1450-1 ITT Search Results

SD-5421-2

Abstract: 5455-1 Sensor* spx SE-1450-4 sd 1450-1 34222 SE-2460-3 SE-5455-2 SE-5455-3 SPX2762
Contextual Info: LED's INFRARED R e v e rse O u tp u t Type pow er at P o (m W ) m in . SE SE SE SE 1450-1* 1450-2* 1450-3* 1450-4* S E 2460-1 S E 2460-2 S E 2460-3 Beam S p e c if ie d fo r w a r d c u r r e n t a n g le d ro p l F( m A ) (¿ (d e g re e s) V F( v o lt s )

IN5417

Abstract: CAPACITOR JL 1500 AF100
Contextual Info: M an A M P com pany Wireless Bipolar Power Transistor, 100W P 1450-1550 MHz H 1 5 1 6 -1 0 0 Features • • • • • D esigned fo r L inear A m plifier A pplications Class AB: -32 dBc Typ 3 rd IMD at 100 W atts PEP C o m m o n E m itter C o n fig u ratio n

pin diagram of IC 14511

Abstract: 2a152 rca 3001 transistor CA2S24 RCA Solid State S 565 CA1524 isolated converter using SG3524 2A1524 ca3524c CA3524
Contextual Info: GES0^DSTATNEG1_ 3875081 G E SOLID STATE Power Control Circuits Û7S Gû 1 □ DIM503 O I E 14503 1450 01E D ' - - - ~ r-5 fr-//-3 / CA1524, CA2524, CA3524 Regulating Pulse Width Modulator Features: • Com plete PWM p ow er con trol circuitry ■ Separate outputs for single-ended or push-pull operation

PG1434

Abstract: PG1444
Contextual Info: sts-? i H NPN Typ o H PG 1430 1 PG1431 1 PG 1432 I PG 1433 | PG1434 I PG 1435 1 PG 1436 | PG 1437 H PG 1438 H PG 1439 PG 1440 PG1441 PG 1442 | PG 1443 g PG 1444 i PG 1445 1 PG 1446 H PG1447 H PG 1448 PG 1449 PG 1450 P G 1451 PG 1452 PG 1453 if ïsS Î't” ss& T'y.EK.s

Contextual Info: vM fcC O H W an A M P com pany Linear Power Transistor, 40W 850 -1450 MHz PH0814-40 Features • • • • • • • • N PN S ilic o n M ic ro w a v e P o w e r T r a n s is to r C o m m o n E m itte r C o n fig u r a tio n B r o a d b a n d C la s s A B O p e r a tio n

t16c

Abstract: INS8250N ST16C1450
Contextual Info: STARTECH ST16C1450 ST16C1451 An 2 F EXflRCompany Printed December 17, 1996 UNIVERSAL ASYNCHRONOUS RECEIVER/TRANSMITTER DESCRIPTION ST16C1450 PLCC Package The S T16C 1450/51 is a universal asynchronous re­ ce ive r and transm itter. A program m able baud rate

ST16C1450

Contextual Info: ST16C1450 ST16C1451 STARTECH Printed March 21,1997 An J P EXflRCompany UNIVERSAL ASYNCHRONOUS RECEIVER/TRANSMITTER DESCRIPTION ST16C1450 PLCC Package The S T16C 1450/51 is a universal asynchronous re­ ce ive r and transm itter. A program m able baud rate

BA6415AFS

Abstract: ba6415 ba6k BA6439P BA6414FS BA6840AFS BA631 ba6812 BA6412 BA6309
Contextual Info: Motor driver DC motor driver F'art No. Supply voltage range V Maximum output current (mW ) CmA) Channel Output mode 6 -1 8 2200 800 FRB BA6206/F 4.5—15 7 0 0 /4 5 0 500 FRSB BA6209/N 6 -1 8 2200/1000 1600 800 700 FRSB BA6109 4 .5 - 1 5 BA6218 TSD Stand-by mode

ST16C1450

Abstract: 16C1450 NCD223 73M1550 ST16C1450CJ28 ST16C1450CQ48 ST16C1450IJ28 ST16C450 IOR 421
Contextual Info: ST16C1450 xr 2.97V TO 5.5V UART AUGUST 2005 REV. 4.2.1 GENERAL DESCRIPTION FEATURES The ST16C1450 is a universal asynchronous receiver and transmitter UART . The 1450 is foot print compatible to the SSI 73M1550 and SSI 73M2550 UART with one byte FIFO and higher

ssi 73M2550

Abstract: 73M1550 ST16C1450
Contextual Info: ST16C1450 -UART with One Byte FIFO HomeNewsCareers Investor Relations Contact Us PartnerNet Login Search CommunicationsInterfacePower Management ST16C1450 Support Info Request How to Order Samples How to Buy Print this page UART with One Byte FIFO Specifications

Contextual Info: CY10E474 CY100E474 CYPRESS: SEMICONDUCTOR 1024 x 4 ECL Static RAM Features • Open em itter output for ease of memory expansion • 1024 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — t* = 3 ns, t*cs = 2 ns — IEE = 275 mA

Contextual Info: ERICSSON ^ PTB 20077 0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor Description The 20077 is a class A, NPN, com mon em itter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 0.7 watt minimum output power, it may be used for both CW and PEP

DIODE ku 1490

Abstract: ku 1490 spectra Ve 1200 capacitor ase 104
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 D e sig n e d fo r 26 v o lts m icro w a ve la rg e -s ig n a l, c o m m o n em itte r, cla s s A and c la s s A B lin e a r a m p lifie r a p p lic a tio n s in in d u s tria l a n d c o m m e rc ia l F M /A M

FTLX3813

Abstract: transce FTLX3 FTLX3813M317P X3813M3
Contextual Info: Finisar Productt Specificaation Multiprotoccol, 80km m, 10Gb/ss DWDM M XFP Op ptical Trransceiver FTLX X3813M33xx PROD DUCT FEA ATURES • Supports 8.5G Gb/s to 11.32 2Gb/s • Hot-pluggabl H le XFP footp print • TemperatureT -stabilized DWDM D EML L trransmitter

A301D

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • On-chip voltage compensation for im­ proved noise margin Features • 1024 x 4 ECL Static RAM 1024 x 4 -b it organization • Open em itter output for ease of memory expansion • Ultra high speed/standard power

BD 135 transistor

Abstract: zt173
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information The RF Line MRF15090 NPN Silicon RF Power Transistor D e sig n e d fo r 2 6 vo lts m icro w a ve la rg e -s ig n a l, c o m m o n em itter, cla s s A and c la s s A B lin e a r a m p lifie r a p p lic a tio n s in in d u s tria l a n d c o m m e rc ia l F M /A M

Contextual Info: CY10E422 CY100E422 : J P ' CYPRESS — — SEMICONDUCTOR 256 x 4 ECL Static RAM • Open em itter output for ease of memory expansion Features • 256 x 4 -b it organization • • Ultra high speed/standard power Industry-standard pinout F unctional D escrip tion

Contextual Info: ERICSSON ^ PTB 20202 125 Watts, 1465-1513 MHz Cellular/DAB RF Power Transistor Description The 20202 is an NPN com m on em itter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 125 watts minim um output power, it is specifically intended for cellular

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 20174 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ
Contextual Info: ERICSSON ^ PTB 20174 90 Watts, 1400-1600 MHz RF Power Transistor Description T he 20174 is an NPN, com m on em itter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minim um output power, it may be used for both C W and PEP

Contextual Info: CY10E422 CY100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description

2SK2038

Abstract: Transistor TOSHIBA 2SK
Contextual Info: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)

Contextual Info: NEC //PB10470 4 ,0 9 6 X 1-BIT 10K ECL RAM NEC Electronics Inc. Description Pin Configuration O o 18-Pln Ceramlc DIP 4K -w ord x 1-bit organization 10K ECL interface O pen em itter output noninverted Fast access times Low pow er consum ption 300-m il, 18-pin ceram ic D IP packaging

AH720

Abstract: w4 DIODE impatt AH751 impatt diode
Contextual Info: AH720.AH741/AH750.AH771 G aAs IMPATT P O W E R G E N E R A T I O N D I O D E S FEATURES O perating fre que ncy range : 10, 14, 16G H z C ase style: W 4 E m itting p o w e r : 2 to 5W atts A P PL IC A TI O N S T h e IM P A T T d io d e s are s u ita b le fo r u s e as

t20d

Abstract: GT20D201
Contextual Info: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 HIGH POWER AM PLIFIER APPLICATION • H igh B reakdow n V o ltag e : V c E g = - 2 5 0 V Min. • H igh F orw ard T ran sfe r A d m ittan ce : |Yfe | = 1 0 S (T y p .)