17APR96 Search Results
17APR96 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Temic BFR182T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. *" Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features |
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BFR182T 17-Apr-96 | |
BFR90AContextual Info: BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case TO 50 |
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BFR90A BFR90A D-74025 17-Apr-96 | |
BF996S
Abstract: GPS25 829 Tetrode
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BF996S BF996S 30the D-74025 17-Apr-96 GPS25 829 Tetrode | |
BFP92AContextual Info: BFP92A Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features D High power gain D Low noise figure D High transition frequency 2 3 1 4 94 9279 Marking: 92 V Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter |
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BFP92A D-74025 17-Apr-96 BFP92A | |
telefunken
Abstract: BFP181T
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BFP181T D-74025 17-Apr-96 telefunken BFP181T | |
BFR90 application
Abstract: BFR90 transistor BFR90 BFR90 amplifier
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BFR90 BFR90 D-74025 17-Apr-96 BFR90 application BFR90 transistor BFR90 amplifier | |
BFR183T
Abstract: Telefunken
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BFR183T D-74025 17-Apr-96 BFR183T Telefunken | |
BFP280TContextual Info: BFP280T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications D Low noise figure |
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BFP280T D-74025 17-Apr-96 BFP280T | |
BFP183T
Abstract: marking 83 Telefunken
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BFP183T D-74025 17-Apr-96 BFP183T marking 83 Telefunken | |
Contextual Info: •miS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. — .— LOC ALL RIGHTS RESERVED. CE DIST REVISIONS 16 LTR T DESCRIPTION REVISED PER DATE 0A40-0173-05 OWN 06APR05 APVD JWD JD D D L 0.20 + 0.05-0.00 [7.87+2.00-0.0] |
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0A40-0173-05 06APR05 | |
NPN planar RF transistorContextual Info: Tem ic BFP280T Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Jk For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features • Low power applications |
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BFP280T 1S21e 17-Apr-96 NPN planar RF transistor | |
BFP182T
Abstract: marking 82
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BFP182T D-74025 17-Apr-96 BFP182T marking 82 | |
BFP67
Abstract: BFP67R
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BFP67/BFP67R BFP67 BFP67R D-74025 17-Apr-96 | |
BFR96
Abstract: BFR96T
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BFR96T BFR96T D-74025 17-Apr-96 BFR96 | |
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09 66 563 681
Abstract: silicon npn planar rf transistor sot 143 BFS17A ic 565 features RF NPN POWER TRANSISTOR 3 GHZ 420 NPN Silicon RF Transistor marking E5 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17AR
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BFS17A/BFS17AR BFS17A BFS17AR D-74025 17-Apr-96 09 66 563 681 silicon npn planar rf transistor sot 143 ic 565 features RF NPN POWER TRANSISTOR 3 GHZ 420 NPN Silicon RF Transistor marking E5 RF NPN POWER TRANSISTOR 2.5 GHZ | |
BFR181T
Abstract: Telefunken
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BFR181T D-74025 17-Apr-96 BFR181T Telefunken | |
BFR280TContextual Info: BFR280T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications D Low noise figure |
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BFR280T D-74025 17-Apr-96 BFR280T | |
BFW92
Abstract: telefunken telefunken IC
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BFW92 BFW92 D-74025 17-Apr-96 telefunken telefunken IC | |
BFR92A
Abstract: sot-23 transistor p2 marking BFR92AR
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BFR92A/BFR92AR BFR92A BFR92AR D-74025 17-Apr-96 sot-23 transistor p2 marking | |
BFR92R
Abstract: BFR92 transistor bfr92
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BFR92/BFR92R BFR92 BFR92R D-74025 17-Apr-96 transistor bfr92 | |
BFP93AContextual Info: BFP93A Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 3 4 94 9279 Marking: FE Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter |
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BFP93A D-74025 17-Apr-96 BFP93A | |
BFQ67
Abstract: temic 0675
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BFQ67 D-74025 17-Apr-96 BFQ67 temic 0675 | |
F394Contextual Info: THIS DRAWING 15 UNPUBUSHED. COPYRIGHT 19 RELEASED FDR PUBLICATION BY AMP INCORPORATED. .19 LOC ALL RIGHTS RESERVED. CE DIST REVISIONS 16 LTR DESCRIPTION DATE REV PER 0 A 0 0 - 0 1 6 3 - 0 0 1. -0 .1 5 ± 0 .0 3 D IM E N S IO N S IN [ ] ARE IN 01MAR00 APVD |
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01MAR00 r3937 ri96S 17APR96 23APR96 23APR9B 23FEB95 22FEB00 F394 | |
Contextual Info: Temic BFP181T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features |
OCR Scan |
BFP181T pr-96 17-Apr-96 |