A23B Search Results

A23B

Contextual Info: SIEMENS CMPNTS t OPTO MME D • A23b 35 b ODGSGDb 1 B S IE X IL101B SIEMENS HIGH SPEED THREE STATE OPTOCOUPLER -M I-3 } Package Dimensions in Inches mm no G K» AN O D E { 5 - y 3 Vcc f- 3 G A TE (6 10) C ATHODE E i960) ncQ - y tg] t¿i tjr W3 * 3

Contextual Info: SIEMENS CMPNTSt OPTO 44E D B A23b32b OOOMbT? 2 B S IEX RM-85D Mask-Diffused GaAsP s|«t Monolithic LED W S IE M E N S FW- ? PART NO. 2680-0030 - P-metal anode Diffusion Barrier . Epitaxial Layer . Substrate . N-m etal (cathode)

Contextual Info: SIEMENS CMPNTS-, OPTO SIEM EN S M4E D • a23b32b 0004141 =] H S I E X LS3369-EO/-FO YELLOW LY3369-EO/-FO GREEN LG3369-EO/-FO HIGH EFFICIENCY RED LOW CURRENT T1 LED LAMP Package Dimensions in Inches mm Surface rei fai 028(0.7) .10 .016(0 4) (2 5 4 ) _

Contextual Info: SIEMENS CMPNTSn OPTO M4E • D □ □ □ M c173 □ H S I E X A23b32b 4N35/4N36/4N37 SIE M E N S PHOTOTRANSISTOR OPTOCOUPLER Package Dimensions in Inches mm *-.3 6 0 0 1 4 t '* o 'BASE A.SQK .COLLECTOR CÄTH0K » 1 ¿63 . EP/lTTER Í.G L E D C H 'P O N PIN 2

A23B

Contextual Info: A23b DB LECTRO Inc. DIN 41612 IDC TYPE TRIPLE ROW A+C PITCH: 2.54mm S P E C IFIC A TIO N S Material « ¿ S i*. In s u la t o r : PRT, g l a s s re ln fd n & d , rated U L SMV-Q C o n t a c t : P h o s p h o r Bronze E le c t r ic a l V C u rre n t R a tin g ; 1 A m p D C

12 f 5091

Abstract: diode in 5392 LDR log led diode 3d
Contextual Info: SIEMENS CMPNTS-, OPTO 44E D • SIEMENS A23b35b 0DQM'13eJ □ M S I E X RED HIGH EFFICIENCY RED y e llo w LDR 5091/5092/5093 LDH 5191/5192/5193 LDY 5391/5392/5393 GREEN LDG 5591/5592 T1 % LED LAMP FEATURES • • • • • • High Light Output Lightly Tinted Clear Lens

Contextual Info: I S I E M EN S CMP NTSi OPTO 44E D m a23b32b GDDMbTS =1 B S I E X RM-73A Mask-Diffused GaAsP Monolithic LED S IE M E N S PART NO. 2680-0003 T-W- 97 P-melal anode Diffusion Barrier Epitaxial Layer Substrate N-m etal (cathode) DESCRIPTION TYPICAL DEVICE PARAMETERS

TF 431 M

Abstract: sfh siemens
Contextual Info: SIEMENS CMPNTSi OPTO 44E D • A23b32b Q0DS15A 1 M S IE X S IE M E N S SFH 431 SERIES INFRARED EMITTER T-4M 1 FEATURES Absolute Maximum Rptffig • • • • Parameter Power Dissipation D C Forward Curran Surge Current Reverse VoitagsP*-! Storage Operatjg

Contextual Info: 32E V m A23b320 PNP Silicon High-Voltage Transistor Q O lb ö S S 3 « S IP BFN 21 SIEMENS/ SPCLi SEMICONDS T- 21-0,3 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage

Contextual Info: 35E D • A23b320 0Q172Ô4 2 « S I P PNP Silicon Darlington transistors SMBTA 63 SIEMENS/ SPCL, SEMICONDS SM BTA64 High collector current High DC current gain Type Marking Ordering code or versions in bulk Ordering code for versions on 8 mm-tape Package

610-3 opto

Contextual Info: SIEMENS C M P N T S i OPTO 44E D • A23b32b 0005043 4 M S I E X S IE M E N S ILD 610 SERIES DUAL PHOTOTRANSISTOR OPTOCOUPLER - p m - <33 Package Dim ensions In Inches mm 380 19 65) PIN CONFIGURATION; Si ft PIN ffl fUNCTION 1 2 3 4 S 6 7 8 ANODE 1 CATHODE 1

SIEMENS SMT-TOPLED

Contextual Info: SIEMENS C M P N T S i OPTO SIEMENS A23b32b GÜQ5453 1 44E D SIEX LS T670-H0 YELLOW LY T670-H0 GREEN LG T670-H0 ORANGE LO T67Q-HO HIGH EFFICIENCY RED SMT-TOPLED , Surface Mount LED Lamp Package Dimensions in Inches mm *.1 19 < 3Q )_ .1 02(26) .083(2.1)

optocoupler H11A1

Abstract: h11a1 H11A5
Contextual Info: SIEMENS CMPNTS-, OPTO MME D • A23b32b QQOM'iöS 7 B ISIEX SIE M E N S H11A1 thru H11A5 PHOTOTRANSISTOR OPTOCOUPLER Package Dim ensions in Inches mm r 8AS£ AKQ0C m CATMODE sCOLLEGTOfl W ¥ ¥ EM iftEfl ¥ 0» !| FEATURES Maximum Ratings • 7500 Volt Withstand Test Voltage

siemens 250 87

Contextual Info: 32E D • A23b32G 001724^ □ « S I P PIMP Silicon Transistors SIEMENS/ SPCL-, SEMICONDS _ • For A F input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Low noise between 30 Hz and 15 kHz

Contextual Info: 3EE D Bi A23b3S0 DGl?GbS 1 H S I P PNP Silicon RF Transistor BFT 92 SIEMENS/ SPCLi SEMICONDS _ • For broadband amplifiers up to 2 G Hz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions!

marking a13

Abstract: A2323 1a2b2 marking KEY
Contextual Info: STANDARD KEY POS. [W/O KEY P/N:RMC-EB32RF -BSLA2 PART NO. RMC-EB32RFÌ RMC-EB32RFÌ RMC-EB32RFÌ RMC-EB32RF( )-B5L42-A23B23 Ì -B5LA2-A13B13 )-B5LAZ-A12B12 )-B5LA2-A13B12 ] KEY PQS. MARKING KEY PQS, MARKING MATING CONNECTOR [TYPE A) (TYPE A) (TYPE 0} (TYPE B)

A13B

Abstract: a12b A12-B FHPT-0007A
Contextual Info: PART NO. RM C-EB15FB-BSLA6N-M A RM C-EB15FB—BSLA6N—MA12 RM C-EB15FB—BSLA6N—MA13 RM C-EB15FB—BSLA6N—MA23 POLARIZATION KEY POS. NOTHING r ”- - - - - - V 12 r 13 23 MARKING AB A12B A13B A23B MATING CONNECTOR RMC—EA15MY—DM -M A( ) AND RMC—EA15MY—DM( )-M A3 AND

8C023

Abstract: FEB21 c023 RMC connectors
Contextual Info: STANDARD KEY PART PDS. [ W/D NO, RMC-EE32F RMC-EB32F( RMC-EB32F( RMC-EB32F( - B S L A 10 -A23B23 ) - B S L A 1□-AI3BI3 ) -BSLA10-A12B12 ) - B S L A 10 -A13B12 RMC-EB32FC ) - B S L A 10 - A 1 3 Ï 3 KEY P / N: R M C - E B 3 2 E C )-BSLA10-( )] KEY PDS, HARKING KEY PDS, MARKING

siemens phototransistor

Abstract: siemens k50
Contextual Info: SIEMENS CMPNTSi OPTO " MME Ô23b32b 0005234 O BiS IEX ]> LPT100/100A/100B LPT110/110A/110B S IE M E N S PHOTOTRANSISTOR T—41—67 Package Dimensions in Inches LPT100/A/B LPT110/AyB .200 OIA LENS—s. t 1r ^ .105 TYP k ±.035 t U ÏÏ1 019 d i a . - / ±.003

D201O

Contextual Info: I E M E N S C M P N T S n O 4 P T O S IE M E N S 4 E D Ö E 3 b 3 2 L D G Q 4 Ô 0 3 fl S I E X MPD 2545 g r e e n MPD 2547 YELLOW MPD 2548 HIGH EFFICIENCY RED .25" 4-Character, 5x 7 Dot Matrix, X-Y Stackable, HI-REL/Military Alphanumeric Programmable Display"

Q68000-A4334

Contextual Info: UT 32E D • fi23b3S0 QQlVSl'l 5 « S I P NPN Silicon Switching Transistors SIEMENS/ SP C L i SEMICONDS _ SMBT 2222 SMBT 2222 A r - 3 5 " -;f • • • High D C current gain 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: S M B T 2907, S M B T 2907 A PNP

BCX70J

Contextual Info: BEE D • ÔS3h3B0 0Q3.bb?ä ? ISIP. NPN Silicon AF Transistors SIEMENS/ SPCLi SEMICONDS BCW 60 BCX 70 T-3^-17 • • • • • For AF input stages and driver applications High current gain Low coilector-em itter saturation voltage Low noise between 30 Hz and 15 kHz

Contextual Info: 35E D • ê23b32Q QQlbSTQ S « S I P Silicon Tuning Diode B B 512 SIEMENS/ SPCL-, SEMICONDS _ t 07-19 • For AM tuning applications • Specified tuning range 1.8 V Type Marking Ordering code taped Package BB 512 white/M Q62702-A479 SOD-123 Maximum Ratings

Contextual Info: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance