CY100E474 Search Results

10E474

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR Features • On-chip voltage compensation for im­ proved noise margin • 1024 x 4-bit organization • Ultra high speed/standard power — *AA = 3.5 ns • Open emitter output for ease of memory expansion • Industry-standard pinout

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • 1024 x 4 - b it organization • Ultra high speed/standard power — 1 \ \ = 3.5 ns — Iee = 275 mA • Low-power version — Iaa = 5 ns — Iee = 190 mA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version

A301D

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • On-chip voltage compensation for im­ proved noise margin Features • 1024 x 4 ECL Static RAM 1024 x 4 -b it organization • Open em itter output for ease of memory expansion • Ultra high speed/standard power

c4744

Abstract: 10E474-5K 10E474
Contextual Info: CY10E474 CY100E474 CYPRESS : SEMICONDUCTOR • Features • 1024 x 4-bit organization • Ultra high speed/standard power — = 275 mA — I ce = 190 mA • Both 10KH/10K and 100K com patible I/O versions 10K/10KH M ilitary version • O n-chip voltage com pensation for

ALC113

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • On-chip voltage compensation for im­ proved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout Features • 1024 x 4-bit organization • Ultra high speed/standard power

CY7C2901

Contextual Info: ÌB Ìcy p ress • Table 10. Die Sizes of Cypress Devices continued P a rt N um ber Size (mil2) P a rt N um ber Size (mil2) ECL Logic CY 2909A 7968 CY100E301L 14875 CY2910A 21750 CY100E302L 14875 CY2911A 7968 CY100E422 6960 11800 CY100E474 10830 CY7C510

Contextual Info: CY10E474 CY100E474 CYPRESS: SEMICONDUCTOR 1024 x 4 ECL Static RAM Features • Open em itter output for ease of memory expansion • 1024 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — t* = 3 ns, t*cs = 2 ns — IEE = 275 mA

CY100E474

Abstract: CY10E474 E474 10E474-5 CY10E474L-5DC
Contextual Info: CY10E474 CY100E474 IK x 4 ECL Static RAM SEMICONDUCTOR Features • On-chip voltage compensation for im­ proved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout • 1024 x 4-bit organization • Ultra high speed/standard power

tc 89101 p

Contextual Info: CYPRESS SEMICONDUCTOR Features 1024x4 ECL Static RAM • On-chip voltage compensation for im­ proved noise margin • 1024 x 4 —bit organization • Ultra high speed/standard power • Open em itter output for ease o f memory expansion — Ia a = 3 -5 n s

CY62256LL-PC

Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
Contextual Info: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2

M63064

Abstract: M63041 M63002 M63080 CY7C964-NC m63032 M63058 M63065 M63069 M63057
Contextual Info: RELIABILITY MONITOR SUMMARY Description of Data Table Column Headings AAA AAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAAAAA

CY27S03A

Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
Contextual Info: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability

CY7C9101

Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
Contextual Info: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the

Gunn Diode symbol

Abstract: cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet
Contextual Info: CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY APPENDIX A: FAILURE RATE CALCULATION Thermal Acceleration Factors Acceleration factors AF for thermal stresses (High Temperature Operating Life, Data Retention and High Temperature Steady State Life) are calculated from the Arrhenius equation.