15X17 Search Results

Contextual Info: 10 -HE A A\ S M L — / -7 TRADE MARK I HOUSING (PA, UL9AV-0) z : A - ? -ft u Pz z TERMINAL I (7x7) i r h r h r h r h r h r h r h r h n n n n r 1 i n n n Mn n Ji I A o„4 I f (0.32) ILLl=j^4±4 1 (15x17^77177) I I ( 'I PAYfi. —7 V/cTIE I T T 1= 0.32)

Contextual Info: 5 4 .3 6 max. 4 4 max. K o d ie r u n g / c odin g , ~ \ , _ _i_ _ i _ 16 E ia 15x12341 = 1381 1 0 4 - 9 0 0 3 5 C32F a,c H a n d lo t / m a n u e l s o ld e r in g 5.5mm 49.36±0.1 15x17341 = 1381 QK II / c la s s 2 Standard Kontakt / Standard Contact |5.Sinin|

M22-XST

Abstract: KSS cable marker wago 870 3d printer 200913 plotter 350 XM-L 25817-8 plotter ip-220
Contextual Info: Item no. 258-297 Item no. 258-298 Thermal transfer printers Printing method Thermal/Thermal transfer Printing method Thermal/thermal transfer Ink ribbon for marker strips Print resolution 203 dpi Print width max. 104 mm Print resolution 300 dpi Label width

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

Contextual Info: IS61DDP2B22M18A IS61DDP2B21M36A 2Mx18, 1Mx36 36Mb DDR-IIP Burst 2 CIO Synchronous SRAM (2.0 Cycle Read Latency) FEATURES •                   1Mx36 and 2Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid

Contextual Info: IS61QDP2B41M18A IS61QDP2B451236A 1Mx18 , 512Kx36 18Mb QUAD-P Burst 4 SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES •                    512Kx36 and 1Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid

Contextual Info: IS61QDB41M18A IS61QDB451236A 1Mx18, 512Kx36 18Mb QUAD Burst 4 SYNCHRONOUS SRAM FEATURES •                   512Kx36 and 1Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid

Contextual Info: IS61DDP2B21M18A IS61DDP2B251236A 1Mx18, 512Kx36 18Mb DDR-IIP Burst 2 CIO Synchronous SRAM (2.0 Cycle Read Latency) FEATURES •                   512Kx36 and 1Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid

Contextual Info: IS61DDP2B44M18A/A1/A2 IS61DDP2B42M36A/A1/A2 4Mx18, 2Mx36 72Mb DDR-IIP Burst 4 CIO SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES •                     2Mx36 and 4Mx18 configuration available.

Contextual Info: IS61QDP2B41M18A/A1/A2 IS61QDP2B451236A/A1/A2 1Mx18 , 512Kx36 18Mb QUADP Burst 4 SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES •                     512Kx36 and 1Mx18 configuration available.

Contextual Info: K7Q323684M K7Q321884M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.

Contextual Info: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.

capacitor 0.33uf x2

Abstract: .0068uf "class x2" capacitor 0.15 .1uf M 275 vac MKP
Contextual Info: MKP Class X2 EMI/RFI Boxed Metallized polypropylene film capacitors Features •   Metallized polypropylene High dvdt Small size   Low self inductance Low ESR   Across the line Antenna coupling Applications   EMI Filter Line by pass

JTAG 10P

Abstract: K7R641882M-FC25 K7R640982M-FC25 K7R643682M-FC20
Contextual Info: K7R643682M K7R641882M K7R640982M Preliminary 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Sep, 14 2002 Advance 0.1 1. Update AC timing characteristics.

K7R643684

Contextual Info: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb M-die QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: K7Q323652M K7Q321852M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5. 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA

Contextual Info: K7I323684C K7I321884C Preliminary 1Mx36 & 2Mx18 DDRII CIO b4 SRAM 36Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: K7J643682M K7J641882M Preliminary 2Mx36 & 4Mx18 DDR II SIO b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Mar. 9, 2003 Advance 0.1 1. Correct the JTAG ID register definition

Contextual Info: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.

Contextual Info: K7Q323654M K7Q321854M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5, 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA

Contextual Info: Preliminary K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Mar. 9, 2003 Advance 0.1 1. Correct the JTAG ID register definition

Contextual Info: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.

K7R323682M-FC20

Abstract: K7R320982M-FC20
Contextual Info: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001