S0J26 Search Results

LC3516AL-10

Abstract: LC3516A-10
Contextual Info: SANYO SEMICONDUCTOR - 3 B E C ORP D • 7 q ^ 7 Q 7b □□ 054 53 1 H9 CMOS DYNAMIC RAM Capacity Access Tim e Organization Words X Bits 1MX1 1M 256KX4 Type N o . T rac ns max L C 3 2 1 0 0 0 -1 0 /1 2 L C 3 2 1 0 0 0 J -1 0 /1 2 L C 3 2 10O O Z-1 0 /1 2

bq785

Abstract: 20-P-300-1 MSM514100DL ZIP20-P-400-1 msm514100d
Contextual Info: O K I Semiconductor MSM5141 OOP/PL_ E2G0022-17-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and

MSM6685

Abstract: MSM6685JS
Contextual Info: O K I Semiconductor MSM6685 8,388,608-Word x 1-Bit Serial Register GENERAL DESCRIPTION The MSM6685 is a serial register composed of 8,388,608 words x one bit, characterized by mediumspeed, low power consumption operation. This device has a built-in internal address generation circuit. Triggered off by a single external clock

MSM5117405

Abstract: MSM5117405B
Contextual Info: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power

MSM511000

Abstract: ZIP20-P-400 dip26
Contextual Info: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

MSM511000

Abstract: ZIP20-P-400 msm511000h
Contextual Info: O K I Semiconductor MSM5 1 1 0 0 0 H_ _ 1,048,576-W ord x 1-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E D ESCRIPTIO N The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power

MSM66V84B

Abstract: MSM66V84BJS MSM66V84BTS-K
Contextual Info: O K I Semiconductor MSM66V84B 4,194,304-word x 1-bit Serial Register GENERAL DESCRIPTION MSM66V84B is a serial register organized as 4,194,304 words x one bit, characterized by medium­ speed, low power consumption operation. This device has a built-in internal address generation circuit allowing continuous serial read / write

T02I

Abstract: 26-PIN ZIP20-P-400 514100B
Contextual Info: O K I Semiconductor MSM5 1 4 1 OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: 1,048,576 W O R D X 4 BIT D YN A M IC RAM * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514410AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: TENTATIVE DATA 262,144 W O R D x 4 BIT D YN AM IC RAM DESCRIPTION The TC514266AP/AJ/AZ is the new generation dynam ic R A M organized 262,144 words b y 4 bits. The TC514266AP/AJ/AZ utilizes T O S H IB A ’S C M O S Silicon gate process technology as w e ll as advanced

Contextual Info: PRELIMINARY 1,048,576 W ORD x 4 BIT DYN AM IC RAM DESCRIPTION T he T C 514410A P /A J/A SJ/A Z is the n e w g en e ra tio n dyn am ic R A M organized 1 ,0 4 8 ,5 7 6 words by 4 bits. T he T C 514410A P /A J/A SJ/A Z u tiliz es T O S H IB A ’S CM OS S ilico n gate process tech n ology as w e ll as

Contextual Info: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The

a10u

Abstract: B724e
Contextual Info: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.

OF100

Abstract: MSM514256 MSM514256CL ZIP20-P-400 msm514256c
Contextual Info: O K I Sem iconductor MSIVI514256C /C L_ 262,144-W ord x 4-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514256C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514256C/CL is

MSM514400C/CL-60

Contextual Info: O K I Semiconductor MSM514400C/CL_ 1,048,576-W ord x 4-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM514400C/CL is a 1,048,576-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514400C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514400C/CL is

Contextual Info: O K I Semiconductor MSM5 14402A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : STA TIC COLUM N MODE TYPE DESCRIPTION The MSM514402A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514402A/AL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM5 116 4 0 0 B_ E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM514256B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144-word x 4-bit. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1V4400/SL_ 1,048,576-Word x 4-Bit DYNAMIC RAM: FAST PAGE MODE TYPE D ESC R IP T IO N The MSM51V4400/SL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit configuration. The technology used to fabricate the MSM51V4400/SL is OKI's CMOS silicon gate

Contextual Info: O K I Semiconductor MSM5 14400A/AL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400A/AL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM511002B 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The

m514400c

Abstract: 514400C
Contextual Info: O K I Semiconductor MSM514400C/CL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400C/CL is a 1,048,576-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514400C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514400C/CL is