N021

    CMC 39MH 1A 2LN TH
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    DigiKey B82724A2102N021 Tray 600
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    TDK Epcos B82725J2102N020

    CMC 68MH 1A 2LN TH
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    DigiKey B82725J2102N020 Tray 320
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    102N02 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    102N02 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF

    102N02 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original
    PDF DE150-102N02A 500Pf

    200W MOSFET POWER AMP

    Abstract: nec 2401 DE150-102N02A 150P rf power mosfet 0/DE150-102N02A
    Text: DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original
    PDF DE150-102N02A 500Pf 200W MOSFET POWER AMP nec 2401 DE150-102N02A 150P rf power mosfet 0/DE150-102N02A

    nec 2401

    Abstract: DE150-102N02A QGS 80W 30 ohm 150P Directed Energy spice
    Text: Directed Energy, Inc. An DE150-102N02A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original
    PDF DE150-102N02A 500Pf nec 2401 DE150-102N02A QGS 80W 30 ohm 150P Directed Energy spice

    102N02

    Abstract: DE-150
    Text: PRELIMINARY SPECIFICATIONS DE-150 102N02 1.4A, 1000V, 11Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original
    PDF DE-150 102N02 150oC 102N02

    high power rf 10kW

    Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02
    Text: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order


    Original
    PDF DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02