2SA1898 Search Results

Contextual Info: IC SMD Type Product specification 2SA1898 Features Adoption of FBET and MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter

Contextual Info: 2SA1898 Ordering number : EN5049A SANYO Semiconductors DATA SHEET 2SA1898 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • High-speed switching. Features • • • • Adoption of FBET and MBIT processes. Large current capacity.

2SA1898

Abstract: MARKING AN
Contextual Info: Ordering number:EN 5049 _ 2SA1898 No.5049 PNP Epitaxial Planar Silicon Transistor DC/DC Converter A p p licatio n s • High-speed switching. F e a tu re s • Adoption of FBET and MBIT processes. • Large current capacity. •Low collector-to-emitter saturation voltage.

2SA1898

Abstract: MARKING AN
Contextual Info: Ordering number:5049 PNP Epitaxial Planar Silicon Transistor 2SA1898 DC/DC Converter Application Applications Package Dimensions • High-speed switching. unit:mm 2038A Features [2SA1898] · Adoption of FBET and MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage.

Contextual Info: 2SA1898 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)3 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)250m @I(C) (A) (Test Condition)1.5

SMD BR

Abstract: 2SA1898
Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1898 Features Adoption of FBET and MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

EN5049

Contextual Info: Ordering nurnbe-: EN5049 2SA1898 No.5049 P N P E p ita x ia l P l a n a r Silicon T r a n s i s to r DC/DC Converter A p p licatio n s • H ig h-sp eed sw itching. F e a tu re s • A doption of F B E T an d M B IT processes. • L a rg e c u r r e n t capacity.

2SA1898

Contextual Info: 2SA1898 Ordering number : EN5049A SANYO Semiconductors DATA SHEET 2SA1898 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • High-speed switching. Features • • • • Adoption of FBET and MBIT processes. Large current capacity.

2SA1898

Abstract: ITR05012 ITR05013 ITR05014
Contextual Info: Ordering number:ENN5049 PNP Epitaxial Planar Silicon Transistor 2SA1898 DC/DC Converter Application Applications Package Dimensions • High-speed switching. unit:mm 2038A Features [2SA1898] · Adoption of FBET and MBIT processes. · Large current capacity.

kw2j

Abstract: MARKING 2J0 2sc2960 a-y
Contextual Info: SAfÊYO H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S Siali Signal Transistors F e a t u r e s Case Outlines (unit¡an) SANYO :SMCP SANYO :MCP *High switching speed *High breakdown voltage * Low collector saturation voltage *Very small-sized package permitting a set to be made smaller

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SA1898

Abstract: FP106 ITR10818 ITR10819
Contextual Info: 注文コード No. N 4 5 5 2 FP106 No. N4552 82200 FP106 特長 TR : PNP エピタキシァルプレーナ形シリコントランジスタ Di : ショットキバリアダイオード DC / DC コンバータ用 ・PNP トランジスタとショットキバリアダイオードを 1 パッケージに 2 素子内蔵した複合タイプであり

EN4552

Abstract: 2SA1898 FP106
Contextual Info: Ordering number:EN4552 FP106 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

2SC5188

Abstract: 2SA1935 2sc5187 2sa193 2SA1936 2SC4453 2SA1607 2SA1728 2SA1764 2SC4168
Contextual Info: SAf/YO H IG H - S P E E D S W IT C H IN G A P P L IC A T IO N S {Saal! Signal Transistors SANYO:SMCF F e a t u r e s Case Outlines unit:mm) SANYO: MCP * H i g h switching speed * H i g h breakdown voltage 1 ♦ Low collector saturation voltage ♦ Very small-sized package permitting a set to be made smaller -

Contextual Info: Ordering number : EN 4552 SANYO No.4552 ¡I_ FP106 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC-DC Converter Applications F eatu res • Complex type with a PNP transistor and a Schottky barier diode in one package, facilitating highdensity mounting.

2SA1898

Abstract: FP106 MARKING 106
Contextual Info: Ordering number:EN4552 FP106 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.

Contextual Info: SA/iYO Lists for- T y p e No. 2SA type_ Type No. ma rk- Package ing 2SA 1252 D • C p E • 2 SA 125 6 C p 2 SA 125 7 G • C p 2 SA 13 3 1 0 • C p A L 2SA1338 C p 2 SA 13 4 1 B L c p 2 SA 134 2 C L c p 2 SA 134 3 D L c p 2 SA 1344 E L c p