16V 4600 UF Search Results
16V 4600 UF Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPS61372YKBR |
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16V/3.6A sync boost with load disconnect 16-DSBGA -40 to 125 |
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TPS61372YKBT |
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16V/3.6A sync boost with load disconnect 16-DSBGA -40 to 125 |
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LM2742MTCX/NOPB |
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2.2-16V, Voltage Mode Synchronous Buck Controller with Adjustable Soft Start 14-TSSOP -40 to 125 |
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LM2742MTC/NOPB |
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2.2-16V, Voltage Mode Synchronous Buck Controller with Adjustable Soft Start 14-TSSOP -40 to 125 |
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LM2743MTC/NOPB |
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2.2-16V, Voltage Mode Synchronous Buck Controller with Tracking 14-TSSOP -40 to 125 |
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16V 4600 UF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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LTM4600
Abstract: 4600 fet transistor 4600 fet 6TPE330MIL LTM4600EV LTM4600IV PN01 4600 mosfet MOSFET 4600
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LTM4600 Included601 LTM4601-1 LTM4602 LTM4603 LTM4603-1 LTM4601 4600fc LTM4600 4600 fet transistor 4600 fet 6TPE330MIL LTM4600EV LTM4600IV PN01 4600 mosfet MOSFET 4600 | |
LTM4600
Abstract: LTM4600IV#PBF
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LTM4600 LTM4600 LTM4601-1 LTM4601 100pF C3216X5R1E106MT JMK316BJ226ML-T501 4TPE470MCL 4600fb LTM4600IV#PBF | |
CGH27015F-TB
Abstract: amplifier circuit ofdm amplifier cree rf 10UF 470PF CGH27015 CGH27015F CGH27015-TB TRANSISTOR A98
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CGH27015F CGH27015 CGH2701 CGH27015F CGH27015F-TB amplifier circuit ofdm amplifier cree rf 10UF 470PF CGH27015-TB TRANSISTOR A98 | |
Contextual Info: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX |
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CGH27015 CGH27015 CGH2701 | |
ofdm amplifierContextual Info: PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX |
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CGH27015F CGH27015 CGH2701 CGH27015F ofdm amplifier | |
Contextual Info: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX |
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CGH27015 CGH27015 CGH2701 27015P | |
Contextual Info: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX |
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CGH27015 CGH27015 CGH2701 | |
Contextual Info: PRELIMINARY CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and |
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CGH35060F CGH35060F CGH3506 | |
CGH27060F
Abstract: 10UF 470PF
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CGH27060F CGH27060F CGH2706 10UF 470PF | |
Contextual Info: PRELIMINARY CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high |
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CGHV40100 CGHV40100 CGHV40100, CGHV40 V40100P | |
Contextual Info: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a |
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CGHV35150 CGHV35150 CGHV35150F-TB | |
Contextual Info: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and |
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CGHV1F025S CGHV1F025S | |
ATC600L
Abstract: CGH55030F2 ATC600S CGH55030 CGH55030P2 CGH5503 cree driver CGH40025F CGH55030-TB CGH55
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CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 ATC600L ATC600S CGH55030 CGH5503 cree driver CGH40025F CGH55030-TB CGH55 | |
Contextual Info: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a |
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CGHV35150 CGHV35150 CGHV35150F-TB | |
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CGH55030P2
Abstract: CGH5503 CGH55030 CGH55030F2 CGH55030-TB JESD22
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CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 | |
Contextual Info: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a |
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CGHV27200 CGHV27200 CGHV27 GHV27200P CGHV27200-TB | |
Contextual Info: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and |
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CGHV1F025S CGHV1F025S | |
Contextual Info: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar |
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CGHV14250 CGHV14250 CGHV14 350anning, | |
CGH55030F2
Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE
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CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE | |
Contextual Info: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz |
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CGHV27200 CGHV27200 CGHV27 GHV27200P | |
CGH55030F2Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/ |
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CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 | |
Contextual Info: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied |
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CGH35030F CGH35030F CGH3503 | |
Contextual Info: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a |
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CGHV27200 CGHV27200 CGHV27 GHV27200P | |
Contextual Info: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz |
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CGHV27200 CGHV27200 CGHV27 GHV27200P |