16K NMOS DYNAMIC RAM Search Results

MB8264

Abstract: MB8264-15 i-117 mb81416
Contextual Info: NMOS Dynamic RAMs Quick Cuide To Products in This Section D ev Ice O rg an ization Ac c m « Tim « max Pow er S u p p ly Volts P o w er D issip atio n Package P ag e MRM17-10 V U i117-12 16K x 1 16K x 1 100 nS 120 nS +5 +5 182/20 mW 160/20 mW 16-pin 16-pin

MC3480

Abstract: Dynamic Memory Refresh Controller MC3242A RA54 64k nmos dynamic ram M6800 nmos to ttl interface CASE-710
Contextual Info: INTERFACE CIRCUITS continued gïïû ^ Offifetfife}©© ©oû(o] ©©oüSd^D NMOS Memories to TTL Systems MULTIPLEXED 16-PIN RAM CONTROL (For 4K, 16K, and 64K Dynamic Memories) MC3480 — Memory Controller. Used with all three levels of RAM. The memory controller chip is designed to greatly sim­

a5 gnd

Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns

MCM2114P20

Abstract: MCM2114 MCM68A10 MCM6810 rams Sub-100 M6800 MCM2016H MCM2167H MCM4517
Contextual Info: Memories-MOS Random Access MemoBios NMOS RAMs — Dynamic High speed, high density and low cost have made N-Channel dynamic Random Access Memories the cornerstones of the expanding computer industries. Motorola NMOS RAMs combine high performance with excellent reliability.

MC68121

Abstract: M6800 MCM2016 MC68120 MCM6810 MCM2114 MCM4517 MCM2016H MC6801 mc681
Contextual Info: MC6844 MCM68HC34 MC68120 MC68121 MC146818A M6800-Compatible Memory Parallel/Serial. 128 x 8-Bit Static RAM — Available in plastic and ceramic packages to coincide with the speed and tem­ perature specifications of the M6800 Family. MCM6810 Intelligent Peripheral Controller — This highly so­

Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q

LM33256

Abstract: LM33256N 64K x 8 BIT DYNAMIC RAM LM33256K sanyo LC3564PL lc3664* sanyo LC324256 4m static ram 8K Static RAM 16k nmos dynamic ram
Contextual Info: SANYO SEMICONDUCTOR CORP Continued from preceding page. 3SE D • 7 n 7 D 7 b 0QD75b3 S ■ T'W'Zl-V- M E M O R I E S monolithic integrated circuit —-v.y *f* ; Type 1 . ij Package' Pins 4 Package’ -■Circuit Functions & Applications c : * j: MainSjedficafibns

Contextual Info: Philips Semiconductors CMOS and NMOS 8-bit microcontroller family 3300 FAMILY CMOS continued TYPE 3359A ROM 2 RAM SPEED (MHz) 64 1-16 PACKAGE DIL28 S028 LQFP32 3745A 4.5k (OTP) 256 1-16 FUNCTIONS OM5501/2 16 I/O lines, 8-bit timer, RTC, VDD 1.8V-6V 2 Programmable

S443

Abstract: idt71682 s448 16k nmos dynamic ram S447
Contextual Info: C M O S STATIC RAMS 1 6 K 4 K x 4-B IT IDT 71681SA/LA IDT 71682SA/LA Separate Data Inputs and Outputs FEATURES: DESCRIPTION: • Separate data inputs and outputs • IDT71681SA/LA: outputs track inputs during write mode • IDT71682/SA/LA: high impedance outputs during write mode

sc1007

Abstract: dt6167
Contextual Info: INTEGRATED DEVICE 14E D • 4Ö25771 00035tb 4 ■ IDT 6167SA IDT 6167LA CMOS STATIC RAM 16K 16K x 1-BIT TW6-23-05 FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) The IDT6167 Is a 16,384-blt high-speed static RAM organized as 16K x 1. The part Is fabricated using IDT's high-performance, hlghreiiabllity tech nolog y-C E M O S . This state-of-the-art technology,

Y24121

Abstract: S444 S443
Contextual Info: INTEGRATE» DEVICE IME D • 4055771 0003304 fl CMOS STATIC RAMS 1 6K 4K x 4-BIT Integrated DevfceTèchnoiogy Inc ID T 7 1 6 8 1 S A /L A ID T 7 1 6 8 2 S A /L A Separate Data Inputs and Outputs T -yt> -Z 3 -0 $ FEATURES: DESCRIPTION: • Separate data Inputs and outputs

Contextual Info: Integrated DeviceTechnology Inc CM O S STATIC RAM 16K 16K x 1-BIT IDT 6167SA IDT 6167LA FEA T U R ES : DESCRIPTION: • The IDT6167 Is a 16,384-blt high-speed static RAM organized as 16K x 1. The part Is fabricated using IDT’s high-performance, highreliabillty technology-CEM OS. This state-of-the-art technology,

Contextual Info: CMOS STATIC RAM 16K 2 K X 8 BIT IDT6116SA IDT6116LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Optimized for fast RISC processors including the IDT79R3000 • High-speed — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commercial: 15/20/25/35/45ns (max.)

IC cs 4852

Abstract: dt6116 S0244
Contextual Info: INTEGRATE] DEVICE 3ÖE D • 4 Ö 2 S 7 7 1 G Q 0 Ö 1 4 1 =î « I D T _ - r - t u - 2 - V - l Z . IDT6116SA IDT6116LA CMOS STATIC RAM 1 6 K 2 K X 8 BIT) NOTICE SEE ORDER OF DATA FOR ERRATA IN FO RM AT IO N FEATURES: DESCRIPTION:

Contextual Info: CMOS STATIC RAM 16K 2 KX8 BIT IDT6116SA IDT6116LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Optimized lo r fast RISC processors including the IDT79R3000 • High-speed — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commercial: 15/20/25/35/45ns (max.)

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

IC cs 4852

Abstract: s4148 S4-144
Contextual Info: INTEGRATED 14E D D E VI CE • 4 Ô 5 S 7 7 1 0 0 0 3 4 0 0 =i H CMOS STATIC RAM 1 6 K 2K x 8-BIT ID T 6 1 1 6 S A ID T 6 1 1 6 L A 'T - H 6 '2 S - \ Z FEATURES: DESCRIPTION: • Optimized for fast RISC processors Including the IDT79R3000 • High-speed

MLPQ-16L

Abstract: SCHEMATIC DIAGRAM lcd 12v 5A 16SEPC270 LX2750 MMBT3904 NTD60N02R NTD70N03R op 2950
Contextual Info: LX2750 SINGLE INPUT SUPPLY PWM CONTROLLER WITH LDO CONTROLLER PRODUCTION DATA SHEET Pb Free Product DESCRIPTION The LX2750 controller IC is a compact synchronous Buck controller IC with 16 lead MLPQ package designed for step-down DC to DC converter applications.

S4-144

Abstract: IC cs 4852 T6116 6116LA25
Contextual Info: CMOS STATIC RAM 16K 2Kx 8-BIT (*/ integrated Devte Technology Inc IDT 6116SA IDT 6116LA FEATURES: DESCRIPTION: • O p tim ize d for fast RISC proce sso rs in clu d in g the IDT79R3000 • H igh-speed T h e ID T6116SA /LA is a 16,384-blt h ig h -sp ee d static RAM or­

2164 dynamic ram

Abstract: intel 8203 2164A 8202a intel microprocessor pin diagram 8202A intel 4002 8088 ram 256K pin diagram of intel IC 8203 diagram of IC 8203 Intel 2164
Contextual Info: in t e i 82C03 CMOS 64K DYNAMIC RAM CONTROLLER • Provides All Signals Necessary to NMOS 2164A and CMOS Control (51C64) 64K Dynamic Memories Internal Clock Capability ■ Directly Addresses and Drives Up to 64 Devices Without External Drivers Provides System Acknowledge and Trans­

Contextual Info: LX2750 SINGLE INPUT SUPPLY PWM CONTROLLER WITH LDO CONTROLLER PRODUCTION DATA SHEET Pb Free Product DESCRIPTION The LX2750 controller IC is a compact synchronous Buck controller IC with 16 lead MLPQ package designed for step-down DC to DC converter applications.

LX27

Abstract: H11M1
Contextual Info: LX2750 SINGLE INPUT SUPPLY PWM CONTROLLER WITH LDO CONTROLLER PRODUCTION DATA SHEET Pb Free Product FEATURES DESCRIPTION Single Input 12V Bus Voltage Excellent Dynamic Response with Selectable Feedforward Voltage Mode Control or Constant On Time Control Diode Emulation Mode Available

Contextual Info: in te i 82C03 CMOS 64K DYNAMIC RAM CONTROLLER Provides All Signals Necessary to NMOS 2164A and CMOS Control (51C64) 64K Dynamic Memories • Provides Refresh/Access Arbitration ■ Internal Clock Capability ■ Directly Addresses and Drives Up to 64 Devices Without External Drivers

BIPOLAR PROM PROGRAMMING SPECIFICATION

Abstract: Cypress introduction to CMOS PROMs CMOS differential amplifier cascode Bipolar PROM programming sense amplifier bitline memory device cypress eproms
Contextual Info: Introduction to C M O S P R O M s SEMICONDUCTOR 1: Product Line Overview 3: Design Approach The Cypress CMOS family of PROMs span 4K to 512K bit densities, three functional configurations, and are all byte-wide. The product line is available in both 0.3 and 0.6