15 A PNP POWER TRANSISTOR Search Results

40394

Abstract: PNP Transistors MD14
Contextual Info: 40394 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40394 VCEV 60 hFE 15 IC .15 Notes VCEO 40 hFE A .001 COB Polarity PNP ICEV Power Dissipation

PNP Transistors

Abstract: TO-205AD 40349
Contextual Info: 40349 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40349 VCEV 160 hFE 30 IC .15 Notes VCEO 140 hFE A .15 COB Polarity NPN ICEV Power Dissipation

BCP68

Abstract: BCP69 BCP69-16 BCP69-25 SC-73
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP69 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2002 Nov 15 2003 Nov 25 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69

sanken power transistor 2SA1216

Abstract: 2SC2922 SANKEN 2SC2922 sanken transistor sanken 2sc2922 Sanken 2SC2921 transistor 2sb1624 2sd2493 Sanken Transistor Mt 200 sanken 2sa1216 D01EC0 2sc2921 sanken
Contextual Info: DISCRETE DEVICES DISCRETE BIPOLAR POWER TRANSISTORS Part Numbers PNP NPN PD W VCEO (V) IC (A) 80 80 80 80 120 120 140 180 140 180 200 200 6 6 6 6 8 8 10 15 10 15 15 17 fT (MHz) hfe (min) PNP/NPN Package Standard, Single-Emitter Types 2SA1725 2SA1726 2SA1693

sanken power transistor 2SA1216

Abstract: 2SC2922 sanken transistor 2SC2922 SANKEN 2sc3263 sanken 2SA1186 SANKEN Sanken Transistor Mt 200 2SD2494 sanken power transistor 2sa1295 D01EC0 2sc2837
Contextual Info: DISCRETE DEVICES DISCRETE BIPOLAR POWER TRANSISTORS Part Numbers PNP NPN PD W VCEO (V) IC (A) 80 80 80 80 120 120 140 180 140 180 200 200 6 6 6 6 8 8 10 15 10 15 15 17 fT (MHz) hfe (min) PNP/NPN Package Standard, Single-Emitter Types 2SA1725 2SA1726 2SA1693

BCP68

Abstract: BCP69 BCP69-16 BCP69-25 SC-73
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP69 PNP medium power transistor Product specification Supersedes data of 1999 Apr 08 2002 Nov 15 Philips Semiconductors Product specification PNP medium power transistor BCP69 FEATURES PINNING • High current max. 1 A

BDY90

Abstract: BUW35 BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6674 15 175 350 300 8.0 2N6675 15 175 450 400 8.0 NPN PNP hFE *TYP @ IC VCE(SAT) @ IC fT *TYP (MHz) MIN (A) (V) MAX (A) 20 - 5.0 15 20 - 5.0 15 15 15

BUW35

Abstract: BDX85A BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6674 15 175 350 300 8.0 2N6675 15 175 450 400 8.0 NPN PNP hFE *TYP @ IC VCE(SAT) @ IC fT *TYP (MHz) MIN (A) (V) MAX (A) 20 - 5.0 15 20 - 5.0 15 15 15

D45VH4

Abstract: D45VHI D45VH7 D45VH1 D45 TRANSISTOR D44VH D45VH D45VH10 D45VHI0
Contextual Info: VERY HIGH SPEEED D45VH Series PNP POWER TRANSISTORS -30 - -80 VOLTS -15 AMP, 83 WATTS COMPLEMENTARY TO THE D44VH SERIES The D45VH is a PNP power transistor especially designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where

TIP36C

Abstract: TIP36A TIP36C EQUIVALENT TIP36B
Contextual Info: SILICON HIGH- POWER TRANSISTOR PNP TIP36A/B/C 25A 125W Technical Data …designed for use in general-purpose switching and power amplifier applications. F DC Current Gain - h FE = 15 Min @ IC = 15 Adc F 25 A Collecter Current F TO-218 Package MAXIMUM RATINGS

buw34

Abstract: BUW35 2N6675 BU208A buw44 BDW52 bdx85 BU208 BUX80 2N6674
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP 2N6674 *C Pd (A) <W) MAX 15 2N6675 BVc b O BV c e o (V) MIN 175 350 (V) MIN 300 e ie hFE TYP (A) 8.0 (V) @,c fr *TYP (A) (MHZ) MAX MAX MIN v CE(SAT) MIN 20 . 5.0 15 15 15 175 450 400 8.0 20 . 5.0

BDW52

Abstract: BDY90 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C BDW52A BDW52B
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. *C (A) NPN PNP Pd (W) MAX BVc b O BV c e O @lc hFE *TYP v CE(SAT) @ lc *r *TYP (A) (A) (MHZ) (V) (V) MIN MIN MIN MAX 8.0 20 . 5.0 15 15 00 MIN MAX 2N6674 15 175 350 300 2N6675 15 175 450 400 8.0 20 . 5.0

BDW51

Abstract: buw34 BUW35 BDW52 BDX86C BU208 BUX47 BUX80 2N6674 2N6675
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP •c Pd (A) <W) MAX e ie hFE TYP BV c b O BV c e O (V) (V) MIN MIN MIN MAX (A) VCE(SA T) @*c fr *TYP M MAX (A) (MHZ) MIN 2N6674 15 175 350 300 8.0 20 . 5.0 15 15 2N6675 15 175 450 400 8.0 20 . 5.0

Contextual Info: 2SA1898 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)3 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)250m @I(C) (A) (Test Condition)1.5

Contextual Info: 2N5880 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)160# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)15

Contextual Info: 2N2098 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)15 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1238 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)12 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

smd TRANSISTOR code marking 2007

Abstract: SMD CODE PACKAGE SOT89 006aaa231 TRANSISTOR SMD CODE PACKAGE SOT89 2PB1424 2PD2150 SMD CODE PACKAGE SOT89-4 sot89 bv
Contextual Info: 2PB1424 20 V, 3 A PNP low VCEsat BISS transistor Rev. 02 — 15 January 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.

V9040Z

Abstract: PBHV9040Z PBHV8540Z SC-73 MARKING SMD IC CODE 10 pin
Contextual Info: PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

Contextual Info: 2N588 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)15 I(C) Max. (A)50m Absolute Max. Power Diss. (W)30m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)15 h(FE) Min. Current gain. h(FE) Max. Current gain.

lu387

Contextual Info: G E SOLID STATE DE | 01 Bfl7SDfll D ü m ia r - a 3- ^ 3 J" VERY HIGH SPEED D45VH Series PNP POWER TRANSISTORS -30 •-80 VOLTS -15 AMP, 83 WATTS .COMPLEMENTARY TO THE D44VH SERIES The D45VH is a PNP power transistor especially designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where

Contextual Info: 2N6469 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W)71# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)15

Contextual Info: 2N6489 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)15

Contextual Info: 2N6491 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)15