128X8 CMOS RAM Search Results

Contextual Info: PIC16CE62X OTP 8-Bit CMOS MCU with EEPROM Data Memory Devices included in this data sheet: Pin Diagrams • PIC16CE623 • PIC16CE624 • PIC16CE625 PDIP, SOIC, Windowed CERDIP Program Memory RAM Data Memory EEPROM Data Memory PIC16CE623 512x14 96x8 128x8

ST93C46AB1

Contextual Info: SCS-THOMSON ST93C46A ILI 1 KBITS 64x16or 128x8 SERIAL ACCESS CMOS EEPROM MEMORY PRELIM INARY DATA HIGHLY INCREASED RELIABILITY OF CMOS EEPROM TECHNOLOGY. OVER 1 MILLION ERASE/WRITE CYCLES. OVER 10 YEARS DATA RETENTION. 64 X 16 OR 128 X 8 MEMORY FORMAT USER

intel 8052

Abstract: IC89C52 80C52 IC89C52A
Contextual Info: IC89C52 51 A CMOS SINGLE CHIP 8-BIT MICROCONTROLLER with 8(4)-Kbytes of FLASH FEATURES GENERAL DESCRIPTION • 80C52(51) based architecture • 8(4)-Kbytes Flash memory with fast-pulse programming algorithm and software protection • 256 x 8 RAM (128x8 RAM)

24C028

Abstract: csi 24c02 CAT25C04 AEC-Q100 CAT25C01 CAT25C02 3bp1a
Contextual Info: CAT25C01, CAT25C02, CAT25C04 1K/2K/4K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C01/02/04 is a 1K/2K/4K Bit SPI Serial CMOS EEPROM internally organized as 128x8/256x8/ 512x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The

Contextual Info: PENSE-PAC 1 Megabit CMOS SRAM DPS128M8n3/DPS 128X8 A3 MICROSYSTEMS DESCRIPTION: The DPS128M8nY & DPS128X8A3 SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded,

IC89C52

Abstract: intel 8052 MC008 MC-008
Contextual Info: IC89C52 51 A CMOS SINGLE CHIP 8-BIT MICROCONTROLLER with 8(4)-Kbytes of FLASH FEATURES GENERAL DESCRIPTION • 80C52(51) based architecture • 8(4)-Kbytes Flash memory with fast-pulse programming algorithm and software protection • 256 x 8 RAM (128x8 RAM)

Contextual Info: ISSI IS89C51_ CMOS SINGLE CHIP 8-BIT MICROCONTROLLER with 4-Kbytes of FLASH FEATURES • 80C51 based architecture • 4-Kbytes of on-chip Reprogrammable Flash Memory • 128x8 RAM • Two 16-bit Timer/Counters • Full duplex serial channel • Boolean processor

Contextual Info: U B I Preliminary Information X24C01 1K 128x8 Bit Serial E2PROM FEATURES DESCRIPTION * 3V to 5.5V Power Supply * Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 pA * Internally Organized 128 x 8 * 2 Wire Serial Interface —Bidirectional Data Transfer Protocol

16kx8 ram

Abstract: 8096 microcontroller features rom 1024 1024x8 MSM6411B 8096 microcontroller serial ports MSC62408 MSC6458 NS400N seg lcd driver rom 512x4
Contextual Info: • LINE-UP AND TYPICAL CHARACTERISTICS •- LINE-UP AND TYPICAL CHARACTERISTICS LOW POWER HIGH SPEED OLMS-50/60 SERIES PRODUCT NAME ROM OLMS-64/65 SERIES RAM POWER CONSUMP­ TION FEATURES RAM ROM MACHINE CYCLE FEATURES MSM6404 4000 x 8 256x4 952 nS I/O: 36

PD650C

Abstract: PD80C49C PD7801G UPD650C 64x8 PD650 uCOM84 MPD7801G UPD80C48C PD7800G
Contextual Info: • 4-Bit Single-Chip M icrocom puters Process Supply Voltage V Instruction Time ROM x8 RAM I/O CMOS +5 10 2k 1k 9 6 x4 6 4 x4 4 bit X 8 3 bit 42-pin DIP /(PD652C 1k 3 2 x4 4 bit X 5 1 bit 28-pin DIP /íPD7502G ííPD7503G 2k •4k 128x4 224 x 4 4 bit X 5

MK48T87B24

Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Contextual Info: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W

Contextual Info: 'F 'f Z - H f niET EC A L C A TE L 45E D • fc>15ñb51 GOOOGlfl T ■ MTEC 1.5 1 CMOS Standard Cell Library MTC-800 Services Features • Silicon-Gate 1.5 Micron CMOS Technology • Fully supported by MADE • Extensive M acrocell Library • ROMs, RAMs and other

intel 8039

Abstract: TMP80C40AP TLCS48 TMP80C50AP
Contextual Info: 8-BIT MICROCONTROLLERS TLCS-48 Series CMOS/NMOS FEATURES • Memory • Additional Functions (1) Max. 4K byte ROM and 256 byte RAM (4) 8-bit interval timer/event counter • Processor (2) Software and pin compatible with Intel’s 8048 series (3) 96/97 instructions, min. 2.5/1.36

TMP8035P

Abstract: I8039 intel 8048 processor 8048 intel 8035 P80C49 TMP8035AP TMP8035PI TMP8039AP TMP8039PI-6
Contextual Info: 8-BIT MICROCONTROLLERS TLCS-48 Series CMOS/NMOS FEATURES • Memory • Additional Functions (1) Max. 4K byte ROM and 2 5 6 byte RAM (4) 8-bit interval timer/event counter • Processor (2) Software and pin compatible with Intel’s 8 0 4 8 series (3) 9 6 /9 7 instructions, min. 2 .5/1.3 6 jxs at 6/11 M H zocs.

TLCS-48

Abstract: intel 8039 40 PIN DIP tmp8039
Contextual Info: 8-BIT MICROCONTROLLERS TLCS-48 Series CMOS/NMOS FEATURES • Memory • Additional Functions (1) Max. 4K byte ROM and 2 5 6 byte RAM (4) 8-bit interval timer/event counter • Processor (2) Software and pin compatible with Intel’s 8 0 4 8 series (3) 9 6 /9 7 instructions, min. 2 .5/1.3 6 jxs at 6/11 M H zocs.

PIC16CE623

Abstract: PIC16CE624 PIC16CE625 PIC16CE62X 128x8 cmos ram 1KX14
Contextual Info: PIC16CE623/24/25 OTP 8-Bit CMOS MCU with EEPROM Data Memory High Performance RISC CPU: ● Only 35 instructions to learn ● All single-cycle instructions 200 ns , except for program branches which are two-cycle ● Operating speed: - DC - 20 MHz clock input

UPD650C

Abstract: UPD7503G PD7800G 8049C 224X4 MPD7802G mPD8253 PD7811G upd652c UPD650
Contextual Info: N E C E L E C T R O N I C S INC STC D • b427525 000bl04 7 ■ • 4-Bit Sing le-C hip M icro co m p u ters i Type No. Process Supply Voltage V Instruction Time (¡is) ROM x8 2k CMOS +5 10 1k 64x4 1k /{PD650C /(COM43C Series /(PD651C /íPD652C /í PD7502G

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

TMC17C

Abstract: 100-QFP 92-QFP TMC17A
Contextual Info: EPROM for Flat Piggyback Type T4773 Structure Max. Access Time ns 32768 x 8 250 Max. Power Dissipation (mA) Active I Stand-by 30 0.1 Write Voltage (V) Supply Voltage (V)

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

LC3516AL-10

Abstract: LC3516A-10
Contextual Info: SANYO SEMICONDUCTOR - 3 B E C ORP D • 7 q ^ 7 Q 7b □□ 054 53 1 H9 CMOS DYNAMIC RAM Capacity Access Tim e Organization Words X Bits 1MX1 1M 256KX4 Type N o . T rac ns max L C 3 2 1 0 0 0 -1 0 /1 2 L C 3 2 1 0 0 0 J -1 0 /1 2 L C 3 2 10O O Z-1 0 /1 2

BSY76

Contextual Info: & 59C11 Microchip IK 128 x 8 or 64 x 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • Low power CMOS technology • Pin selectable memory organization — 128 x 8 or 64 x 16 bit organization • Single 5 volt only operation • Self timed WRITE, ERAL and WRAL cycles

HT66F004

Abstract: HT48R002 HT66F002 HT16K33 HT46R002 HT12F application circuit HT66F018 HT46R004 HT46R0042 HT46R066B
Contextual Info: Holtek Company Introduction Introduction Unrelenting growth and the release of a continuous stream of competitive and functionally rich new semiconductor devices onto the global market has been the hallmark of Holtek Semiconductor since the establishment of the company back in 1983 to the present

TS93C46

Abstract: TS93C46CP TS93C46VP
Contextual Info: r Z J SGS THO M SO N TS93C46 1K BIT SERIAL CMOS EEPROM • HIGHLY RELIABLE CMOS FLOATING GATE TECHNOLOGY. ■ SINGLE 5-VOLT SUPPLY ■ EIGHT PIN PACKAGE. ■ 6 4 x 1 6 OR 1 2 8 x 8 USER SELECTABLE SERIAL MEMORY ■ COMPATIBLE WITH NATIONAL SEMICONDUCTOR NMC 9346 and NMC 9306