ICCX32 Search Results

TL 1838

Contextual Info: 128K x 32 Static RAM Module Features Functional Description • High-density 4-megabit SRAM module The CYM1838 is a very high perform ance 4-megabit static R A M m odule organized as 128K words by 32 bits. T he m odule is constructed using four 128K x 8 static

Contextual Info: 64KX4 BASED Dense-Pac Microsystems, inc. C M O S SRAM FAM ILY DESCRIPTION: The Dense-Pac 64K X4 Based Fam ily consists of static ra n d o m a c c e s s m e m o rie s S R A M S o rg a n iz e d as described below. T h ese m em ories are ideally suited for use in large

Contextual Info: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900*  Weight FEATURES  Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical  Access Times of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES  Access Times of 125 and 150ns  Automatic Page Write Operation  MIL-STD-883 Compliant Devices Available  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection

Contextual Info: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES  Access Times of 125 and 150ns  Automatic Page Write Operation  MIL-STD-883 Compliant Devices Available  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection

Contextual Info: WSF128K32V-XG2TX 128KX32 SRAM/FLASH 3.3V MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 120ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 25ns (SRAM) and 90ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 16K bytes each

S128K32

Abstract: ACT-S128K32 ACT-S128K32V 5962-9559509HMX 5962-9318710H4X
Contextual Info: ACT-S128K32 High Speed 4 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 128K x 8 SRAMs in one MCM ■ Overall configuration as 128K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order

LT 1385

Contextual Info: a WHITE /MICROELECTRONICS 128Kx32 SRAM/FLASH MODULE WSF128K32-XH2X PRELIM INARY * FEATURES FLASH MEMORY FEATURES • A cce ss Tim es of 25ns SRAM and 120ns (FLASH) ■ ■ A cce ss Tim es of 25ns (SRAM ) and 90ns (FLASH) ■ Sector A rc h ite c tu re • 8 equal size sectors o f 16K bytes each

29h2

Abstract: CQFj 44 29g2
Contextual Info: WSF512K32-29XX HI-RELIABILITY PRODUCT 512KX32 SRAM / FLASH MODULE PRELIMINARY* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 90ns (FLASH) ■ 100,000 Erase/Program Cycles ■ Packaging • 66 pin, PGA Type, 1.385" square HIP, Hermetic Ceramic

Contextual Info: ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module Features 4 Low Power CMOS 128K x 8 SRAMs in one MCM • Overall configuration as 128K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order

SAMSUNG SRAM

Abstract: 5962-9318706H4X D1659
Contextual Info: ii ii ii ii ii ii ii ii ACT-S128K32 High Speed - 4 iviegamt o k a m iviuiticnip ivioauie . • ■■ A ■ ■ ■ ■ ■ I ■■ I Features ■ ■ ■ ■ ■ ■ ■ 4 Low Power IDT or Samsung CMOS 128K x 8 SRAMs in one MCM

5962-9318706H4X

Abstract: military mcm 1553 ACT-S128K32 ACT-S128K32V 5962-9318705HTX 5962-9318706HTX 5962-9318709H4X
Contextual Info: ACT-S128K32 High Speed 4 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 128K x 8 SRAMs in one MCM CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm ■ Overall configuration as 128K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order

Contextual Info: P CYM1828 PRELIMINARY / CYPRESS 32K x 32 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module • High-speed CMOS SRAMs — Access time o f 25 ns • 66-pin, 1.1-inch-square PGA package • Low active power — 3.3W max.

Contextual Info: WE128K32-XXX HI-RELIABILITY PRODUCT 128Kx32 EEPROM MODULE, SMD 5962-94585 FEATURES • Access Times of 120, 140, 150, 200, 250, 300ns ■ Packaging: • 66-pin, PGA Type, 27.3mm 1.075" square, Hermetic Ceramic HIP (Package 400) ■ ■ ■ ■ ■ ■ ■

Contextual Info: WF128K32-XXX WHITE /MICROELECTRONICS □ 128Kx32 12V FLASH MODULE, SMD 5962-94610 FEATURES • Access Tim es of 120,150 and 200nS Organized as 128Kx32 ■ Packaging Commercial, Industrial and M ilita ry T e m p e ra tu re Ranges • 66 pin, PGA Type, 1.075 inch square, Hermetic

CA051

Abstract: 16A06
Contextual Info: Z2 WF128K32-XXX M/HITE /M IC R O ELEC T R O N IC S 128Kx3212V FLASH MODULE • Organized as 128Kx32 FEATURES ■ 12 V o lt Programming; 5V ±10% Supply ■ Access Times of 120, 150 and 200nS ■ Low Power CMOS, 4m A Standby Typical ■ Packaging ■ Hardw are and Softw are W rite Protection

Contextual Info: 128Kx32 5V FLASH MODULE PRELIMINARY* FEATURES • A ccess Times of 120 and 150nS ■ ■ Packaging ■ Organized as 128Kx32 ■ Commercial, Industrial and M ilitary Temperature Ranges ■ 5 Volt Programming. 5V ± 1 0 % Supply. ■ Low Power CM OS, 1.5mA Standby

WE128K32-XG1TX

Abstract: WE128K32-XG1UX WE128K32-XH1X WE128K32-XXX WE128K32-XG2TX
Contextual Info: WE128K32-XXX 128Kx32 EEPROM MODULE, SMD 5962-94585 FEATURES • ■ ■ ■ ■ ■ ■ ■ Low Power CMOS Automatic Page Write Operation Page Write Cycle Time: 10ms Max Data Polling for End of Write Detection Hardware and Software Data Protection TTL Compatible Inputs and Outputs

Contextual Info: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES  Access Times of 80*, 90, 120, 150ns  Automatic Page Write Operation  MIL-STD-883 Compliant Devices Available  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection

WE32K32-XXX

Contextual Info: White Electronic Designs WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES „ Access Times of 80*, 90, 120, 150ns „ Data Retention at 25°C, 10 Years „ MIL-STD-883 Compliant Devices Available „ Write Endurance, 10,000 Cycles Packaging: „ • 68 lead, Hermetic CQFP G2U , 122.4mm

WSF512K32-XXX

Contextual Info: White Electronic Designs WSF512K32-XXX 512KX32 SRAM / FLASH MODULE „ FEATURES „ „ Access Times of 25ns SRAM and 70, 90ns (FLASH) Packaging • 66 pin, PGA Type, 1.385" square HIP, Hermetic Ceramic HIP (Package 402) „ FLASH MEMORY FEATURES „ „ • 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880")

A016 SMD

Abstract: military mcm 1553 O28 Package ACT-RS128K32
Contextual Info: RAD Tolerant ACT–RS128K32 High Speed 4 Megabit SRAM Multichip Module Preliminary Features • 4 Low Power CMOS 128K x 8 SRAMs in one MCM ■ Overall configuration as 128K x 32 ■ Tolerant to 30KRad Si CIRCUIT TECHNOLOGY ■ Latch-up Immunity to 112MeV/(mg/cm2)

WSF41632-22XX

Abstract: wsf41632 WSF41632-22H2X
Contextual Info: White Electronic Designs WSF41632-22XX PRELIMINARY* 128KX32 SRAM & 512Kx32 FLASH MIXED MODULE FEATURES Built-in decoupling caps and multiple ground pins for low noise operation Access times of 25ns SRAM and 120ns (FLASH) Weight - 13 grams typical Packaging

Contextual Info: WSF128K32-XH2X PRELIMINARY* 128KX32 SRAM/FLASH MODULE FEATURES FLASH MEMORY FEATURES  Access Times of 25ns SRAM and 70, 90 and 120ns (FLASH)  10,000 Erase/Program Cycles  Sector Architecture  Packaging: • 8 equal size sectors of 16K bytes each