10OJI Search Results

Contextual Info: SGS-THOMSON Q g^(ô g[L[l TO(Q)iQ©S M27C256B 256K (32K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA

loo8

Contextual Info: & 27C64 Microchip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption —20mA Active current — 10OjiA Standby current • Factory programming available • Auto-insertion-compatible plastic packages

28C64A

Abstract: A12C HA11
Contextual Info: 28C64A Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation — 30mA Active — 10OjiA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

SGS-Thomson m27c4001

Abstract: CMOS J601 27c4001 M27C4001 M27C4001-12F1
Contextual Info: JAN 2 2 199T SGS-THOMSON M27C4001 4096K 512K x 8 CMOS UV EPROM PRELIMINARY DATA VERY FAST ACCESS TIME : 100ns. COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION : . Operating current 70mA at 10 MHz . Standby current 10OjiA.

557 timer connections

Abstract: 1N914 M28C64C PDIP28 PLCC32 RB810
Contextual Info: / = T S G S - ltiO M S O N [ L ifê T M K M M 2 8 C 6 4 C PARALLEL ACCESS CMOS 64K 8K x 8 EEPROM • FAST ACCESS TIME: 150, 200ns ■ SINGLE SUPPLY VOLTAGE: 5V ± 10% ■ LOW POWER CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA ■ FAST WRITE CYCLE:

54256AP

Abstract: TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap
Contextual Info: TOSHIBA TC54256AP/AF SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY D e s c rip tio n The TC54256AP/AF is a 32,768 word x 8 bit one time programm able read only m em or/ m olded in a 28-pin plastic package. The TC54256AP/AF’s access time is 200ns and it has a low power standby m ode which reduces the power dissipation without

s29f

Contextual Info: TMS29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '

Contextual Info: y UC5603 UNITRODE 9-Line SCSI Active Terminator FEATURES DESCRIPTION • The UC5603 provides 9 lines of active termination for a SCSI Small Comput­ ers Systems Interface parallel bus. The SCSI standard recommends active termination at both ends of the cable segment.

518128

Abstract: 518128apl TC518128
Contextual Info: TOSHIBA TC518128APL/AFL/AFWL-80LV/10LV/12LV TC518128AFTLS0LV/10LV/12LV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 1 2 8 A -L V is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s b y 8 bits. The T C 5 1 8 1 2 8 A -L V

Signetics 27c64

Abstract: 27C64A 27C64A-12 27C64A-15 27C64A-20 27C64AI15 27C64AI20
Contextual Info: Philips Components-Signetics Document No. 853-0081 2 7 C 6 4 A ECN No. 01039 Date of Issue November 12, 1990 64K-bit CMOS EPROM 8K x 8 Status Product Specification Memory Products D ESC R IPT IO N FEA TU RES Philips Components-Signetics 27C64A C M O S E P R O M is a 65,536-bit 5V read

Contextual Info: SIEMENS ICs for Communications RF/IF Double PLL Frequency Synthesizer PM B2347 Version 1.1 Preliminary Specification 27 p a g e s in cl. th is p a g e 05.99 Edition 08.98 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, BalanstraBe 73,

TC1173

Contextual Info: ¡eluom Semiconductor, Inc. TC1173 300mA CMOS LDO WITH SHUTDOWN, ERROR OUTPUT, AND BYPASS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TC1173 is a precision output typically ±0.5% CMOS low dropout regulator. Total supply current is typi­ cally 50jxA at full load (20 to 60 times lower than in bipolar

Contextual Info: DENSE-PAC MI C R O S Y S T E MS 32 Megabit FLASH EEPROM DP5Z1MW32PV3 PRELIMINARY DESCRIPTION: The DP5Z1MW32PV3 "VERSA-STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It

Contextual Info: p P jp i G E C P L E S S E Y ADVANCE DATA SE MI CONDU CTORS DS3694-2.1 MA9564 HIGH TRANSIENT/RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9564 64k Static RAM is configured as 8192 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.Sjim technology. The device has been designed specifically for high

BA604

Contextual Info: VtSHAY _ BA604 ▼ Vishay Telefunken Silicon Planar Diode Applications G eneral purpose 94 9371 Absolute Maximum Ratings Tj = 2 5 °C P aram eter Test C onditions Type S ym bol Value Unit v rsm 80 V vr 50 V Peak reverse voltage, non repetitive

UC2906 UC3906

Contextual Info: y U C2906 U C3906 U N IT R O D E Sealed Lead-Acid Battery Charger FEATURES D E S C R IP T IO N • Optimum Control for Maximum Battery Capacity and Lite • Internal State Logic Provides Three Charge States • Precision Reference Tracks Battery Requirements Over

ucc3857 application circuits

Abstract: UC3854 flyback PFC
Contextual Info: y UNITRODE UCC1857 UCC2857 UCC3857 Isolated Boost PFC Preregulator Controller PRELIMINARY FEATURES DESCRIPTION • PFC With Isolation, Vq < V|n The UCC3857 provides all of the control functions necessary for an Iso­ lated Boost PFC Converter. These converters have the advantage of trans­

Contextual Info: UC1914 UC2914 UC3914 U N IT R O D E 5V to 35V Hot Swap Power Manager FEATURES • 5V to 35V Operation • Precision Maximum Current Control • Precision Fault Threshold Programmable Average Power Limiting Programmable Overcurrent Limit Shutdown Control Charge Pump for Low RDSon

Contextual Info: DENSE-PAC 1 Megabit UVEPROM M ICROSYSTEM S DPV3232VA DESCRIPTION; The DPV3232VA is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.

Contextual Info: >4MCC ADVANCE INFORMATION 12-OUTPUT BiCMOS PLL CLOCK GENERATOR S4LV406 FEATURES GENERAL DESCRIPTION • Generates outputs from 25 MHz to 100 MHz • Four groups of three outputs 12 outputs total • Eight user-selectable output functions for each group • Proprietary output drivers with:

IRFD110

Abstract: irfd113 328h IRFD11Q k 3525 MOSFET S402 FD113 fd110 IRFD110/111/112/113
Contextual Info: HE D | 4055452 QQOaBbfl S | Dgta Sheet N q p D.g 328H INTERNATIONAL R E C T IF IE R T-35-25 IN T E R N A T IO N A L R E C T IF IE R llO R l HEXFET TRANSISTORS IRFD11Q N-CHANNEL IRFD113 HEXDIP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

Contextual Info: MP87L76 CM O S 10 MSPS, 8-Bit High Speed, Low Power Analog-to-Digital Converter with Power Down FEATURES • • 20 Pin PDIP, S OI C and S S O P P a c k a g e s • 24 Pin P a c k a g e Avai l abl e: 8-Bit Resol ut i o n MP87L86 • I m p r o v e d Version o f M P 8 7 L 7 5

Contextual Info: rZ J *7 # . S G S -T H O M S O N [» [M & IIC T G M I] M 28C 64C M 28C 64X PARALLEL ACCESS 64K 8K x 8 EE PROM • FAST ACCESS TIME: 150ns ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION - Active Current 30mA - Standby Current 10O^A ■ FAST WRITE CYCLE

op400

Abstract: powerful OP-400 J135 pir schematic AN-120 D65013 151E-6
Contextual Info: ANALOG DEVICES AN-120 APPLICATION NOTE ► ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 OP-400 SPICE Macro-Model by Joe Buxton INTRODUCTION This application note describes the SPICE macro-model for the OP-400 quad low-offset, low-power operational amplifier. This