128KX1 Search Results

HY62UF16201A-I

Abstract: HY62UF16201A
Contextual Info: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others

555H

Abstract: MX29F200B MX29F200T
Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

Contextual Info: Preliminary b q 4 0 2 4 / b q 4 0 2 4 Y BENCHMARQ 128KX16 Nonvolatile SRAM Features General Description > D ata retention in the absence of The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The in te g ra l co n tro l circ u itry an d

Contextual Info: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900*  Weight FEATURES  Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical  Access Times of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: MEMORY MODULE MRAM 128Kx16-SOP 3DMR2M16VS2427 Magnetoresistive Ram MODULE 2 Mbit MRAM organized as 128Kx16 Pin Assignment Top View SOP 54 (Pitch : 0.80 mm) Features - Organized as 128Kx16. - Single +3.3V +/-0.3V power supply operation. - Symetrical high-speed read and write fast access

Contextual Info: WSF2816-39XX 128Kx16 SRAM / 512Kx16 NOR FLASH MODULE  Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation FEATURES  Access Times of 35ns SRAM and 90ns (FLASH)  Weight:  Packaging • WSF2816-39G2UX - 8 grams typical

Contextual Info: HY62QF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others

Contextual Info: VZÀ WHITE /M IC R O E L E C T R O N IC S 128Kx16 SRAM/FLASH MODULE WSF128K16-XXX P R E LIM IN A R Y * FEATURES FLASH MEM ORY FEATURES • Access Times of 35nS SRAM and 70nS (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70nS (SRAM) and 120nS (FLASH)

Contextual Info: K7A203600B K7A203200B K7A201800B Preliminary 64Kx36/x32 & 128Kx18 Synchronous SRAM Document Title 64Kx36 & 64Kx32 & 128Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft Dec. 10. 2001 Preliminary 0.1 1. Add tCYC 250,225, 200MHz bin.

23265

Contextual Info: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L1618C1A Advance Information 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview Features The N02L1618C1A is an integrated memory

Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

29F200T

Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

256x16* STATIC RAM

Abstract: c28w Video RAM SIO12 AK5216128WV-10 AK5216128WV-12 AK5216128WV-80 SIo-12 BY164 48aa50
Contextual Info: ACCUTEK MICROCIRCUIT 31E D • 01071=47 GOGOCia? T ■ ACU T -4 6 -2 3 -2 0 ACCUTEK MICROCIRCUIT AK5216128WV 128Kx 16/256x16 Dual Port Video Ram The Accutek AK5216128 is a 2 MEG-bit Dual Port Dynamic Memory Video Module. The module contains a 128Kx16 DRAM

SD10

Abstract: SD13 SD14 SD15 WSF128K16-XXX scs 2003
Contextual Info: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES TTL Compatible Inputs and Outputs Access Times of 35ns SRAM and 70ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Access Times of 70ns (SRAM) and 120ns (FLASH)

128KX16

Abstract: DQ10C
Contextual Info: BENCHMARQ_ bq4024/bq4024Y 128Kx16 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit sta tic RAM organized as 131,072 w ords by 16 bits. The in te g ral control circu itry an d lith ­

KM718V787-10

Abstract: KM718V787-8 KM718V787-9
Contextual Info: PRELIMINARY KM718V787 128Kx18 Synchronous SRAM Document Title 128Kx18-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. History Draft Date Remark Rev. 0.0 Initial draft Nov. 02. 1996 Preliminary Rev. 1.0 Final spec release

Contextual Info: KM718V787A 128Kx18 Synchronous SRAM Document Title 128Kx18-Bit Synchronous Burst SRAM Revision History v. No. Historv Draft Date REMARK 0.0 Initial draft. Sep. 16. 1998 Prelim inary 1.0 Final spec release. Nov. 16. 1998 Final 2.0 Add Supply voltage 2.5V

Contextual Info: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/

Contextual Info: PRELIMINARY 128Kx18 Synchronous SRAM KM718V789A Document Title 128Kx18-Bit Synchronous Pipelined Burst SRAM BeyisionHislory Rev. No. 0.0 History Initial draft Draft Date Remark Sep. 16. 1998 Prelim inary The attached data sheets are prepared and approved by SAM S U N G Electronics. S AM SU NG Electronics CO., LTD. reserve the right to change the

SM-1994

Contextual Info: HY62UF16201 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201 is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62UF16201 uses high performance full CMOS process technology and designed for high speed low power circuit

A82DL1632TG-70UF

Abstract: DL1632
Contextual Info: A82DL16x2T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2M (128Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit

Contextual Info: HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Low Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Apr. 6. 2003 Final This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

Contextual Info: WSF128K16-XXX •lì Hi-R£LiASIÜTY PRODUCT 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES ■ Com m ercial, Industrial and M ilita ry Tem perature Ranges ■ Access Tim es o f 35ns SRAM and 70ns (FLASH) ■ TTL C om patible Inputs and O utputs ■ Access Tim es o f 70ns (SRAM) and 120ns (FLASH)

25fv

Abstract: EM128P16B EM128P16T 48-pin TSOP standard dimensions
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128P16 Preliminary EM128P16 Family 128Kx16 bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128P16 is an integrated memory device