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    180N10 Search Results

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    180N10 Price and Stock

    Infineon Technologies AG IPD180N10N3GATMA1

    MOSFET N-CH 100V 43A TO252-3
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    DigiKey IPD180N10N3GATMA1 Cut Tape 5,925 1
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    IPD180N10N3GATMA1 Reel 5,000 2,500
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    Avnet Americas IPD180N10N3GATMA1 Reel 16 Weeks 2,500
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    Mouser Electronics IPD180N10N3GATMA1 12,417
    • 1 $0.65
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    Bristol Electronics IPD180N10N3GATMA1 324
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    Rochester Electronics IPD180N10N3GATMA1 1
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    Chip1Stop IPD180N10N3GATMA1 Cut Tape 2,273
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    EBV Elektronik IPD180N10N3GATMA1 17 Weeks 2,500
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    Win Source Electronics IPD180N10N3GATMA1 23,700
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    Littelfuse Inc IXTP180N10T

    MOSFET N-CH 100V 180A TO220AB
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    DigiKey IXTP180N10T Tube 3,040 1
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    • 100 $3.3128
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    Infineon Technologies AG IAUA180N10S5N029AUMA1

    MOSFET_(75V 120V( PG-HSOF-5
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    DigiKey IAUA180N10S5N029AUMA1 Cut Tape 1,926 1
    • 1 $4.06
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    • 1000 $1.4405
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    IAUA180N10S5N029AUMA1 Digi-Reel 1,926 1
    • 1 $4.06
    • 10 $2.672
    • 100 $4.06
    • 1000 $1.4405
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    Mouser Electronics IAUA180N10S5N029AUMA1 1,677
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    Newark IAUA180N10S5N029AUMA1 Cut Tape 2,000 1
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    Rochester Electronics IAUA180N10S5N029AUMA1 643 1
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    Chip1Stop IAUA180N10S5N029AUMA1 Cut Tape 2,000
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    EBV Elektronik IAUA180N10S5N029AUMA1 27 Weeks 2,000
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    Infineon Technologies AG IPB180N10S402ATMA1

    MOSFET N-CH 100V 180A TO263-7
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    DigiKey IPB180N10S402ATMA1 Digi-Reel 1,859 1
    • 1 $6
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    IPB180N10S402ATMA1 Cut Tape 1,859 1
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    IPB180N10S402ATMA1 Reel 1,000 1,000
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    Avnet Americas IPB180N10S402ATMA1 Reel 1,000 12 Weeks 1,000
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    Mouser Electronics IPB180N10S402ATMA1 1,365
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    Newark IPB180N10S402ATMA1 Cut Tape 6,703 1
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    Rochester Electronics IPB180N10S402ATMA1 2,680 1
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    EBV Elektronik IPB180N10S402ATMA1 13 Weeks 1,000
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    Infineon Technologies AG IPB180N10S403ATMA1

    MOSFET N-CH 100V 180A TO263-7
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    DigiKey IPB180N10S403ATMA1 Cut Tape 1,140 1
    • 1 $6.26
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    IPB180N10S403ATMA1 Digi-Reel 1,140 1
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    Find more 180N10 price and stock on Findchips.com

    180N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    180N10

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFX 180N10 IXFK 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient


    Original     		PDF 180N10 180N10 247TM O-264

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS


    Original     		PDF 180N10 OT-227 E153432 125OC

    180N10

    Abstract: 125OC
    Text: IXFK 180N10 IXFX 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V


    Original     		PDF 180N10 125OC 180N10 125OC

    Untitled

    Abstract: No abstract text available
    Text: IXFE 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single Die MOSFET = 100 V = 176 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS


    Original     		PDF 180N10 227TM IXFN180N10 728B1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 100 100 miniBLOC, SOT-227 B (IXFN)


    Original     		PDF 180N10 OT-227 E15000 100kHz 125OC

    180N10

    Abstract: IXFN 180N10 SOT-227 Package 125OC IXFN180N10
    Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS


    Original     		PDF 180N10 OT-227 E153432 125OC 180N10 IXFN 180N10 SOT-227 Package 125OC IXFN180N10

    Tf 227

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFN 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V


    Original     		PDF 180N10 OT-227 E153432 Tf 227

    IXFN180N10

    Abstract: ISOPLUS-227 180N10
    Text: IXFE 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single Die MOSFET = 100 V = 176 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS


    Original     		PDF 180N10 227TM IXFN180N10 728B1 ISOPLUS-227 180N10

    180N103

    Abstract: No abstract text available
    Text: 180N103 AC-DC 180Watts Single output power supply Ver.0 FEATURES ● Applications:POSPoE、Industry ● High Efficiency ● ZVS technology to reduce power dissipation ● Protections:OVP、OCP、SCP Recovery ● Active:PFC ● MTBF > 300,000 hours at 25℃ full load


    Original     		PDF 180N103 180Watts 2x127x35 264Vacï 115Vac 60Amp 120Vac,

    180n10

    Abstract: IXFK 180N10
    Text: HiPerFETTM Power MOSFETs IXFK 180N10 IXFX 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 100 100


    Original     		PDF O-264 180N10 180N10 100kHz 125OC IXFK 180N10

    180N10

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 V A 8 mW Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 180N10 ISOPLUS247TM 247TM

    180n10

    Abstract: 125OC
    Text: HiPerFETTM Power MOSFETs IXFK 180N10 IXFX 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 100 100


    Original     		PDF 180N10 247TM 125OC 180n10 125OC

    180N10

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 V A 8 mW Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 180N10 ISOPLUS247TM

    IXFN 180N10

    Abstract: 180n10
    Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 100 100 miniBLOC, SOT-227 B (IXFN)


    Original     		PDF 180N10 OT-227 100kHz 125OC IXFN 180N10 180n10

    180N10N

    Abstract: IEC61249-2-21 IPP180N10N3 JESD22 PG-TO220-3 marking D33 IPI180N10N3 IPP180N10N3G IPI180N10N3 G
    Text: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPP180N10N3 IPI180N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO262-3 180N10N 180N10N IEC61249-2-21 JESD22 PG-TO220-3 marking D33 IPP180N10N3G IPI180N10N3 G

    STH180N10F3-2

    Abstract: sth180n10f3 STH180N10
    Text: 180N10F3-2 N-channel 100 V, 3.9 mΩ, 180 A, H²PAK-2 STripFET III Power MOSFET Features Order codes VDSS RDS on max. ID 180N10F3-2 100 V 4.5 mΩ 180 A • Ultra low on-resistance ■ 100% avalanche tested TAB 2 Applications ■ 3 1 H2PAK-2 High current switching applications


    Original     		PDF STH180N10F3-2 SC06140 180N10F3 STH180N10Fin STH180N10F3-2 sth180n10f3 STH180N10

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2285 180N10B Advance Information http://onsemi.com Power MOSFET 100V, 3.0mΩ, 180A, N-Channel Features • Ultra Low On-Resistance • Low Gate Charge • Pb-free and RoHS Compliance • High Speed Switching • 100% Avalanche Tested


    Original     		PDF A2285 NDPL180N10B A2285-5/5

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    180N10N

    Abstract: IPP180N10N3 JESD22 PG-TO220-3 d33 marking 180N10 IPI180N10N3
    Text: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPP180N10N3 IPI180N10N3 O-263 PG-TO220-3 PG-TO262-3 180N10N 180N10N JESD22 PG-TO220-3 d33 marking 180N10

    Untitled

    Abstract: No abstract text available
    Text: mxYS Advanced Technical Information HiPerFET Power MOSFET IXFN 180N10 DSS I D25 RDS on Single MOSFET Die Tj = 25°C to 150°C Tj = 25°C to 150°C, Rgs = 1M£2 100 100 V V Vos« Continuous Transient ±20 ±30 V V Tc =25°C Terminal (current limit) T 0 = 25° C; pulse width limited by TJM


    OCR Scan     		PDF IXFN180N10 OT-227

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFET Power MOSFETs IXFR 180N10 V DSS = 100 ISOPLUS247™ ^D25 ” 165 VDSS ^ = 25°Cto150°C Tj = 25°Cto 150°C; RGS= 1 M il 100 100 V V Continuous Transient +20 ±30 V V '*n Tc = 25° C MOSFET chip capability External lead (current limit)


    OCR Scan     		PDF 180N10 ISOPLUS247TM Cto150

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 180N10 IXFK 180N10 ID25 = 100 V = 180 A 8 mQ DS on Single MOSFET Die trr < 250 ns » Maximum Ratings PLUS247™ Symbol Test Conditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i


    OCR Scan     		PDF 180N10 PLUS247â

    Untitled

    Abstract: No abstract text available
    Text: IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 180N10 IXFK 180N10 Single M O S FE T D ie Symbol Test Conditions v T j DSS 100 100 V V Continuous Transient i20 i30 V V T0 = 25° C MOSFET chip capability External lead (current limit) Tc =25°C, Notel


    OCR Scan     		PDF 180N10 180N10 247TM Cto150 O-264

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan     		PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q