10X13MM Search Results

TSOP56

Abstract: 2N 5551 datasheet A0-A21 M58LW032D
Contextual Info: M58LW032D 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ■ ACCESS TIME

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

M29W128FL

Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

JESD97

Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)

28F320J3A

Abstract: 28F640J3A M58LW032C M58LW032D M58LW064C M58LW064D TSOP56 EasyBGA64 memory bandwidth
Contextual Info: TA254 TECHNICAL ARTICLE M58LWxxC and M58LWxxD: ST Introduces a New Family of Flash Memories for High Performance Applications Ruggero De Luca, Roberto Incerto, Marc Guedj, Flash Memory Division, STMicroelectronics, Agrate, Italy To meet designers' needs for Flash memories for

MX25L6455EXCI-10G

Abstract: MX25L6455E MX25L6455EMI-10G mx25l6455 MX25L12855EXCI-10G MX25L12855EMI-10G MX25L128 MX25L6455EXC PM1467 MX25L12855E
Contextual Info: MX25L6455E MX25L12855E MX25L6455E/MX25L12855E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1467 REV. 1.3, JUN. 25, 2010 1 MX25L6455E MX25L12855E Contents FEATURES. 5

DQ141

Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)

Contextual Info: M58LW032A 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations – VDDQ = 1.8V to VDD for I/O Buffers

TSOP56 Package Tape

Contextual Info: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations

M29W640

Abstract: 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT
Contextual Info: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

Contextual Info: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations

TSOP56

Abstract: M58LW064D
Contextual Info: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations

MX25L6455E

Abstract: MX25L6455 MX25L12855 MX25L6455EXCI-10G
Contextual Info: MX25L6455E MX25L12855E MX25L6455E/MX25L12855E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1467 REV. 1.1, JUL. 17, 2009 1 MX25L6455E MX25L12855E Contents FEATURES. 5

sn 5551

Abstract: CR10 J-STD-020B M58LW064C TSOP56
Contextual Info: M58LW064C 64 Mbit 4Mb x 16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ WIDE x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations

25U4035

Abstract: 25U1635E uson+8+land+pattern
Contextual Info: The Ultimate Performance Flash Memory Macronix Serial Multi I/O MXSMIOTM Flash www.macronix.com Contents Why Use MXSMIOTM Family? 3 ● Advantages of Macronix Serial Multi-I/O Flash Family 4 ● Worldwide NOR Flash Trend 5 ● The Fastest Performance Serial Flash on the Market

Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary „ Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Asynchronous Random/Page Read – Page width: 8 Words

Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Features summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

Contextual Info: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ACCESS TIME

2N 5551 datasheet

Abstract: M58LW064D TSOP56
Contextual Info: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ■ ACCESS TIME

M58LW128A

Abstract: M58LW128B TSOP56 A23B
Contextual Info: M58LW128A M58LW128B 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LW128A: x16 – M58LW128B: x16/x32 ■ SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations

Contextual Info: 2F., No.512, Sianjheng 2nd Rd., Chu-Pei City, Hsinchu County, Taiwan 302, ROC TEL: +886-3-5585138 FAX:+886-3-5585139 New Product Release Part No: EM48AM3284LBB This is to notify our valuable customers that EOREX had launched its new version device for 16M*32 Mobile

EM47FM1688MCA

Contextual Info: EM47FM1688MCA/SCA 8Gb 32Mx8Bank×16×2Rank Double DATA RATE 3 SDRAM Features Description • Use Two 256M x 16 dies stack to 256M x 16 x 2R DDP. • VDD/VDDQ = 1.35V -0.065/+0.1V • Backward compatible to VDD/ VDDQ = 1.5V ±0.075V. • All inputs and outputs are compatible with SSTL_15

N6796

Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)

M29W128

Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read