180N10 Search Results

180N10

Contextual Info: Advanced Technical Information IXFX 180N10 IXFK 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient

Contextual Info: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS

180N10

Abstract: 125OC
Contextual Info: IXFK 180N10 IXFX 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V

Contextual Info: IXFE 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single Die MOSFET = 100 V = 176 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS

Contextual Info: mxYS Advanced Technical Information HiPerFET Power MOSFET IXFN 180N10 DSS I D25 RDS on Single MOSFET Die Tj = 25°C to 150°C Tj = 25°C to 150°C, Rgs = 1M£2 100 100 V V Vos« Continuous Transient ±20 ±30 V V Tc =25°C Terminal (current limit) T 0 = 25° C; pulse width limited by TJM

Contextual Info: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 100 100 miniBLOC, SOT-227 B (IXFN)

Contextual Info: Advanced Technical Information HiPerFET Power MOSFETs IXFR 180N10 V DSS = 100 ISOPLUS247™ ^D25 ” 165 VDSS ^ = 25°Cto150°C Tj = 25°Cto 150°C; RGS= 1 M il 100 100 V V Continuous Transient +20 ±30 V V '*n Tc = 25° C MOSFET chip capability External lead (current limit)

180N10

Abstract: IXFN 180N10 SOT-227 Package 125OC IXFN180N10
Contextual Info: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS

Tf 227

Contextual Info: Advanced Technical Information IXFN 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V

IXFN180N10

Abstract: ISOPLUS-227 180N10
Contextual Info: IXFE 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single Die MOSFET = 100 V = 176 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS

180N103

Contextual Info: 180N103 AC-DC 180Watts Single output power supply Ver.0 FEATURES ● Applications:POSPoE、Industry ● High Efficiency ● ZVS technology to reduce power dissipation ● Protections:OVP、OCP、SCP Recovery ● Active:PFC ● MTBF > 300,000 hours at 25℃ full load

180n10

Abstract: IXFK 180N10
Contextual Info: HiPerFETTM Power MOSFETs IXFK 180N10 IXFX 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 100 100

180N10

Contextual Info: HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 V A 8 mW Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

180n10

Abstract: 125OC
Contextual Info: HiPerFETTM Power MOSFETs IXFK 180N10 IXFX 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 100 100

Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 180N10 IXFK 180N10 ID25 = 100 V = 180 A 8 mQ DS on Single MOSFET Die trr < 250 ns » Maximum Ratings PLUS247™ Symbol Test Conditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i

Contextual Info: IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 180N10 IXFK 180N10 Single M O S FE T D ie Symbol Test Conditions v T j DSS 100 100 V V Continuous Transient i20 i30 V V T0 = 25° C MOSFET chip capability External lead (current limit) Tc =25°C, Notel

IXFN 180N10

Abstract: 180n10
Contextual Info: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 100 100 miniBLOC, SOT-227 B (IXFN)

STH180N10F3-2

Abstract: 180N10F3 STH180N10 180n10 14933 01-Aug-2008 STP180N10F3
Contextual Info: 180N10F3-2 180N10F3 N-channel 100 V, 3.2 mΩ, 180 A STripFET Power MOSFET H2PAK, TO-220 Features Type VDSS RDS on max. ID 180N10F3-2 100 V 4 mΩ 180 A 180N10F3 100 V 4.8 mΩ 120 A 2 3 3 • Ultra low on-resistance ■ 100% avalanche tested

180N10N

Abstract: IEC61249-2-21 IPP180N10N3 JESD22 PG-TO220-3 marking D33 IPI180N10N3 IPP180N10N3G IPI180N10N3 G
Contextual Info: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature

STH180N10F3-2

Abstract: sth180n10f3 STH180N10
Contextual Info: 180N10F3-2 N-channel 100 V, 3.9 mΩ, 180 A, H²PAK-2 STripFET III Power MOSFET Features Order codes VDSS RDS on max. ID 180N10F3-2 100 V 4.5 mΩ 180 A • Ultra low on-resistance ■ 100% avalanche tested TAB 2 Applications ■ 3 1 H2PAK-2 High current switching applications

Contextual Info: Ordering number : EN*A2285 180N10B Advance Information http://onsemi.com Power MOSFET 100V, 3.0mΩ, 180A, N-Channel Features • Ultra Low On-Resistance • Low Gate Charge • Pb-free and RoHS Compliance • High Speed Switching • 100% Avalanche Tested

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

180N10N

Abstract: IPP180N10N3 JESD22 PG-TO220-3 d33 marking 180N10 IPI180N10N3
Contextual Info: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature

12N60c equivalent

Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Contextual Info: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t