128MSDRAM Search Results
128MSDRAM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
A11 MARKING CODE
Abstract: MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design
|
Original |
128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 60-ball, 11x13 A11 MARKING CODE MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design | |
Contextual Info: PRELIMINARY 128Mb: x4, x8, x16 SDRAM MT48LC32M4A2 - 8 Meg x 4 x 4 banks MT48LC16M8A2 - 4 Meg x 8 x 4 banks MT48LC8M16A2 - 2 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html |
Original |
128Mb: PC100- PC133-compliant 096-cycle MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 128MSDRAM | |
256MSDRAM
Abstract: celestica
|
Original |
64/72V8300/16220GU 64/72-Bit 168-Pin PC100 PC133 PC133 256MSDRAM celestica | |
8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PC133 registered reference design marking B44 MT48LC16M8A2BB MT48LC16M8A2P
|
Original |
128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 09005aef8091e66d/Source: 09005aef8091e625 128MSDRAM 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PC133 registered reference design marking B44 MT48LC16M8A2BB MT48LC16M8A2P | |
8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2
|
Original |
128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC66-, PC100- PC133-compliant 096-cycle 128MSDRAM 8M16 | |
128MSDRAMContextual Info: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/datasheets/sdramds.html |
Original |
128Mb: PC100-, PC133-compliant 096-cycle MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 60-pin, 11x13 128MSDRAM | |
Contextual Info: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • PC100-, and PC133-compliant |
Original |
128Mb: PC100-, PC133-compliant 096-cycle MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 60-pin, 11x13 | |
8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2
|
Original |
128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 60-pin, 11x13 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 | |
L-23014-01
Abstract: L24002 mitsubishi cdram
|
Original |
L-21001-0B L-21002-0I x4/x8/x16 L-23014-01 L24002 mitsubishi cdram | |
64V32300GU-8-AContextual Info: HYS 64/72V32300GU SDRAM-Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length, and Wrap Sequence Sequential & |
Original |
64/72V32300GU 64/72-Bit 168-pin PC100 PC133 Aprl99MODULE 256Mbit 64V32300GU-8-A | |
HYS72V1Contextual Info: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • Programmed Latencies: • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications Product Speed CL tRCD tRP • PC100 and PC133 versions |
Original |
64V8301GU 64-Bit 168-pin PC100 PC133 Aprl99MODULE HYS72V1 | |
256MDDRSDRAM
Abstract: B22XX
|
Original |
64/72V64220GU 64/72-Bit 168-pin PC100 PC133 256MDDRSDRAM B22XX | |
Contextual Info: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory |
Original |
64/72V16300/32220GU 64/72-Bit 168-Pin PC100 PC133 PC133 | |
L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
|
Original |
L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP | |
|
|||
A11 MARKING CODE
Abstract: MARK 8E diode 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design
|
Original |
128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 60-ball, 11x13 A11 MARKING CODE MARK 8E diode 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design | |
8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PC133 registered reference design MT48LC16M8A2BB MT48LC16M8A2P
|
Original |
128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 60-BALL, 025mm. 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 PC133 registered reference design MT48LC16M8A2BB MT48LC16M8A2P | |
MT48LC16M8A2BB
Abstract: PC133 registered reference design
|
Original |
128Mb: PC100-, PC133-compliant 096-cycle MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 54-BALL, 09005aef8091e66d/Source: 09005aef8091e625 MT48LC16M8A2BB PC133 registered reference design | |
w9864g2gh-7
Abstract: MT48LC8M16A2 sdram controller Memory bank size ADSP21369 128 bit processor schematic ADSP-21367 ADSP21368 ADSP-21368 ADSP21369 ADSP-21369
|
Original |
EE-286 ADSP-21368 ADSP-2137x ADSP-21367, ADSP-21368, ADSP-21369 ADSP-21368 W986432DH w9864g2gh-7 MT48LC8M16A2 sdram controller Memory bank size ADSP21369 128 bit processor schematic ADSP-21367 ADSP21368 ADSP21369 ADSP-21369 | |
8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2
|
Original |
128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 11x13 60-pin, 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 | |
8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05
|
Original |
128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 096-cycle 096-cyc900 09005aef8091e66d/Source: 09005aef8091e625 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 | |
Contextual Info: HYS 72Vx2xxGR PC100 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules 64 MB, 128 MB, 256 MB, 512 MB & 1 GB Densities • 168-pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main memory applications • Programmable CAS Latency, Burst Length, |
Original |
72Vx2xxGR PC100 168-pin TSOPII-54 Aprl99MODULE 256Mbit 512MByte | |
sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
|
Original |
L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi | |
smd transistor x8
Abstract: 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram
|
Original |
128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 192-cycle 09005aef8091e66d/Source: 09005aef8091e625 128MSDRAM smd transistor x8 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram | |
8M16
Abstract: MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05
|
Original |
128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 096-cycle 09005aef8091e66d/Source: 09005aef8091e625 128MSDRAM 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 TN-48-05 |