1812SMS Search Results

Contextual Info: • P* Series RF Inductors 0603HS 0805CS, HS 0805HT 1008CT 1008CS, HQ, HS, LS 1008HT 1206CS 1812CS, LS 1812WBT S pring Inductors 0906-X 1606-X AXXT BXXT 1812SMS 132-XXSM Power Magnetics DO1608C DS1608C DT1608C DO3308P D03316P DS3316P DT3316P DO3340P DO5022P

Contextual Info: 89 Thpe and Reel Specifications Series RF Inductors 0603CS, HS 0805CS, HS 0805HT 1008CT 1008CS, HQ, HS, LS 1008HT 1206CS 1812CS, LS 1812WBT Spring Inductors 0906-X 1606-X AXXT BXXT 1812SMS 132-XXSM Power Magnetics DO1608C DS1608C DT1608C DO3308P D03316P/D03316P-HC

0402CS

Abstract: 0603CS 0805CS 0805HT 1008CS 1008CT 1812CS 25001
Contextual Info: Document 173 TapeandReelSpecifications Series RF Inductors 0402CS paper 0603CS (plastic) 0603CS, HC (paper) 0805CS, HQ, HS 0805HT 1008CT 1008CS, HQ, HS, LS 1008HT 1206CS 1812CS, LS 1812WBT, WBTS TTWB WBxxxxSM Spring Inductors 0906-x 1606-x AxxT BxxT 1812SMS

Contextual Info: Document 173 TapeandReelSpecifications Series RF Inductors 0402CS paper 0603CS (plastic) 0603CS, HC (paper) 0805CS, HQ, HS 0805HT 1008CT 1008CS, HQ, HS, LS 1008HT 1206CS 1812CS, LS 1812WBT, WBTS TTWB WBxxxxSM Spring Inductors 0906-x 1606-x AxxT BxxT 1812SMS

Contextual Info: TapeandReelSpecifications Series RF Inductors 0603HS 0805CS, HS 0805HT 1008CT 1008CS, HQ, HS, LS 1008HT 1206CS 1812CS, LS 1812WBT Spring Inductors 0906-X 1606-X AXXT BXXT 1812SMS 132-XXSM Power Magnetics DO1608C DS1608C DT1608C DO3308P D03316P DS3316P DT3316P

Contextual Info: 6 TapeandReel Specifications Series RF Inductors 0603CS, HS 0805CS, HS 0805HT 1008CT 1008CS, HQ, HS, LS 1008HT 1206CS 1812CS, LS 1812WBT Spring Inductors 0906-X 1606-X AXXT BXXT 1812SMS 132-XXSM Power Magnetics DO1608C DS1608C DT1608C DO3308P D03316P/D03316P-HC

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with

Contextual Info: D o c u m e n t 1 84-1 “Midi Spring” SurfaceMount Inductors This family of surface mount “midi spring” inductors is designed for higher current applications up to 3.5 Amps than our smaller series. It also provides higher Q factors at lower frequencies.

Contextual Info: 1 Index INDEX BY PART NUMBER ON NEXT PAGE RF Inductors Power Magnetics Filters Surface Mount Surface Mount Surface mount Air core inductors “Micro” 0906 S e rie s.36 “Micro” 1606 S e rie s.36 “Mini” AOXT S e rie s .38

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

Contextual Info: Document 184-1 MidiSpring AirCoreInductors This family of surface mount Midi Spring™ inductors is designed for higher current applications up to 3.5 Amps than our smaller series. It also provides higher Q factors at lower frequencies. Like all Coilcraft “spring” inductors, these parts

G2225X7R225KT3AB

Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial

C8450

Abstract: MRF5S4140H
Contextual Info: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

Contextual Info: Document 184-1 Midi Spring Air Core Inductors This family of surface mount Midi Spring® inductors is designed for higher current applications up to 3.5 Amps than our smaller series. It also provides higher Q factors at lower frequencies. Like all Coilcraft “spring” inductors, these parts provide

Contextual Info: Document 184-1 Midi Spring Air Core Inductors This family of surface mount Midi Spring® inductors is designed for higher current applications up to 3.5 Amps than our smaller series. It also provides higher Q factors at lower frequencies. Like all Coilcraft “spring” inductors, these parts provide

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

SEMICONDUCTOR J598

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

AN3107

Abstract: 1812SMS-82NJLB AN1351 AN2208 AN2684 JESD22 JESD22-A114 VNI4140K
Contextual Info: AN3107 Application note ESD immunity-level optimization of a high-side switch application based on the VNI4140K Introduction The VNI4140K is a quad-channel high-side driver designed for industrial applications. It is a monolithic device manufactured using STMicroelectronics’ most advanced VIPower

RFHA1023

Abstract: SEMICONDUCTOR J598
Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

Contextual Info: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium

Contextual Info: STEVAL-TDR003V1 2-stage RF power amp: PD84001 + PD54008L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Current < 1.5 A ■ Input power < 10 dBm

DB-54003L-175

Abstract: DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
Contextual Info: DB-54003L-175 RF power amplifier using 1x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.5 V ■ Output power: > 5 W ■ Efficiency: 64% - 73% ■ Load mismatch: 20:1