12N120 Search Results

12n120

Contextual Info: Advance Technical Information MegaMOSTMFET VDSS = 1200 V ID cont = 12 A RDS(on)= 1.3 Ω IXTH 12N120 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous

Contextual Info: IGBT Optimized for IXGA 12N120A2 IXGP 12N120A2 VCES = 1200 V IC25 = 24 A VCE sat = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES

12n120

Abstract: UPS SIEMENS
Contextual Info: VDSS ID cont RDS(on) trr IXFH 12N120 High Voltage HiPerFET Power MOSFET = 1200 V = 12 A = 1.4 Ω ≤ 300 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS

12n120

Abstract: TO247AE
Contextual Info: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage

Contextual Info: IXTH 12N120 Power MOSFET, Avalanche Rated High Voltage VDSS = 1200 V ID cont = 12 A RDS(on)= 1.4 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous

12n120

Abstract: UPS SIEMENS IXTH12N120
Contextual Info: VDSS = 1200 V ID cont = 12 A RDS(on)= 1.4 Ω IXTH 12N120 Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous

Contextual Info: MOTOROLA Order this document by 12N120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGW 12N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

Contextual Info: IXFH 12N120 High Voltage HiPerFET Power MOSFET VDSS ID cont RDS(on) trr = 1200 V = 12 A = 1.4 Ω ≤ 300 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS

vq 123

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information Insulated Gate Bipolar Transistor MGW 12N120E N-Channel Enhancement-Mode Silicon Gate This Insulated Sate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

IXTH 12N120

Abstract: 12n120 123B16
Contextual Info: Advance Technical Information VDSS = 1200 V ID cont = 12 A RDS(on)= 1.3 Ω IXTH 12N120 Power MOSFET, Avalanche Rated High Voltage Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS

12N120D

Abstract: transistor d 1557
Contextual Info: MOTOROLA O rder this docum ent by MGW 12N120D/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGW 12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO-247 12 A @ 90 °C 20 A @ 25°C

12N120A2

Abstract: 12n120 IXGA12N120A2 ixga12n12 ixgp12n120
Contextual Info: IGBT Optimized for IXGA 12N120A2 IXGP 12N120A2 VCES = 1200 V = 24 A IC25 VCE sat = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES

Contextual Info: 12N120K5, 12N120K5 N-channel 1200 V, 0.58 Ω typ., 12 A Zener-protected SuperMESH 5 Power MOSFETs in TO-220FP and TO-3PF Datasheet - preliminary data Features Order codes VDS RDS on max. ID 1200 V 0.69 Ω 12 A 12N120K5 3 3 2 2 1 1 TO-220FP 40 W

UL1007 AWG18

Abstract: DSAAXSA0008960.txt 05N120
Contextual Info: GT-2066 SERIES-65W ISO 9001:2008 REGISTERED 0-65 Watts, 3"X5" Open Frame, Universal Input, Dual and Triple Output Family, ITE Medical Versions See Page 141 INDOOR USE ONLY ELECTRICAL SPECIFICATIONS: INPUT VOLTAGE: UNIVERSAL INPUT FROM 100VAC TO 240VAC INPUT CURRENT:

Contextual Info: GT-2066 SERIES-80W ISO 9001:2008 REGISTERED 0-80 Watts, 3"X5" Open Frame, Universal Input, Dual and Triple Output Family, ITE Medical Versions See Page 135 INDOOR USE ONLY ELECTRICAL SPECIFICATIONS: INPUT VOLTAGE: UNIVERSAL INPUT FROM 100VAC TO 240VAC INPUT CURRENT:

12N120K5

Abstract: STB12N120K5 w12n120
Contextual Info: 12N120K5, 12N120K5 12N120K5, 12N120K5 N-channel 1200 V, 0.58 Ω, 12 A D²PAK, TO-3PF, TO-220, TO-247 Zener-protected SuperMESH 5 Power MOSFET Preliminary data Features TAB Order codes VDSS RDS on max. ID 1 PW 2 3 3 1 12N120K5 250 W 12N120K5

Contextual Info: 12N120K5-2, 12N120K5, 12N120K5, 12N120K5 N-channel 1200 V, 0.58 Ω typ.,12 A Zener-protected SuperMESH 5 Power MOSFETs in H2PAK-2, TO-220 and TO-247 Datasheet - preliminary data Features TAB TAB Order codes VDS RDS on max. 1200 V 0.69 Ω 2

1200 volt mosfet

Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

Contextual Info: MOTOROLA Order this document by 12N120E/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information 12N120E In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced

transistor tic 106 N

Abstract: bly power transistor transistor tic 226 transistor SE 431
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA D e sig n e r’s Data Sheet M GW 1 2 N 1 2 0 D Insulated G ate Bipolar Transistor with Anti-Parallel Diode Motorola Prafarrad Davlca N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -247 12 A @ 90 C 20 A @ 25 C

molex 5533

Contextual Info: GTM2066 SERIES-80W 0-80 Watts, 3"X5" Open Frame, Universal Input, Dual and Triple Output Family, Medical ISO 9001:2008 REGISTERED INDOOR USE ONLY ELECTRICAL SPECIFICATIONS: INPUT VOLTAGE: UNIVERSAL INPUT FROM 100VAC TO 240VAC INPUT CURRENT: 1.5A@65W MAXIMUM AT 100VAC FULL LOAD

w12n120

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M G W 12N 120 Insulated G ate Bipolar Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his In su la ted G a te B ip o la r T ra n sisto r IG B T uses an a dva n ce d

12N120K5

Abstract: STH12N120K5-2 12N120 stp12n120k5 stp12n120k STH12 STW12N120K5
Contextual Info: 12N120K5, 12N120K5-2, 12N120K5, 12N120K5 N-channel 1200 V, 0.58 Ω typ., 12 A, Zener-protected SuperMESH 5 Power MOSFET in TO-3PF, H2PAK-2, TO-220 and TO-247 packages Datasheet − preliminary data Features TAB Order codes VDS RDS on max.