12C2 Search Results

midtex relay 258

Abstract: midtex relay 258-12C200 midtex relays 25812C200
Contextual Info: Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home English | ••• Sunday, 23 October, 2005 Relays Industrial Relays General Purpose CATALOG ● 258-12C200 Cross Reference Search for Parts Competitive Products

12C2F-A

Abstract: jedec 12pin ssop
Contextual Info: 12C2F-A Weight g 0.12 Lead Material Cu Alloy 12 7 1 6 L1 E HE JEDEC Code – e b c D Symbol A EIAJ Package Code – Plastic(Clear resin) 12pin 300mil SSOP A b c D E e HE L1 Dimension in Millimeters Min Nom Max 1.6 1.4 1.5 0.30 0.35 0.45 0.13 0.15 0.2 4.8

Contextual Info: METAL OXIDE VARISTORS TNRTM RoHS Compliant Chip Type for Direct Surface Mounting 5C and 7C Type Operating Temperature Range: -40 to +125C Storage Temperature Range: -50 to +150C ?STANDARD RATINGS (Type 5C, 7C) Maximum Ratings Part Number Previous Part Number

Contextual Info: METAL OXIDE VARISTORS TNRTM RoHS Compliant Chip Type for Direct Surface Mounting 5C and 7C Type Operating Temperature Range: -40 to +125C Storage Temperature Range: -50 to +150C ?STANDARD RATINGS (Type 5C, 7C) Maximum Ratings Part Number Previous Part Number

Contextual Info: LM 49360 LM49360 Mono Class D Audio C odec PMU with Ground Referenced Headphone Am plifiers, Earpiece Driver, Audio DSP, 2 Step-Down DC-DC Converters, and 7 LDO Regulators T ex a s In s t r u m e n t s Literature Number: SN AS501A r/i T e xa s In s t r u m e n t s

T44E

Abstract: "RF Power Amplifiers" 2SC4624 N15W z3 transistor transistor z3 RF NPN POWER TRANSISTOR 3 GHZ 5w
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE D ESC R IPTIO N 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEA TU R ES • High power gain : Goe S 4.7dB, Po S 45W

MKY54C348

Abstract: MKY-76C348 76CF MKY-54C348 MKY-54C46 Silicon Sensors, Inc MPY-54C679 MPY-76C59 MKY-5C38E MKY-5C46
Contextual Info: ndS«CdSe PH O TO C O N D U C T IV E C E L L S SILICON SENSORS INC ' 1 75 43C SERIES m T M ö 2 S 3 c]22 0 0 0 0 3 3 3 2 | "4C 0.3 1 .3 lOLux KQ 50 SERIES 4 .3 u n it : mm MIN(MQ) 25t (m i) V / - 4V 10 Lux(KQ) DC( V) u n it : mm 0.3 z .o MIN(M Q) 25t(mw)

Q13MC146

Abstract: q33310f7 Q24FA20h TCO-7107X1A4 Q22FA23V EV-9100JG TCO-7087D1A1 TSX-3225 EPSON FC12M 770sc
Contextual Info: Crystal unit Epson Toyocom Product Number please contact us FC-13F : Q13FC13F0xxxx00 FC-135 : Q1xFC1350xxxx00 kHz RANGE CRYSTAL UNIT LOW PROFILE SMD FC - 13F / FC - 135 •Frequency range : External dimensions : : Overtone order : Applications :

NFC 63210

Abstract: fuse 32A 10x38 siemens siemens diazed gg vde 0636 iec 269 22x58 fuse fuse 1.25 A 10x38 500V 63210 neozed 100 microfarad 20v capacitor 22X58
Contextual Info: NEXT FIND IT TABLE OF CONTENTS MINIATURE DIAZED Mini fuses in five sizes to 20 Amps. • Slow Blow • Medium Blow Click for PDF file • Fast Blow • Super Fast Blow NEOZED CYLINDER NH "Bottle" fuses in five sizes to 200 Compact fuses in three sizes to Standard cylinder fuses are

Contextual Info: Features Datasheet RX64M Group Renesas MCUs R01DS0173EJ0100 Rev.1.00 Jul 31, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC, full-speed USB 2.0 with battery charging, SD host interface optional , quad SPI, and CAN, 12-bit A/D

IRFIBC30G

Contextual Info: I 4Ô55452 0015244 b07 « I N R International i»R Rectifier IRFIBC30G INTERNATIONAL RECTIFIER HEXFET Pow er M O S F E T • • • • • PD-9.851 Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: SURFACE M OUNT and PLUG-IN TYPICAL CHARACTERISTICSTest co n d itio n s: 25°C ambient and input voltage at O utput voltage to lera n ce a t fu ll loa d : 5V models ± 0.25V 9V models * 0.3V 12V & 15V models ± 0.4V 24V & 28V models * 0.5V 48V models ± 0.7V

Contextual Info: MODELS M, C, F,T, B NTC Thermistors Coated FEATURES • Small size - conformal coated • Wide resistance range • Available in 11 different R-T curves • Configured for standard P.C. board mounting or assembly in probes STANDARD ELECTRICAL SPECIFICATIONS and DIMENSIONAL CONFIGURATIONS

432W6

Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P

mitsubishi split ac

Abstract: CSR BC4 CSR BC5 M306V7FGFP rsc 258 block 106416 RC21 SERIES LOGO TD Display 022F16 BC3 csr
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

6A4 mic DIODE

Abstract: r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF XW6800 R8202 R6803 C8207
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 04 426972 ENGINEERING RELEASED DATE

BA41-00727A

Abstract: LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus
Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO 2 g n l u a s i t m

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

smd diode c539

Abstract: samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button
Contextual Info: 5 Schematic Diagrams and PCB Silkscreen 5-1-5 Parts List SEC Code Location Description and Specification J504 J503 J502 PCMCIA SOCKET J514 J521 J506 J500 3701-001026 3701-001035 3701-001036 3709-001119 3710-000253 3711-003392 3711-003987 3722-000218 15P,2R,FEMALE,SMD-S,AUF

SLB9635TT12

Abstract: SLB9635TT1.2 32 inch TV samsung lcd Schematic fairchild diode smd code aa35 SC454 slb9635 BA41-00905A 20B3 diode BA09-00009A B503 F
Contextual Info: SENS X360 A B C D 4 SAMSUNG PROPRIETARY 3 4 HJ KIM Jun PARK T.R. Date 3 JS EUH APPROVAL : Dev. Step Revision CHECK BA41-00906A GCE : PR/MP : 1.1 DRAW Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page.

oz960

Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO

sil1162

Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM

ISL9504

Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS