Untitled
Abstract: No abstract text available
Text: TLV320AIC3262 SLAS679 – DECEMBER 2011 www.ti.com Ultra Low Power Stereo Audio Codec With miniDSP, DirectPath Headphone, and Stereo Class-D Speaker Amplifier FEATURES • 1 • • • • • • SE Line-Ins Microphone Analog or Digital • • • •
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TLV320AIC3262
SLAS679
101dB
48kHz
8-192kHz
128mW
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fet 741
Abstract: VSC7924
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5Gb/s Laser Diode Driver VSC7924 Features • Rise Times Less Than 100ps • Single Power Supply • High Speed Operation Up to 2.5Gb/s NRZ Data • Direct Access to Modulation and Bias FET’s
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VSC7924
100ps
VSC7924
G52156-0,
fet 741
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D2322
Abstract: ADSP-2100 ADSP2104 ADSP-2104 ADSP-2104L ADSP-2109 eprom 2764 "vector instructions" saturation
Text: a Low Cost DSP Microcomputers ADSP-2104/ADSP-2109 FUNCTIONAL BLOCK DIAGRAM SUMMARY 16-Bit Fixed-Point DSP Microprocessors with On-Chip Memory Enhanced Harvard Architecture for Three-Bus Performance: Instruction Bus & Dual Data Buses Independent Computation Units: ALU, Multiplier/
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ADSP-2104/ADSP-2109
16-Bit
ADSP-2104KP-80
ADSP-2109KP-80
ADSP-2104LKP-55
ADSP-2109LKP-55
68-Lead
D2322
ADSP-2100
ADSP2104
ADSP-2104
ADSP-2104L
ADSP-2109
eprom 2764
"vector instructions" saturation
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RDRAM RAMBUS
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE6D Direct RambusTM DRAM RIMMTM Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R256FKE6D
256M-BYTE
128M-WORD
16-BIT)
MC-4R256FKE6D
PD488588)
600MHz,
711MHz
800MHz
RDRAM RAMBUS
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Untitled
Abstract: No abstract text available
Text: HB52RF1289E2U-75B EO 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 133 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC133 SDRAM L E0019H10 (1st edition) (Previous ADE-203-1195A (Z) Preliminary Jan. 30, 2000 Description Pr uc od The HB52RF1289E2U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been
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HB52RF1289E2U-75B
128-Mword
72-bit,
PC133
E0019H10
ADE-203-1195A
HB52RF1289E2U
HB52RF1289E2U
256-Mbit
HM5225405BTB)
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ICS8525
Abstract: ICS8525BG ICS8525BG-T
Text: ICS8525 Integrated Circuit Systems, Inc. LOW SKEW, 1-TO-4 LVCMOS-TO-LVHSTL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS8525 is a low skew, high performance 1-to-4 LVCMOS-to-LVHSTL fanout buffer and a HiPerClockS member of the HiPerClockS™ family of High
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ICS8525
ICS8525
8525BG
ICS8525BG
ICS8525BG-T
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Hitachi DSA002714
Abstract: Nippon capacitors
Text: HB54R1G9F2-A75B/B75B/10B 1 GB Registered DDR SDRAM DIMM 128-Mword x 72-bit, 2-Bank Module 36 pcs of 64 M × 4 Components ADE-203-1172 (Z) Preliminary Rev. 0.0 Apr. 10, 2000 Description The HB54R1G9F2 is a 64M × 72 × 2-bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of
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HB54R1G9F2-A75B/B75B/10B
128-Mword
72-bit,
ADE-203-1172
HB54R1G9F2
256-Mbit
HM5425401BTB)
Hitachi DSA002714
Nippon capacitors
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ICS842S104
Abstract: 100MHZ 200MHZ ICS842S104CG
Text: Crystal-to-HSTL 100MHz / 200MHz PCI Express Clock Synthesizer ICS842S104 DATA SHEET General Description Features The ICS842S104 is a PLL-based clock generator specifically designed for PCI Express™ Clock Generation 2 applications. This device generates either a 200MHz or 100MHz differential HSTL
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100MHz
200MHz
ICS842S104
ICS842S104
200MHz
25MHz.
25MHz
ICS842S104CG
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ICS889834
Abstract: IFR2042 MO-220
Text: Low Skew, 2-to-4 LVCMOS/LVTTL-toLVPECL/ECL Clock Multiplexer ICS8S89834I DATA SHEET General Description Features The ICS8S89834I is a high speed 2-to-4 LVCMOS/LVTTL-to-LVPECL/ECL Clock Multiplexer. HiPerClockS The ICS8S89834I is optimized for high speed and very
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ICS8S89834I
ICS8S89834I
16-pin
ICS889834
IFR2042
MO-220
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Untitled
Abstract: No abstract text available
Text: HB52R1289E2U-A6B/B6B Description L EO 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 100 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC100 SDRAM E0016H10 (1st edition) (Previous ADE-203-1194A (Z) Preliminary Jan. 30, 2001 uc od Pr The HB52R1289E2U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been
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HB52R1289E2U-A6B/B6B
128-Mword
72-bit,
PC100
E0016H10
ADE-203-1194A
HB52R1289E2U
256-Mbit
HM5225405BTB)
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ldqb
Abstract: mos B52 diode u2 a54 surface mount transistor A61 MC-4R256FKE8S PD488588 PD488588FF
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8S Direct Rambus DRAM SO-RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking
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MC-4R256FKE8S
256M-BYTE
128M-WORD
18-BIT)
MC-4R256FKE8S
PD488588)
800MHz
M01E0107
ldqb
mos B52
diode u2 a54
surface mount transistor A61
PD488588
PD488588FF
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Untitled
Abstract: No abstract text available
Text: ICS8523 Integrated Circuit Systems, Inc. LOW SKEW, 1-TO-4 DIFFERENTIAL-TO-LVHSTL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS8523 is a low skew, high performance 1-to-4 Differential-to-LVHSTL fanout buffer HiPerClockS and a member of the HiPerClockS™ family of High
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ICS8523
ICS8523
8523BG
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LDQB
Abstract: MC-4R256FKE8D PD488588 PD488588FF
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8D Direct Rambus DRAM RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT Description EO The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R256FKE8D
256M-BYTE
128M-WORD
18-BIT)
MC-4R256FKE8D
PD488588)
600MHz,
711MHz
800MHz
LDQB
PD488588
PD488588FF
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MC-4R256FKE8S
Abstract: PD488588 PD488588FF
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8S Direct Rambus DRAM SO-RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT Description EO The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking systems,
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MC-4R256FKE8S
256M-BYTE
128M-WORD
18-BIT)
MC-4R256FKE8S
PD488588)
800MHz
PD488588
PD488588FF
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AAEC-2000
Abstract: CO-029 circuit diagram of gsm smart switch aaec
Text: Preliminary Information Agilent AAEC-2000 Information Appliance Processor Mobile Information Appliance Platform Data Sheet Description The Agilent AAEC-2000 is a high-performance, low power, super-integrated system chip designed to be the heart of a Personal Multimedia Digital Assistant. Its
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AAEC-2000
ARM920TTM
ARM920T
16Kbytes
40Kbytes
CO-029
circuit diagram of gsm smart switch
aaec
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500-187
Abstract: CS5323 CS5322 CS5322-BL CS5322-KL LT1021 576716 dc/deca d16
Text: CS5322 CS5323 Semiconductor Corporation 24-Bit Variable Bandwidth A/D Converter Features General Description • • Dynamic Range The CS5323 analog modulator and the CS5322 digital filter function together as a unique high resolution A/D converter intended for geophysical and other applicat io ns w hi c h r e qu ir e hi gh dy namic r ange. The
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CS5322
CS5323
24-Bit
CS5323
CS5323/CS5322
130dB
120dB
4096X
500-187
CS5322-BL
CS5322-KL
LT1021
576716
dc/deca d16
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AIC3262
Abstract: E1 PCM CODEC TLV320AIC3262 p1r52
Text: TLV320AIC3262 SLAS679 – DECEMBER 2011 www.ti.com Ultra Low Power Stereo Audio Codec With miniDSP, DirectPath Headphone, and Stereo Class-D Speaker Amplifier FEATURES • 1 • • • • • • SE Line-Ins Microphone Analog or Digital • • • •
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TLV320AIC3262
SLAS679
101dB
48kHz
8-192kHz
128mW
AIC3262
E1 PCM CODEC
TLV320AIC3262
p1r52
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Hitachi DSA00190
Abstract: No abstract text available
Text: HB52RF1289E2U-75B 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 133 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC133 SDRAM ADJ-203-562A (Z) 暫定仕様 Rev.0.1 ’00. 10. 6 概要 HB 52 RF12 89 E2 U は，8 バイト DIMM（Du al In-l in e Memory Mo du le）で 8 バイト CPU のメインメモリと
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HB52RF1289E2U-75B
128-Mword
72-bit,
PC133
ADJ-203-562A
Hitachi DSA00190
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MIG toshiba
Abstract: ABB B45 THMR1E16-6 THMR1E16-7 B75 ABB hiab 837 B34 toshiba mig
Text: TOSHIBA THMR1E16-6/-7/-8 TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 18-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E16 is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB and 8 TC59M718RB Direct Rambus DRAMs on a printed circuit board.
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THMR1E16-6/-7/-8
128M-word
600MHz
711MHz
800MHz
16cydes)
-16CSP
MIG toshiba
ABB B45
THMR1E16-6
THMR1E16-7
B75 ABB
hiab
837 B34
toshiba mig
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Untitled
Abstract: No abstract text available
Text: Advance Product Information s d h / s o n e t 2.5Gbits/sec VSC7926 Laser Diode Driver Features • Rise Times Less Than lOOps Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data Direct Access to Modulation and Bias FE T’s • Differential Inputs
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VSC7926
VSC7926
G52188-0,
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125C42
Abstract: No abstract text available
Text: SEMICONDUCTOR CORPORATION Advance Product Information s d h /s o n e t VSC7924 z.sGb/s Laser Diode Driver Features • Rise Times Less Than lOOps • High Speed Operation Up to 2.5Gb/s NRZ Data • Single Power Supply * Direct Access to Modulation and Bias FET’s
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VSC7924
VSC7924
G52156-0,
125C42
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64H40
Abstract: circuit of rowa television CM05
Text: TOSHIBA TH M R2 N8Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 16-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N8Z is a 134,217,728-word by 16-bit direct rambus dynamic RAM module consisting of 8 TC59RM816MB Direct Rambus DRAMs on a printed circuit board.
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728-WORD
16-BIT
16-bit
TC59RM816MB
128M-word
600MHz
128M-wordX16
711MHz
64H40
circuit of rowa television
CM05
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Direct-Rambus-RIMM
Abstract: MC-4R256CEE6B MC-4R256CEE6C uPD488448
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256CEE6B, 4R256CEE6C Direct Rambus DRAM RIMM™ Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module Is a general purpose high-performance memory module subsystem suitable for
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MC-4R256CEE6B,
4R256CEE6C
256M-BYTE
128M-WORD
16-BIT)
4R256CEE6C
uPD488448
600MHz,
800MHz
Direct-Rambus-RIMM
MC-4R256CEE6B
MC-4R256CEE6C
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR CORPORATION s d h / s o n e t 2.5Gb/s Target Specification VSC7927 Laser Diode Driver Features • Rise Times Less Than lOOps • Direct Access to Modulation and Bias FET’s • High Speed Operation Up to 2.5 Gb/s NRZ Data • Data Density Monitors
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VSC7927
VSC7927
G52201
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