1206-8 CHIPFET LAYOUT Search Results
1206-8 CHIPFET LAYOUT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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PTH12060WAH |
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1.2 to 5.5 V 10-A, 12-V Input Non-Isolated Wide-Adjust Module 10-Through-Hole Module -40 to 85 |
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THS1206IDAR |
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12-Bit, 6 MSPS ADC Quad Ch. (Config.), DSP/uP IF, Integ. 16x FIFO, Channel AutoScan, Low Power 32-TSSOP -40 to 85 |
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PTH12060WAD |
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1.2 to 5.5 V 10-A, 12-V Input Non-Isolated Wide-Adjust Module 10-Through-Hole Module -40 to 85 |
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PTH12060YAZT |
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10 A 12-V Input Bus Termination Power Module for DDR/QDR Memory 10-Surface Mount Module -40 to 85 |
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1206-8 CHIPFET LAYOUT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si5935DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V - 3.4 0.171 at VGS = - 1.8 V - 2.9 1206-8 ChipFET APPLICATIONS • Load Switch • PA Switch |
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Si5935DC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si5935DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V - 3.4 0.171 at VGS = - 1.8 V - 2.9 1206-8 ChipFET APPLICATIONS • Load Switch • PA Switch |
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Si5935DC 2002/95/EC Si5935DC-T1-E3 Si5935DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si5935DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V - 3.4 0.171 at VGS = - 1.8 V - 2.9 1206-8 ChipFET APPLICATIONS • Load Switch • PA Switch |
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Si5935DC 2002/95/EC Si5935DC-T1-E3 Si5935DC-T1-GE3 11-Mar-11 | |
Contextual Info: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices |
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Si5457DC 2002/95/EC Si5457DC-Telectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices |
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Si5457DC 2002/95/EC Si5457DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
S83054Contextual Info: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET® |
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Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 11-Mar-11 S83054 | |
Contextual Info: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET® |
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Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices |
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Si5457DC 2002/95/EC Si5457DC-emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si5435BDC-T1-GE3
Abstract: SI5435BDC
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Si5435BDC Si5435BDC-T1-E3 Si5435BDC-T1-GE3 11-Mar-11 | |
Contextual Info: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET® |
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Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SI5435b
Abstract: Si5435BDC-T1-GE3 AN811 Si5435 SI5435BDC
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Si5435BDC Si5435BDC-T1-E3 Si5435BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI5435b AN811 Si5435 | |
SI5435BDCContextual Info: Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V - 5.9 0.080 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs 1206-8 ChipFET® |
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Si5435BDC Si5435BDC-T1-E3 Si5435BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET® |
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Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI5435BDCContextual Info: Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V - 5.9 0.080 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs 1206-8 ChipFET® |
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Si5435BDC Si5435BDC-T1-E3 Si5435BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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so8 pcb pattern
Abstract: 1206-8 chipfet layout vishay so-8 pin dimensions
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AND8237/D so8 pcb pattern 1206-8 chipfet layout vishay so-8 pin dimensions | |
Contextual Info: AND8061/D Dual-Channel 1206A ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance http://onsemi.com APPLICATION NOTE Introduction New ON Semiconductor ChipFETs in the leadless 1206A package features the same outline as popular 1206A resistors and capacitors but provide all the performance of |
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AND8061/D r14525 | |
ta811Contextual Info: TA811 Vishay Siliconix Single-Channel 1206-8 ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION New Vishay Siliconix ChipFETst in the leadless 1206-8 package feature the same outline as popular 1206-8 resistors |
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TA811 28-Mar-00 ta811 | |
AN811
Abstract: 1206-8 chipfet layout 1206 pads layout 1206 8 ChipFET Resistor dimensions 1206 to mm AN812
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AN811 AN812 12-Dec-03 AN811 1206-8 chipfet layout 1206 pads layout 1206 8 ChipFET Resistor dimensions 1206 to mm AN812 | |
AN811Contextual Info: AN811 Vishay Siliconix Single-Channel 1206-8 ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION The legs of the device are very short, again helping to reduce the thermal path to the external heatsink/pcb and allowing a |
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AN811 28-Mar-00 AN811 | |
Contextual Info: AND8044/D Single-Channel 1206A ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance http://onsemi.com APPLICATION NOTE INTRODUCTION New ON Semiconductor ChipFETs in the leadless 1206A package feature the same outline as popular 1206A resistors and capacitors but provide all the performance of |
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AND8044/D r14525 | |
Contextual Info: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated |
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Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated |
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Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
1206 8 ChipFETContextual Info: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated |
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Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 11-Mar-11 1206 8 ChipFET | |
1206 8 ChipFETContextual Info: AND8044/D Single-Channel 1206A ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance http://onsemi.com APPLICATION NOTE INTRODUCTION New ON Semiconductor ChipFETs in the leadless 1206A package feature the same outline as popular 1206A resistors and capacitors but provide all the performance of |
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AND8044/D r14525 AND8044/D 1206 8 ChipFET |