125JXS Search Results

tda 11135

Abstract: TDA 11115 VCXO 2048khz crystal MICROPROCESSOR 68000 intel 80c188 intel 81 imo tdms timer tda 11135 voltage data 68020-16 80C188
Contextual Info: 7 7 S G S -T H O M S O N @ 03 iHi glT[ïM 0(g@ STLC 5464 M U LTI-H D LC W ITH n x 64 SW ITC H IN G M ATRIX ASSO CIATED A D VA N C E DATA • 32 Tx HD LC s W ITH BR O A D C A S T IN G C A P A ­ BILITY A N D /O R C S M A /C R FU N C TIO N W ITH A U T O M A T IC R ES TA R T IN C AS E O F Tx

4c1m16c

Abstract: 16C7S
Contextual Info: ADVANCE MT4 L C1 M16CX S 1 MEG X 16 DRAM I^ IIC R O N DRAM 1 M EG X 1 6 DRAM m 5.0V SELF REFRESH (MT4C1M16CX S 3.0/3.3V, SELF REFRËSH (MT4LC1 M II dCX S) FEATURES • In d u stry s ta n d a rd x l6 p in o u ts, tim in g , fu n ctio n s a n d p ack ag es • H ig h -p erfo rm an ce, C M O S silicon-gate p ro cess

MT4C1670

Contextual Info: MICRON TECHNOLOGY INC 5SE T> • falllSHI DD0HS21 SbT ■ URN MT4C1670/1 L 64K X 16 DRAM MICRON rn TECHNOLOGY INC. DRAM 6 4 K x 1 6 DRAM NEW T -w -zb -n STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH • Industry standard xl6 pinouts, timing, functions and packages

MT4C1664

Contextual Info: MICRO N T E C H N O L O G Y INC 5SE » • blllSLtT 00044fl5 7T3 ■ MT4C1664/5 L 64Kx 16 DRAM MICRON B URN TECHNOLOGY INC _ ; T ' - a t - z v n DRAM 64K X 16 DRAM LOW POWER EXTENDED REFRESH • Industry standard x l6 pinouts, timing, functions

Contextual Info: MT4C1664/5 L 64K X 16 DRAM I^ IIC R O N 64K x 16 DRAM DRAM LOW POWER EXTENDED REFRESH FEATURES • Industry standard x l6 pinouts, timing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply • All device pins are fully TTL compatible

Contextual Info: MT2D18 1 MEG X 8 DRAM MODULE M IC R O N 1 MEG DRAM MODULE X8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon-gate process

Contextual Info: MICRON SEMICONDUCTOR IN C b? E D • blllSMH OGG'iflba 217 M M R N PRELIMINARY MICRON I M T4LC 1004J S 4M E Gx1 D R A M sevicoNSucroa inc . DRAM 4 MEG x 1 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Single +3.3V ±0.3V pow er supply • 1,024-cyd e refresh distributed across 16ms

Contextual Info: «e a a 1981 MICRON MT4C4001 J L 1 MEG X 4 DRAM I DRAM 1 MEG x 4 DRAM STANDARD OR LOW POWER, EXTENDED REFRESH 3J > FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L) • Industry-standard x4 pinout, timing, functions and

RXTNB 2

Contextual Info: PXB 4220 SIEM ENS 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w .7 Features. 9

Contextual Info: MICRON TECHNOLOGY INC SSE D blllSMT OOCmR'ì'ì fiT? • MRN MT8D88C25632 256K x 32, 512K x 16 1C D R AM C A R D MICRON ■ ■ TECHNOLOGY. INC. _ :_ ~r-q 1C DRAM CARD 1 MEGABYTE 256K x 32, 512Kx 16 PIN ASSIGNMENT End View 88-Pin Card (U-1) • JEIDA, JEDEC and PCMCIA standard 88-pin IC

Contextual Info: ADVANCE MT4 L C2M8B1/2 S 2 MEG x 8 DRAM I^ IC Z R O N 2 MEG x 8 DRAM 5.0V SELF REFRESH (MT4C2M8B1/2 S) 3.0/3.3V, SELF REFRESH (MT4LC2M8B1/2 S) FEATURES PIN ASSIGNMENT (Top View) • SELF REFRESH, i.e. "Sleep M ode" • Industry standard x8 pinouts, tim ing, functions and

4c16257

Contextual Info: PRELIMINARY M T 4C 16256/7/8/9 L 256K X 16 W ID E DRAM M IC R O N WIDE DRAM 256K x 16 DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.