1B 220 50V Search Results

100v 4p7

Abstract: m3181 bz 103 c24 561 1kv 222 3KV 333 1kv 1N00 8121N 8P20 8171M
Contextual Info: Radial Lead Capacitors Marking and Ordering information Marking information All encapsulated capacitors are marked with:- Capacitance value, tolerance, rated d.c. voltage, dielectric, and where size permits Syfer logo. Example: 1000pF ±10% 50V 2X1 dielectric

8121M

Abstract: 8121N 1n00 8123Z
Contextual Info: Dipped Radial Lead Capacitors 50V - 200V Capacitance Table - Ultra-stable Dielectric C0G Size 8111M 50 Rated voltage d.c. Cap. range 3.9pF 4.7 5.6 6.8 8.2 10 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330 390 470 560 680 820 1.0nF 1.2 1.5 1.8

Contextual Info: SINGLE-PHASE FULL WAVE BRIDGE 6 AMPERES FOR P.C. BOARD AND HEAT SINK MOUNTING PRV/Leg 50V 100 V 200V Type No. 6PH05 6PH10 6PH20 '1 400V 600V 800V 1000V 6PH40 6PH60 6PH80 6PH100 ELECTRICAL CHARACTERISTICS PER LEG at T a = 25 °C Unless Otherwise Specified

syfer x7r capacitors variation over temperature

Abstract: CECC 32 100
Contextual Info: Multilayer Ceramic Capacitors Introduction Product Ranges Manufacturing Controls The standard Multilayer Ceramic product ranges offered by Syfer include: These ranges are available in a choice of dielectrics, voltages and capacitance tolerances. Particular importance is placed on the assurance of Quality

Contextual Info: EIN UNTERNEHMEN VON Allgemeine Angaben General Features Roederstein Einfuhrung / Introduction Scheibenkondensatoren / Disc capacitors Seite / Paqe 4 4 1. Nennwerte-Reihe / Nominal rate series 2. MeB- und Prufbedingungen Measuring and testing conditions 3. Kennzeichnung / Marking

Ceramic Singlelayer Capacitors

Abstract: IEC 384-14/2 X1 440 Y1 250 wkp 4n7 wko 400v 4n7 disc ceramic capacitor WKO 4n7 M X1 WYO 5n M 250 103 Ceramic Disc Capacitors 101 Ceramic Disc Capacitors 2n2, Y2 ±20%, 250V Y2 CLASS CAPACITOR wkp 2n2 m
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC SINGLELAYER CAPACITORS vishay DRALORIC vsD-db0012-0011 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

44358

Abstract: 107603 roederstein etqw capacitor tantalum ETQW 002D10 3G2216 Roederstein ELECTROLYTIC CAPACITOR tantalum roederstein tantalum ETQW1 68503
Contextual Info: VISHAY INTER/ ROEDERSTEIN b2E D • 7821^24 O Q O m L i D57 Tantalum Electrolytic Capacitor Sindered Anode, Solid Semiconductor Electrolyte, -125 C Tantalum capacitors with sintered anode and solid semiconductor electrolyte with flame retardant fluidized bed coating.

roederstein tantalum

Abstract: 70511 roederstein capacitor tantalum Roederstein ZR4040-2.5 LM136-2.5
Contextual Info: VI SH AY INTER / R O E D E R S T E I N b2E D • 7fl21b24 O G ü n ß b lOfl ■ Tantalum Electrolytic Capacitors Sintered Anode, Solid Semiconductor Electrolyte, +125°C Tantalum capacitors with sintered anode and solid semiconductor electrolyte, with flame retardant fluidized bed coating.

BC846A-G

Abstract: BC847A-G BC848A-G BC846B-G BC847B-G BC848B-G BC847C-G BC848C-G Small Signal Transistor BC8468
Contextual Info: Small Signal Transistor BC846A-G Thru. BC848C-G NPN RoHS Device Features -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC

BC846AW-G

Contextual Info: Small Signal Transistor BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature range: TJ, TSTG= -55 to +150°C

Contextual Info: Small Signal Transistor BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature range: TJ, TSTG= -55 to +150°C

TRANSISTOR SMD MARKING CODE p1

Abstract: TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28
Contextual Info: COMCHIP Small Signal Transistor SMD Diodes Specialist BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation O PCM: 0.15W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature

Contextual Info: Small Signal Transistor BC846A-G Thru. BC848C-G NPN RoHS Device Features -Power dissipation PCM: 0.20W (@TA=25 OC) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC

top223y

Abstract: Voltage Doubler application schematic diagram 200v dc voltage regulator UPR2D TRANSFORMER EI25 10 Panasonic 1000uf 200v TSD-1144 tsd1144 ECA1HFG221 flyback transformer pin configuration
Contextual Info: TABLE 1: ELECTRICAL SPECIFICATIONS AT 25 OC FIGURE 1: SCHEMATIC DIAGRAM SWITCHING TRANSFORMER DESIGNED FOR USE WITH POWER INTEGRATIONS TOP223Y. REFER TO APPLICATION CIRCUIT OF FIGURE 3. PARAMETER MIN. PRIMARY INDUCTANCE 3-1 VOLTAGE = 0.250Vrms FREQUENCY = 100 KHZ

Contextual Info: Roederstein Tantalum Capacitors Dipped 43 Tantalum Electrolytic Capacitors Sintered Anode, Solid Sem iconductor Electrolyte, +125°C Tantalum capacitors with sintered anode arid solid semiconductor electrolyte, with flame retardant fluidized bed coating. The ETPW type is an ideal component

1N4007

Abstract: TDA1175P
Contextual Info: ¿tZ » SGS-THOMSON Eiaö S (S [i[L[i T[S@K!lD®§ T D A 1175P LOW-NOISE VERTICAL DEFLECTION SYSTEM • COMPLETE VERTICAL DEFLECTION SYSTEM ■ LOW NOISE ■ SUITABLE FOR HIGH DEFINITION MONITORS ■ ESD PROTECTED DESCRIPTION The TDA1175Pis a monolithic integrated circuit in

capacitor 104 12KV

Abstract: 100v 4p7 capacitor 221 k 1kv capacitor 104 1KV 18NF 630V Y cap 10nF 1kV 220pf 15kv ceramic capacitor 10nF 1kV capacitor 560 pF 6kV 47NF 500V
Contextual Info: Radial Leaded capacitors Radial Leaded capacitors Dimensions - Dipped Radial Syfer Technology produces a wide range of dipped radial leaded capacitors. These are available in rated voltages of 50V up to 6kV. Although our catalogue range extends to 6kV, we are able to offer

17127

Abstract: EGNC210MK
Contextual Info: EGNC210MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.5dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Linear Gain : 17.5dB(typ.) @ f=0.9GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

EGNC210MK

Contextual Info: EGNC210MK GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 17.5dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

EGNC105MK

Contextual Info: EGNC105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 20dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGNC105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 51dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Linear Gain : 20dB(typ.) @ f=0.9GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

EGNC210MK

Abstract: JESD22-A114 EGNC210M EGNC210
Contextual Info: EGNC210MK GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 17.5dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

EGNC105MK

Abstract: hemt 105w JESD22-A114 0 280 130 094
Contextual Info: EGNC105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 20dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

8131M

Abstract: 180-nF 8121m capacitor npo 2.2NF 50V 5 470PF 8121N capacitor 33pF 6kV syfer 8151 CAP 12nF 50V 8165M
Contextual Info: Radial Leaded capacitors Syfer Technology produces a wide range of dipped radial leaded capacitors. These are available in rated voltages of 50V up to 6kV. Although our catalogue range extends to 6kV, we are able to offer a capability for specials up to 10kV. Our larger case