180N085 Search Results

J9100

Abstract: J 9100 D 819
Contextual Info: □ IXYS HHifl JL æ * X HiPerFET Power MOSFETs IXFR 180N085 ISOPLUS247™ Electrically Isolated Back Surface V DSS = 85 V 180 A ^D25 RDS(on) = 7 mQ ” trr < 250 ns Single MOSFET Die Preliminary data sheet Symbol TestConditions Maximum Ratings V DSS

Contextual Info: HiPerFETTM Power MOSFETs IXFR 180N085 TM ISOPLUS247 Electrically Isolated Back Surface VDSS = 85 V ID25 = 180 A RDS(on) = 7 mW Single MOSFET Die trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

I9100

Contextual Info: Advanced Technical Information □ IX Y S IXFK 180N085 IXFX 180N085 HiPerFET Power MOSFETs = 'd25 = Vpss R DS on = Single MOSFET Die ?D Symbol TestConditions V v DGR Tj = 25°C to 150°C Tj = 25°C to 150°C; RGS = 1 Mß VGS V GSM ^D25 I* E* E as Maximum Ratings

Contextual Info: Advanced Technical Information IXFK 180N085 IXFX 180N085 HiPerFETTM Power MOSFETs RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings VGS VGSM 85 85 V V Continuous Transient ±20 ±30

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N085 IXFX 180N085 VDSS ID25 RDS on Single MOSFET Die = 85 V = 180 A = 7 mW trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: HiPerFETTM Power MOSFETs IXFR 180N085 ISOPLUS247TM Electrically Isolated Back Surface VDSS = 85 V ID25 = 180 A RDS(on) = 7 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

180N085

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N085 IXFX 180N085 VDSS ID25 RDS on Single MOSFET Die = 85 V = 180 A = 7 mW trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: HiPerFETTM Power MOSFETs IXFR 180N085 ISOPLUS247TM Electrically Isolated Back Surface VDSS = 85 V ID25 = 180 A 7 mW RDS(on) = trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

12N60c equivalent

Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Contextual Info: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

ixta180n085

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET 180N085T7 VDSS ID25 RDS on = 85 V = 180 A ≤ 5.5 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)