147T Search Results

Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter

Contextual Info: 7=12=1237 002^201 T • T -3»3 -Z P \ SGS-THOMSON poæiItLgOTiMOi TIP140T/141T/142T TIP145T/146T/147T S 6 S-TH0MS0N 3DE » LOW VOLTAGE HIGH CURRENT POWER DARLINGTON ADVANCE DATA ■ MONOLITHIC DARLINGTON CONFIGURA­ TION ■ LOW VOLTAGE « HIGH CURRENT ■ HIGH GAIN

tip141 equivalent

Abstract: TIP140 TIP141 TIP142 TIP145T TIP146T TIP147T tip142 equivalent
Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter

147T

Abstract: TIP147T "Darlington Transistor" TIP146T darlington power transistor 10a pnp darlington to-220 10a TIP145T
Contextual Info: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T Equivalent Circuit

TIP142T

Abstract: gto 5A NPN Transistor TO220 VCEO 60V IC 5a TIP140T TIP141T US Global Sat
Contextual Info: TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. Industrial Use Complement to TIP145T/146T/147T

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 45T/146T/147T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = - 4V, IC = - 5A T O -2 2 0 M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E C o m p le m e n t to T IP 1 4 0 T /1 4 1 T /1 4 2 T

Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T 1 TO-220 PNP Epitaxial Silicon Darlington Transistor

TIP 41 transistor

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140T/141T/142T HIGH DC CURRENT GAIN-MIN hFE=1000 @ Vce=4V, lc = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C om plem ent to TIP145T/146T/147T ABSOLUTE MAXIMUM RATINGS

tip142

Abstract: TIP140T TIP141T TIP142T 141T
Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter

GE636

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145T/146T/147T HIGH DC CURRENT GAIN-MIN hFE=1000 @ V ce = -4 V , lc = - 5 A T O -2 2 0 MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C o m p le m e n t to TIP140T/141T/142T

Contextual Info: TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. Industrial Use Complement to TIP145T/146T/147T

NPN Transistor TO220 VCEO 60V IC 5a

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A TO-220 MONOLITHIC CONSTRUCTION IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to TIP145T/146T/147T ABSOLUTE MAXIMUM RATINGS Characteristic

T1P142T

Contextual Info: NPN EPITAXIAL SILICO N DARLINGTON TRAN SISTO R TIP140T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E Complement to TIP145T/146T/147T

142T

Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T 1 TO-220 NPN Epitaxial Silicon Darlington Transistor

TIP147T

Abstract: TIP145T TIP146T
Contextual Info: TIP145T/146T/147T TIP145T/146T/147T ◎ SEMIHOW REV.A0,Oct 2007 TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min.

TIP146T

Contextual Info: PNP EPITAXIAL SILICO N DARLINGTON TRANSISTO R TIP145T/146T/147T HIGH DC CU RREN T GAIN - MIN hFE = 1000 @ Vce = -4V, IC = -5 A TO-220 M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S I S T O R S IN D U S T R IA L U S E Com plem ent to T IP140T/141T/142T

Contextual Info: Xcelite 7 Piece Hollow Shaft Color Coded Handled Nutdriver Set Product Details Catalog No. UPC Code Type of Case Number of Tools Number of Screwdrivers Number of Nutdrivers Number of Pliers/Cutters Number of Other Tools 147TB 037103483638 Blow Molded Packaging

Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter

NPN Transistor VCEO 80V 100V

Abstract: tip141 equivalent TIP140 TIP140T TIP141 TIP141T TIP142 TIP142T tip142 equivalent
Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter

TIP145T

Abstract: TIP146T TIP147T
Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter

TC40H175P

Abstract: TC40H175 TC40H
Contextual Info: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA . C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC40H175 TC40H175P/F QUAD 0-TYPE FLIP-FLOP The TC40H175 is a quad D-type flipflop having common CLOCK and common CLEAR input. The logical input applied to data input is

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

C45N equivalent

Abstract: general electric c350 C350 cdi dc with scr for 15 ampere, 12 volt C150P C147D TRANSISTOR D1651 General electric SCR C147M C147 C45U
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00

GT123

Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT