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    180N10N Search Results

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    180N10N Price and Stock

    Rochester Electronics LLC IPA180N10N3GXKSA1

    28A, 100V, 0.018OHM, N-CHANNEL,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPA180N10N3GXKSA1 Bulk 791 327
    • 1 -
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    • 1000 $0.92
    • 10000 $0.92
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    Infineon Technologies AG IPP180N10N3GXKSA1

    MOSFET N-CH 100V 43A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP180N10N3GXKSA1 Tube 148 1
    • 1 $1.33
    • 10 $1.33
    • 100 $0.6701
    • 1000 $0.54326
    • 10000 $0.46212
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    Avnet Americas IPP180N10N3GXKSA1 Tube 1,900 16 Weeks 1
    • 1 $0.36202
    • 10 $0.35894
    • 100 $0.34045
    • 1000 $0.34045
    • 10000 $0.34045
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    Mouser Electronics IPP180N10N3GXKSA1 1,035
    • 1 $1.11
    • 10 $0.891
    • 100 $0.61
    • 1000 $0.515
    • 10000 $0.462
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    Newark IPP180N10N3GXKSA1 Bulk 1,410 1
    • 1 $1.32
    • 10 $1.09
    • 100 $0.85
    • 1000 $0.586
    • 10000 $0.501
    		Buy Now
    Rochester Electronics IPP180N10N3GXKSA1 11,441 1
    • 1 -
    • 10 -
    • 100 $0.6261
    • 1000 $0.5197
    • 10000 $0.4633
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    TME IPP180N10N3GXKSA1 1
    • 1 $1.12
    • 10 $0.87
    • 100 $0.7
    • 1000 $0.66
    • 10000 $0.66
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    EBV Elektronik IPP180N10N3GXKSA1 17 Weeks 500
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    IBS Electronics IPP180N10N3GXKSA1 500
    • 1 -
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    • 1000 $0.5785
    • 10000 $0.546
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    Infineon Technologies AG IPD180N10N3GBTMA1

    MOSFET N-CH 100V 43A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () IPD180N10N3GBTMA1 Reel
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    IPD180N10N3GBTMA1 Digi-Reel
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    IPD180N10N3GBTMA1 Cut Tape
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    Avnet Americas IPD180N10N3GBTMA1 Reel 111 Weeks 2,500
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    EBV Elektronik IPD180N10N3GBTMA1 143 Weeks 2,500
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    Infineon Technologies AG IPA180N10N3GXKSA1

    MOSFET N-CH 100V 28A TO220-FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPA180N10N3GXKSA1 Tube
    • 1 -
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    Rochester Electronics IPA180N10N3GXKSA1 5,369 1
    • 1 -
    • 10 -
    • 100 $0.8824
    • 1000 $0.7324
    • 10000 $0.653
    		Buy Now
    EBV Elektronik IPA180N10N3GXKSA1 143 Weeks 50
    • 1 -
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    Infineon Technologies AG IPI180N10N3GXKSA1

    MOSFET N-CH 100V 43A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPI180N10N3GXKSA1 Tube 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.95874
    • 10000 $0.95874
    		Buy Now
    Rochester Electronics IPI180N10N3GXKSA1 6,050 1
    • 1 -
    • 10 -
    • 100 $0.9745
    • 1000 $0.8088
    • 10000 $0.7211
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    TME IPI180N10N3GXKSA1 478 1
    • 1 $1.21
    • 10 $1.05
    • 100 $0.84
    • 1000 $0.68
    • 10000 $0.68
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    EBV Elektronik IPI180N10N3GXKSA1 143 Weeks 500
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    180N10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    180N10N

    Abstract: IEC61249-2-21 IPP180N10N3 JESD22 PG-TO220-3 marking D33 IPI180N10N3 IPP180N10N3G IPI180N10N3 G
    Contextual Info: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPP180N10N3 IPI180N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO262-3 180N10N 180N10N IEC61249-2-21 JESD22 PG-TO220-3 marking D33 IPP180N10N3G IPI180N10N3 G PDF

    180N10N

    Abstract: IPP180N10N3 JESD22 PG-TO220-3 d33 marking 180N10 IPI180N10N3
    Contextual Info: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPP180N10N3 IPI180N10N3 O-263 PG-TO220-3 PG-TO262-3 180N10N 180N10N JESD22 PG-TO220-3 d33 marking 180N10 PDF

    Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 18 mW ID 28 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA180N10N3 PG-TO220-FP 180N10N PDF

    DIODE D28

    Abstract: d28 diode 180n10n JESD22 DD-50 IPA180N10N3
    Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 18 mΩ ID 28 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPA180N10N3 PG-TO220-FP 180N10N DIODE D28 d28 diode 180n10n JESD22 DD-50 PDF

    180N10N

    Abstract: 180n10 JESD22 d33 marking
    Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPD180N10N3 O-263 PG-TO252-3 180N10N 180N10N 180n10 JESD22 d33 marking PDF

    Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max TO-263 18 mW ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPD180N10N3 O-263 IEC61249-2-21 PG-TO252-3 180N10N PDF