1117 S TRANSISTOR Search Results

st c 1117 ld 25 regulator

Abstract: 1117s33 1117V33 1117V33C 1117-D33 1117DT33 1117-s33 1117S33C ld1117 y 1117-D50
Contextual Info: L D 1117 SERIES S G S -T H O M S O N LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS P R E L IM IN A R Y DATA • LOW DROPOUT VOLTAGE 1VTYP . 2.85V DEVICE PERFORMANCES ARE SUITABLE FOR SCSI-2 ACTIVE TERMINATION ■ OUTPUT CURRENT UP TO 800mA . FIXED OUTPUT VOLTAGE OF: 2.5V, 2.85V,

gs 1117 ax

Abstract: 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117
Contextual Info: I f\ A dvanced L in e a r D e v ic e s , In c . J ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY APPLICATIONS GENERAL DESCRIPTION The ALD 1107/ALD 1117 are m onolithic quad/dual P-channel enhance­ m entm ode matched M O SFET transistor arrays intended fo r a broad range

capacitor 1nj 400

Abstract: X8862L
Contextual Info: 19-1117: Rev 0 :8 /9 6 L o w - C o s t , L o w - Dr o p o u t , Du a l L i n e a r R e g u l a t o r The MAX8862 output voltage is preset to 4.95V L , 3.175V (T), or 2.85V (R). This device employs Dual Mode operation, allowing user-adjustable outputs from + 2V to +11V with external resistors. The input

Contextual Info: T O SH IB A GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR THE 4TH GENERATION SILICON N CHANNEL MOS TYPE GT30J322 Unit in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • • FRD Included Between Emitter and Collector Enhancement-Mode High Speed

GT50J322

Contextual Info: TOSHIBA GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 THE 4TH GENERATION Unit in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement-Mode High Speed : tf=0.25/*s Typ. (l£ = 50A)

1117 S Transistor

Abstract: 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits

GT30J322

Contextual Info: TOSHIBA GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT30J322 THE 4TH GENERATION Unit in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • • FRD Included Between Emitter and Collector Enhancement-Mode High Speed

UNR1111

Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits

1117 S Transistor

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and

GT5J311

Contextual Info: GT5J311 ,GT5J311 SM TO SHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J311, GT5J311(SM) HIGH POWER SWITCHING APPLICATIONS Unit in mm GT5J311 MOTOR CONTROL APPLICATIONS 1.32 The 3rd Generation Enhancement-Mode High Speed

UN1114

Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●

IC IL 1117

Abstract: im 1117 1117 S 3,3 Transistor 1117 S Transistor
Contextual Info: TO SHIBA GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 THE 4TH GENERATION U n it in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement-Mode High Speed : tf= 0 .2 5 //s Typ. (Iq = 50A)

TRANSISTOR BJ 003

Abstract: 2-10R1C GT5J301
Contextual Info: TO SHIBA GT5J301 GT5 J 3 0 1 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10 ±0.3 r The 3rd Generation Enhancement-Mode High Speed : tf=0.30;i*s Max. (l£ = 5A) Low Saturation Voltage : V ce (sat)~ 2.7V (Max.) (l£ = 5A)

1117 S Transistor

Abstract: TOSHIBA bat Transistor b 1117
Contextual Info: TOSHIBA TENTATIVE GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T5 J3 1 1 , SILICON N CHANNEL IGBT G T 5 J3 1 1 (S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT5J311 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode

GT10J312

Abstract: CP20A
Contextual Info: GT10J312,GT10J312 SM TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 1 0 J3 1 2 , G T 1 0 J3 1 2 ( S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS 1.32 The 3rd Generation Enhancement-Mode

Contextual Info: TOSHIBA GT5J301 GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 3.2 ±0.2 10 ±0.3 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/*s Max. (Iq = 5A)

Contextual Info: TOSHIBA GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) U n it in mm HIGH PO W ER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS The 3rd G eneration Enhancem ent-Mode H ig h Speed : tf =0.30^8 (M ax.)

1117 S Transistor

Contextual Info: GT10J312,GT10J312 SM TO SHIBA GT10J312, GT10J312(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode High Speed

Contextual Info: MAAP-010512 Amplifier, Power, 0.8 W 40.5 - 43.5 GHz Rev. V3 Features •      Functional Schematic Gain: 22 dB P1dB: 27 dBm High Linearity, OIP3: 38 dBm Integrated Power Detector Lead-Free 7 mm Laminate Package RoHS* Compliant and 260°C Reflow Compatible

ID1117

Contextual Info: MAAP-010512 Amplifier, Power, 0.8 W 40.5 - 43.5 GHz V2 Features •      Functional Schematic Gain: 22 dB P1dB: 27 dBm High Linearity, OIP3: 38 dBm Integrated Power Detector Lead-Free 7 mm Laminate Package RoHS* Compliant and 260°C Reflow Compatible

MAAP-010512

Contextual Info: MAAP-010512 Amplifier, Power, 0.8 W 40.5 - 43.5 GHz V2 Features •      Functional Schematic Gain: 22 dB P1dB: 27 dBm High Linearity, OIP3: 38 dBm Integrated Power Detector Lead-Free 7 mm Laminate Package RoHS* Compliant and 260°C Reflow Compatible

Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

Contextual Info: • bbS3T31 □ D 3 S l cifi flSl HIAPX N APIER PHILIPS/D ISCR ETE | BFR101A BFR101B b?E J> _ ^ N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source

Contextual Info: IMT2 h 7 > y ^ $ /'Transistors IM T2 — T<vu_51y *h 'I'i ff l / General Small Signal Amp. Isolated Mini-Mold Device • <8:1 • ^ -}fj\rj£ /D im e n s io n s U n it: mm 1) SMT (SC-59) £ (5 l— (*15 2 (SCO 5 7 > y ^ $ A fA o t i ' 5 c 2) S M T r o g liH iilit C c f c U ,