18160B Search Results

Contextual Info: VG 26 V (S)18160B 1,048,576 x 16-Bit CMOS Dynamic RAM VIS H Description The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to be used

TC5118160B

Contextual Info: TOSHIBA clüi:î7E4fi 0 0 20 3 0 1 552 • 18160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description Features 16M The TC 18160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The T C 51 18160BJ/BFT

Contextual Info: •HYUNDAI H Y 51V 18160B S eries 1M x 16-bit CM OS DRAM with 2CAS DESCRIPTION The 18160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The 18160B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques

GM71C18160BJ6

Abstract: GM71C18160B gm71c18160bj GM71C18160BJ7 GM71C18160BT6 GM71CS18160BL LG Semicon GM71C18160BJ-6
Contextual Info: @ LG Semicon. Co. LTD. The G M 71C S 18160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)18160B/BL has realized higher density, higher performance and various functions by utilizing a d v a n c e d C M O S p r o c e s s te c h n o lo g y . T h e

s23a4

Abstract: M5M4V18-60B8 M5M4V18
Contextual Info: M 5 M 4 V 1 8 1 6 0 B J ,T P ,R T - 6 , - 7 ,- 8 , - 6 S v 7 S ,- 8 S FAST PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT DYNAMiC RAM DESCRIPTION This is a family of 1048576-w ord by 16-bit dynamic RAMS, fabricated with the high performance CM OS process,and is ideal for

Contextual Info: DRAM 6 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, T a=0°C Organization (Wxb) Access Time max. (ns) Part Number Power Consumption max. (mW) Cycle Time min. (ns) M B81V 16 160 A -60 60[15]*1 1 10[40]"3 324 M B81V 16 160 A -70 70(17]*1 130[45]*3

SIEMENS tle 420

Abstract: ic 7014
Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 18160BSJ-50/-60/-70 Advanced Inform ation I 048 576 words by 16-bit organization 0 to 70 C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)

Contextual Info: Barrier Block Accessories Fanning Strips Catalog Numbers and Dimensions for Fanning Strips for 140 Series Terminal Blocks Straight Type Dimensions Catalog No. 6-160B-R Catalog No. 6-160-R Ordering Information No. of Terminals 2 3 4 5 6 7 8 9 10 11 12 13 14

fopf

Abstract: ob35l0s a 3116 HYB3116160BSJ-50 HYB3116160BSJ-60 HYB3116160BSJ-70 HYB3118160BSJ-50 HYB3118160BSJ-60 HYB3118160BSJ-70 71ST5
Contextual Info: S IE M E N S 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 18160BSJ-50/-60/-70 Advanced Inform ation Output unlatched at cycle end allows tw o ­ dim ensional chip selection Read, write, read-m odify-write, CAS-before-RAS refresh, RAS-only refresh,

NN5118160A

Abstract: NN5118160B WA137
Contextual Info: NN5118160A / 18160B series Fast Page Mode CMOS 1Mx 16bit Dynamic RAM NPN a DESCRIPTION The NN5118160A / 18160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN5118160A / B series is fabricated with advanced CMOS technology and designed with

Contextual Info: HM51W16160B Series 18160B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-538 Z Preliminary Rev. 0.0 Mar. 11, 1996 Description The Hitachi HM51W16160B Series, 18160B Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology

BEDO RAM

Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Contextual Info: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE

Contextual Info: SIEMENS 2M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 Advanced Inform ation • 2 097 152 w ords by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e (-50 version) 60 ns access time

Contextual Info: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70

DC-37PTI

Abstract: ms24266r bacc63bn LGA 478 SOCKET PIN LAYOUT 94v-0 lcd display BACC45 BACC63CB bacc10gh BACC63BV MIL-C-27500
Contextual Info: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.

5-176-3 terminal block

Abstract: mini circuits 15542 MS14141 DIN 18541 8-32X3 s31512 mini 15542 P-306-CCE 5-140-Y E61245
Contextual Info: COMMERCIAL Barrier Blocks Circular Mini DIN BNC Jones Plugs Edge Connectors Commercial [.050” 1.27mm Density Solder Introduction Cup/Wire D-Microminiature] Cinch Commercial Products, consisting of Jones Plugs and Sockets, Barrier Blocks, Edge Cards, Two-Piece Commercial Dins,

DIN 41529

Abstract: bacc10 MIL-C-83513 connector BACC45FT BACC10GH BACC45FN S2402D PTI 30 040 ga BACC45FM cd 1191 acb
Contextual Info: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.

Contextual Info: - H Y U N D A I * 18160B,HY51 V I6160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

BACC63CB

Abstract: bacc63bv m32029 BACC45 BACC45FT M22759/33-26-9 BACC45FN BACC63BP MIL-C-39029/31 Cinch Connectors bacc45ft
Contextual Info: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.

Contextual Info: VG26 V (S)17800B 2,097,152 x 8-Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 2,097,152 words x 8 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to be used

Contextual Info: SIEMENS 1M X 32-Bit Dynamic RAM Module 2M X 16-Bit Dynamic RAM Module HYM 321000S/GS-50/-60 Advanced Inform ation • 1 048 576 words by 32-bit organization (alternative 2 097 152 w ords by 16-bit) • Fast access and cycle tim e 50 ns access time 90 ns cycle tim e (-50 version)

VG2618160

Abstract: HA2010
Contextual Info: viswi V M 18160B ,V M 18160B 1M ,2M x 32-B it Dynamic RAM Module_ Description The V M 18160B and 18160B are 1M x 32-bit and 2M x 32-bit dynam ic RAM modules. It is m ounted by 2/4 pieces o f 1M x 16 DRAM 18160B ,and each in a standard

Contextual Info: DURA-CON Barrier Blocks High Reliability Accessories All-Plastic Solder Terminals 3/4W, Y, and W Optional Terminals for use with Cinch terminal blocks. See chart for type and dimensions. Below 2 Ordering Information "3/4 W" Terminals - Dimensions Catalog

TC5118160

Abstract: TC5118160B
Contextual Info: TOSHIBA 18160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The TC 18160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The TC 18160BJ/BFT utilizes Toshiba's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating