64MDRAM Search Results

4mx16 edo

Abstract: M5M465165 ta 9812
Contextual Info: A L-21038-01 MITSUBISHI ELECTRIC 64MDRAM 3rd Generation Definition of Part-Number M5M4 XX XX X B X - X X T U 3rd Generation f Density / Refresh Word Organization Mode Package Speed Item Self Refresh 65 - 64M / 4K 64ms 67 - 64M / 8K ( 64ms) 40 - 16Mx4 80 - 8Mx8

M5M465805ATP

Abstract: 4mx16 edo M5M465400ATP
Contextual Info: • A . MITSUBISHI ELECTRIC - L-21011-01 MITSUBISHI 2nd Generation 64MDRAM Series ~h Part Number Word Organization / Refresh / Function Package Speed Item Self Refresh Production M5M467400AJ

Contextual Info: L-21021-01 MITSUBISHI ELECTRIC \ 64MDRAM x4/x8 Package Outline (SOJ) +0.05 0.2 0,02 - r - 'S J cn ö o^+11OÑ 2.85±0.1 J A MITSUBISHI L-21022-01 ELECTRIC 64MDRAM (x4/x8) Package Outline (TSOP II) 11.76+0.2 • n n n n n n n n n n n n n n n n J dUUUUUUUUUUUUUUU

Contextual Info: A MITSUBISHI L-21019-01 ELECTRIC 64MDRAM 16Mx4, 8Mx8 Pin Configuration 8M X 8 16M X 4 Vcc DQ1 DQ2 D03 D 04 NC Vcc /W /RAS AO Al A2 A3 A4 A5 Vcc Vcc DQ1 DQ2 NC NC NC NC AV /RAS AO Al A2 A3 A4 A5 Vcc W 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32Pin SOJ or TSOP2

Contextual Info: r MITSUBISHI ELECTRIC - Mitsubishi Technical Direction of DRAM High Performance, Low Power,Hig h Density,High Speed etc. High Density L-21001-01 MITSUBISHI ELECTRIC -

Contextual Info: HYB39S6440x/80x/16xT 64MBit Synchronous DRAM SIEM EN 64 MBit Synchronous DRAM Advanced Information • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command and Read with Single Controlled Write

L-23014-01

Abstract: L24002 mitsubishi cdram
Contextual Info: L-21001-0B MITSUBISHI ELECTRIC Mitsubishi DRAM Technical Direction High Performance, Low Power,High Density,High Speed etc. High Density Wide Bit Organization 1G High Speed 512M Direct Rambus TM x32 256M DDR 128M SDRAM EDO Fast Page 64M DRAM Self Refresh

64M-DRAM

Contextual Info: INFORMATION NOTE Second Generation 64M - DRAM Characterisation Data 10.96 INFO64M4.DOC 64M-DRAM This information note is intended to provide technical information on the SIEMENS second generation 64M-DRAM Dynamic Access Memories operating at the 3.3 V VCC

L24002

Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities

BT 804

Contextual Info: SIEMENS Contents Page In tro d u c tio n .9 Sum m ary o f T ypes incl. ordering codes . 13

sandisk micro sd card pin

Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM

3164165

Abstract: TSOP-II-32 GPJ05855 hyb3165165 cmos dram 8m x 16 TSOPII-50 3165165AT 64M-DRAM marking AJ 7 3164805
Contextual Info: HYB 3164 5 400/5 AJ/AT -40/-50/-60 64M x 4 - Bit Dynamic RAM HYB 3164(5)800/5 AJ/AT -40/-50/-60 8M x 8 - Bit Dynamic RAM HYB 3164(5,6)160/5 AT -40/-50/-60 4M x 16 -Bit Dynamic RAM INFORMATION NOTE 64M - Bit DYNAMIC MEMORIES (Second Generation) General Information

BA0A11

Abstract: 39S64800T-80 39S648Q0T-10 SMD MARKING CODE aO9
Contextual Info: HYB39S6440X/8ÖX/16xT 64MBit Synchronous DRAM SIEM ENS 64 MBit Synchronous DRAM Advanced Information • High Performance: • Multiple Burst Read with Operation Single Write -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns • Data Mask for Read / Write control x4, x8