1N459 Search Results

Contextual Info: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. lo vF @ If IR @ VR cT V (mA) (V) (mA) ("A) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200

Contextual Info: 1N4590 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current150 @Temp (øC) (Test Condition)110 V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.0k V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)150 @Temp. (øC) (Test Condition)110

1n457a equivalent

Abstract: BAV45 diode pico-amp low-leakage silicon diode 1N3595 1N457A 1N459A 1N485B 1N6263 CDH300
Contextual Info: Silicon Diodes DO-35 Case Continued Low Leakage Diodes TYPE NO. 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 VRRM (V) MAX 70 200 200 150 150 150 IO (mA) MAX 200 200 200 150 200 200 VF (V) MAX 1.0 1.0 1.0 1.0 1.0 1.05 @ IF (mA) 100 100 100 200 200 200 IR @ VR

MMBD1502A

Abstract: 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 1N3070 FOH300A 1N485B 1N486B
Contextual Info: hot a m bSDHBD D03TS07 423 NATL VRRM Irrm Volts Min Device 250 1N486B BAV21 1N3070 1N459 1N459A 1N485B 1N4938 1S923 BAS21 BAV20 FDH400 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1502A MMBD1503A MMBD1504A MMBD1505A 1N3595 1N458A 1N6099 200

Contextual Info: 1N4594 R thru 1N4596(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =150 A Features • High Surge Capability • Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 2 1 2 1 1 1 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Contextual Info: Silicon Diodes DO-35 Case £3 Low Leakage Diodes lo Vf @ If IR @ VR cT V (mA) (V) (mA) (nA) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200 1.0

Contextual Info: 1N459M Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current40m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage230“ I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0m @Temp. (øC) (Test Condition)

1N485

Abstract: 1N482 1n456 Q 0265 R 1n461 1n4828 1n462 1n464 1N484A texas instruments 1N457A
Contextual Info: TYPES 1N456 THRU 1N459, 1N461 THRU 1N464, 1N482 THRU 1N485, AND SUFFIX VERSIONS SILICON GENERAL PURPOSE DIODES B U L L E T IN N O . D L - S 71 1 1 5 0 8 , S E P T E M B E R 1971 VRM w kg • • • 25 to 185 Volts • Rugged Double-Plug Construction •

1n456

Abstract: 25nA 1N458 1N457
Contextual Info: DIODE 1N456 1N457; JAN 1N457 1N458; JAN 1N458 1N459; JAN 1N459 Low Current FEATURES • Metallurgical Bond • Qualified to MIL-S-1950W193 • Planar Passivated Chip • DO-7 Package DESCRIPTION General purpose low current diode with high reliability characteristics

1n457

Abstract: n456a DSAIH00025333 1N456A
Contextual Info: B K C INTERNATIONAL □ 3E D I 117^^03 □□□□275 2 7 - - Ó / - Ó LOW LEAKAGE DIODES 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A ABSOLUTE MAXIMUM RATINGS • l„ • C 25 nA @ WIV 6.0 pF Temperatures Storage Temperature Range Maximum Junction Operating Temperature

1N459 equivalent

Abstract: 1N459 1N459A JAN1N459 PRF-19500
Contextual Info: FEATURES 1N459 • • • • • 1N459 AVAILABLE AS 1N459A, & AS 1N459 PER MIL-PRF-19500/193 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine, 8.3mS:

equivalent diode for 1n457

Contextual Info: 1N457A thru 1N459A Qualified Level: JAN Switching Diode Available on commercial versions Qualified per MIL-PRF-19500/193 DESCRIPTION These popular 1N457 – 1N459 series of JEDEC registered switching/signal diodes are metallurgically bonded. These small low capacitance diodes with very fast switching speeds

Contextual Info: 1N459 Low Leakage Diode. Working Inverse Voltage 175V. 1.94 Diodes Silicon Rectifie. Page 1 of 1 Enter Your Part # Home Part Number: 1N459 Online Store 1N459 Diodes Low Leakage Diode. Working Inverse Voltage 175V. Transistors Integrated Circuits Optoelectronics

Contextual Info: 1N4588 R thru 1N4593(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =150 A Features • High Surge Capability • Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 1 2 2 1 1 1 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

diode IN457

Abstract: JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier
Contextual Info: MIL SPECS IC|0Q0D1SS 0 Q QS 2M Q B | / NOTICE OF VALIDATION INCH-POUND MIL-S-19500/193C ER NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458, AND 1N459 Military specification MIL-S-19500/193C(ER), dated 15 September

1N456A

Abstract: 1N457 1N459a N457 1N456 1N457A 1N458 1N458A 1N459 low leakage diodes
Contextual Info: B K C INTERN ATI ONA L □ 3E LOW LEAKAGE DIODES D I 117^^03 □□□□275 5 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A ABSOLUTE MAXIMUM RATINGS • l„ • C 25 nA @ W IV 6.0 pF Temperatures Storage Temperature Range Maximum Junction Operating Temperature

Contextual Info: 1N459+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current40m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage200“ I(FSM) Max.(A) Pk.Fwd.Sur.Cur.40 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0m @Temp. (øC) (Test Condition)

Contextual Info: 1N4597 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current25m @Temp (øC) (Test Condition)40 V(RRM)(V) Rep.Pk.Rev. Voltage5.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.0¥ V(FM) Max.(V) Forward Voltage5.0 @I(FM) (A) (Test Condition)25m @Temp. (øC) (Test Condition)40’

Contextual Info: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. Vrrm l£> Vf @ If IR @ VR Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200

Contextual Info: 1N4588 R thru 1N4593(R) Silicon Standard Recovery Diode VRRM = 200 V - 800 V IF =150 A Features • High Surge Capability • Types from 200 V to 800 V VRRM DO-8 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode.

Contextual Info: 1N4594 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current150 @Temp (øC) (Test Condition)110 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.0k V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)150 @Temp. (øC) (Test Condition)110

Contextual Info: Standard Recovery Rectifiers I Part Number REC R4320 S4320 SDM15002 1N2440 1N2441 1N4589 R4330 S4330 1N2442 1N2443 1N4590 R4340 S4340 SDM15004 1N2444 1N4591 R4350 S4350 1N2445 1N4592 R4360 S4360 SDM15006 1N4593 R4380 S4380 SDMI 5008 1N4594 R43100 S43100 SDM15010

1n35

Contextual Info: Silicon D iodes DO-35 Case Low Leakage Diodes TYPE NO. •o VF @ IF IR V r Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200

equivalent diode for 1n457

Abstract: 1N457 equivalent 1n457a equivalent JESD282-B 1N457 1N458A
Contextual Info: 1N457A thru 1N459A Qualified Level: JAN Switching Diode Available on commercial versions Qualified per MIL-PRF-19500/193 DESCRIPTION These popular 1N457 – 1N459 series of JEDEC registered switching/signal diodes are metallurgically bonded. These small low capacitance diodes with very fast switching speeds