130NM CMOS POWER Search Results

130NM CMOS POWER Result Highlights (5)

Part	Manufacturer	Description
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31
TPD4164K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30
TPD4163F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31
TPD4207F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)

130NM CMOS POWER Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
130nm CMOS Abstract: 130nm tsmc cmos model 130-nm tsmc cmos TSMC IO Text: Data sheet IO ESD protection Low capacitive IO protection for TSMC 130nm CMOS technology Sofics has verified its TakeCharge ESD protection clamps on TSMC 130nm CMOS technology. The devices are product proven in several hundreds mass produced 130nm products. The cells provide competitive advantage	Original	PDF	130nm 130nm B-9880 130nm CMOS tsmc cmos model 130-nm tsmc cmos TSMC IO
130nm CMOS Abstract: tsmc cmos model tsmc cmos silicon footprint ESD Text: Data sheet IO ESD protection Low capacitive IO protection for TSMC 130nm CMOS technology Sofics has verified its TakeCharge ESD protection clamps on TSMC 130nm CMOS technology. The devices are product proven in several hundreds mass produced 130nm products. The cells provide competitive advantage	Original	PDF	130nm 130nm B-9880 130nm CMOS tsmc cmos model tsmc cmos silicon footprint ESD
Infineon Tricore TC1797 Abstract: TC1797 TC1767 BOSCH ME 7.4.6 TC1796B bosch sm ac drive FSP7 Capacitors SME type P2p smd TC1766 Text: Application Note, V1.1, September 2006 AP32111 Scalable Pads Electrical Specification of Scalable Output Drivers in 130nm CMOS Technology Valid for Microcontrollers: TC1766, TC1767, TC1796, TC1797 Microcontrollers Never stop thinking. AP32111 Scalable Output Drivers Audo-NG and Audo-Future	Original	PDF	AP32111 130nm TC1766, TC1767, TC1796, TC1797 Infineon Tricore TC1797 TC1797 TC1767 BOSCH ME 7.4.6 TC1796B bosch sm ac drive FSP7 Capacitors SME type P2p smd TC1766
nfc chip Abstract: nxp nfc SLE88CFX4000P 88CNFX6600PM 88CNFX5400PM SLE88CFX2921P mais 88CFX4002P 184-kByte SLE88CFX4001P Text: SLE 88 family: High End 32-bit Security Controller - Infineon Technologies Page 1 of 4 Home > Chip Card & Security > Chip Card Controllers > SLE 88 family: High End 32-bit Security Controller SLE 88 family: High End 32-bit Security Controller The SLE 88 products family is the Infineon’s state of the art 32-bit platform, designed in 130nm CMOS technology, with:	Original	PDF	32-bit 130nm 88CNFX5400PM 88CNFX6600P 88CNFX6600PM nfc chip nxp nfc SLE88CFX4000P SLE88CFX2921P mais 88CFX4002P 184-kByte SLE88CFX4001P
180NM nmos Abstract: Pmos transistor 180nm CMOS transistor 180NM n 410 transistor 180-nm Text: 100 nm Gate Length High Performance / Low Power CMOS Transistor Structure T. Ghani, S. Ahmed, P. Aminzadeh*, J. Bielefeld, P. Charvat, C. Chu, M. Harper, P. Jacob, C. Jan, J. Kavalieros, C. Kenyon, R. Nagisetty, P. Packan# , J. Sebastian, M. Taylor, J. Tsai, S. Tyagi, S. Yang , M. Bohr	Original	PDF	100nm 180nm 180NM nmos Pmos transistor 180nm CMOS transistor n 410 transistor 180-nm
130nm CMOS Abstract: ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR Text: High-quality imaging for small format applications Foundry technologies 130-nm/180-nm CMOS image sensor CIMG7HY IBM Global Engineering Solutions offers Highlights a leading-edge CMOS image sensor CIMG technology based on IBM’s Standard features: Optional features:	Original	PDF	130-nm/180-nm 130-nm 180-nm TGD03007-USEN-02 130nm CMOS ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR
130NM cmos process parameters Abstract: 90 nm CMOS C6416 TMS320C6000 TMS320C6416 90nm cmos cmos logic 90nm nmos 130nm Text: Chasing Moore’s Law with 90-nm: More Than Just a Process Shrink By Ray Simar, Manager of Advanced DSP Architecture In the electronics industry, the term “process shrink” is often used to refer to when a semiconductor company migrates an existing design to a smaller process technology.	Original	PDF	90-nm: 720-MHz TMS320C6416 C6416 130-nm 90-nm 130NM cmos process parameters 90 nm CMOS TMS320C6000 90nm cmos cmos logic 90nm nmos 130nm
FM22L16 Abstract: TULSA 130-nanometer RAMTRON Texas Memory Systems 130nm CMOS power Text: Ramtron claims industry first with 4Mb nonvolatile FRAM chip, Small . . Print this article Close Ramtron claims industry first with 4Mb nonvolatile FRAM chip Mar. 14, 2007 - Ramtron International Corp., Colorado Springs, CO, has launched what it calls the semiconductor industry's	Original	PDF	FM22L16. FM22L16 44-pin 130nm TULSA 130-nanometer RAMTRON Texas Memory Systems 130nm CMOS power
BCD6 Abstract: TM 1628 IC hf7cmos CMOS65 STW4410 65um dice project Text: Portable mixed-signal solutions EDA tools • Comprehensive offer of EDA design tools for analog and mixed-signal design and package module integration, integrated in CadenceTM and Mentor designTM frameworks ■ Multi Project Wafer services ■ Complete SiP platform to provide a full design	Original	PDF	MIM10 CMOS65 FOLDERMOB0207 BCD6 TM 1628 IC hf7cmos CMOS65 STW4410 65um dice project
tsmc 130nm metal process Abstract: teradyne tiger aeroflex sram edac charactristics of cmos logic gates CCGA 472 leon3 teradyne flex tester CCGA 472 drawing 130NM cmos process parameters tsmc cmos Text: Semicustom Products UT130nHBD Hardened-by-Design HBD Standard Cell Advanced Data Sheet August 2010 www.aeroflex.com/RadHardASIC FEATURES PRODUCT DESCRIPTION Up to 15,000,000 usable equivalent gates using standard cell architecture The high-performance UT130n HBD Hardened-by-Design	Original	PDF	UT130nHBD 130nm 0x10-10 tsmc 130nm metal process teradyne tiger aeroflex sram edac charactristics of cmos logic gates CCGA 472 leon3 teradyne flex tester CCGA 472 drawing 130NM cmos process parameters tsmc cmos
180-nm CMOS standard cell library inverter Abstract: 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130nm 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201 Text: Fujitsu @ 65nm: Providing Solutions through Integrated Design Services The Fujitsu Advantage…Not Just a Foundry Contents Benefits of leading-edge technology at 65nm Challenges Solutions Fujitsu Microelectronics America, Inc. 2 FSA Semiconductor Forum, June 14, 2006	Original	PDF	130nm 180-nm CMOS standard cell library inverter 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201
SPIF225A Abstract: 88f5181 MARVELL 88f5181 SIL5723 Sil3726 atp8620 Sil4726 88SM4140 SIL4723 spif-225 Text: New Product Introduction XRS10L140/120/240/220 XRS10L140/120 SATA Port Multipliers & XRS10L240/220 SATA Combo Chips Confidential Information For Authorized EXAR Representatives Only SATA Port Multiplier & Combo Products Rev1.0 1 New Product Introduction XRS10L140/120/240/220	Original	PDF	XRS10L140/120/240/220 XRS10L140/120 XRS10L240/220 XRS10L140 XRS10L120 10L140IV 10L240IV SPIF225A 88f5181 MARVELL 88f5181 SIL5723 Sil3726 atp8620 Sil4726 88SM4140 SIL4723 spif-225
SPARC64 Abstract: 180NM 400M GS21 sparc64 gp Text: SPARC64 VII Fujitsu’s Next Generation Quad-Core Processor August 26, 2008 Takumi Maruyama LSI Development Division Next Generation Technical Computing Unit Fujitsu Limited All Rights Reserved,Copyright FUJITSU LIMITED 2008 Fujitsu Processor Development	Original	PDF	SPARC64TM 130nm 180nm 150nm SPARC64 180nm GS8800B SPARC64 400M GS21 sparc64 gp
180NM Abstract: 180-nm 180NM mos 100nM 90 nm CMOS 180nm be Text: Scaling Challenges and Device Design Requirements for High Performance Sub-50nm Gate Length Planar CMOS Transistors T. Ghani, K. Mistry, P. Packan#, S. Thompson, M. Stettler#, S. Tyagi, M. Bohr Portland Technology Development, #TCAD Intel Corporation 2000 VLSI Symposium	Original	PDF	Sub-50nm 180nm 100nm 15-20nm 100nm 180-nm 180NM mos 90 nm CMOS 180nm be

CORE i3 ARCHITECTURE Abstract: CORE i3 instruction set SPARC64 core i7 registers SPARC64TM 220nm Fujitsu SparC64 instruction set sparc64viiifx core i7 alu fujitsu GS21 Text: SPARC64 VIIIfx: Fujitsu’s New Generation Octo Core Processor for PETA Scale computing August 25, 2009 Takumi Maruyama LSI Development Division Next Generation Technical Computing Unit Fujitsu Limited All Rights Reserved,Copyright FUJITSU LIMITED 2009	Original	PDF	SPARC64TM SPARC64TM 130nm 180nm 150nm SPARC64 180nm CORE i3 ARCHITECTURE CORE i3 instruction set SPARC64 core i7 registers 220nm Fujitsu SparC64 instruction set sparc64viiifx core i7 alu fujitsu GS21
M1AGLE3000 Abstract: No abstract text available Text: v1.1 IGLOOe Low-Power Flash FPGAs with FlashFreeze Technology Features and Benefits Low Power • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation Low-Power Active FPGA Operation FlashFreeze Technology Enables Ultra-Low Power	Original	PDF	FG896. M1AGLE3000
voltage scaling Abstract: tsmc cmos TSMC embedded Flash TSMC Flash IP ARM11 ARM926 ARM926EJ-S LP5550 pm2006 powerwise interface Text: Low Power SoC Design Using Voltage Islands and Adaptive Voltage Scaling Gordon Mortensen Engineering Director, Advanced Power National Semiconductor 1 What Consumers Care About • Power Management importance increases with feature rich devices • Consumers care about	Original	PDF
QN132 Abstract: 1K x4 static ram FG144 VQ100 2114 1kx4 Text: P r o du c t B r i e f IGLOOTM Low Power Flash FPGAs with FlashFreezeTM Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 5 µW Power Consumption in FlashFreeze Mode 1.2 V or 1.5 V Core Voltage for Low Power	Original	PDF	51700082PB-5/5 QN132 1K x4 static ram FG144 VQ100 2114 1kx4
Untitled Abstract: No abstract text available Text: Advanced v0.6 IGLOO Low-Power Flash FPGAs with FlashFreeze Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation 5 µW Power Consumption in FlashFreeze Mode	Original	PDF	130-nm, 128exers AGL250
FM25V10 Abstract: 1E14 130nm CMOS fram i2c Text: Ramtron announces high-speed and power flexible 1-megabit serial F-RAM Page 1 of 2 Home \| Contact Market Overview Publications Technology Event Calendar VirtualPressRoom Market overview Careers RTOS Players & Products Look-up Ramtron announces high-speed and power flexible 1-megabit serial F-RAM	Original	PDF	RAM068 FM25V10 1E14 130nm CMOS fram i2c
Untitled Abstract: No abstract text available Text: v1.2 IGLOOe Low-Power Flash FPGAs with FlashFreeze Technology Features and Benefits Low Power • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation Low-Power Active FPGA Operation FlashFreeze Technology Enables Ultra-Low Power	Original	PDF
circuit diagram of smart home alarm system Abstract: wireless hart protocol msp430, digital filtering BlueCore 4 BlueCore 5 traffic light controller BlueCore 4 datasheet CMOS 45nm wireless transducer/sensor wireless hart Text: Making the Case for Plug & SenseSM Networks Mark Jakusovszky and David Kerwin Aeroflex Colorado Springs jakusovszky@aeroflex.com We Connect the REAL World to the Digital World Overview W Macro Trends W Classic Sensor Network Architecture W Plug & Sense Network Architecture	Original	PDF	130nm, circuit diagram of smart home alarm system wireless hart protocol msp430, digital filtering BlueCore 4 BlueCore 5 traffic light controller BlueCore 4 datasheet CMOS 45nm wireless transducer/sensor wireless hart
QN132 Abstract: No abstract text available Text: Advanced v0.7 IGLOO Low-Power Flash FPGAs with FlashFreeze Technology Features and Benefits Advanced I/O • • • • Low Power • • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation 5 µW Power Consumption in FlashFreeze Mode	Original	PDF	130-nm, 128exers AGL250 QN132
Untitled Abstract: No abstract text available Text: P r o du c t B r i e f IGLOOTMe Low Power Flash FPGAs with Flash*FreezeTM Technology Features and Benefits Low Power • • • • • 1.2 V or 1.5 V Core Voltage for Low Power Supports Single-Voltage System Operation Low Power Active Capability Enables Active FPGA	Original	PDF	130-nm, 51700083PB-2/5

130NM CMOS POWER Search Results

130NM CMOS POWER Result Highlights (5)

130NM CMOS POWER Datasheets Context Search

130nm CMOS

130nm CMOS

Infineon Tricore TC1797

nfc chip

180NM nmos

130nm CMOS

130NM cmos process parameters

FM22L16

BCD6

tsmc 130nm metal process

180-nm CMOS standard cell library inverter

SPIF225A

SPARC64

180NM

CORE i3 ARCHITECTURE

M1AGLE3000

voltage scaling

QN132

Untitled

FM25V10

Untitled

circuit diagram of smart home alarm system

QN132

Untitled