1B205 Search Results

Contextual Info: HIT A CH I / O P T O E L E C T R O N I C S SIE D • 44=1b205 G D l l D l b SOT ■ HIT4 GN6015A Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-220AB High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max • Low on saturation voltage

GN6015A

Abstract: HITH713 Hitachi Scans-001
Contextual Info: HITACHI / OPTOELECTRONICS SIE D • 44=1b205 GDllDlb SOT ■ HIT4 GN6015A Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-220AB High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max • Low on saturation voltage

Contextual Info: A C O M P A N Y OF MODEL1B NTC Thermistors TECHNO Uncoated Disc, M aterial ‘B’, 2.5Q to 50<K2 APPLICATIONS Engineered for • Temperature compensation • Temperature measurement • Temperature control • Meter compensation • Voltage regulation •

ct3001

Abstract: 20H3 DNFR18-250FIB CT-300-1 DNFR14-205FIB DNFR14
Contextual Info: THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. ±.010 W I RE ST OP TERMINAL 5 . 33 NOTES; 1. UL LI ST ED AND CSA C E R T IF IE D FOR; A. 600V MAX VO LT AG E RATING B. 2 2 1 °F (105°C) MAX TEMP RATING

Contextual Info: THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. ±.010 W I RE ST OP TERMINAL 5 . 33 NOTES; 1. UL LI ST ED AND CSA C E R T IF IE D FOR; A. 600V MAX VO LT AG E RATING B. 2 2 1 °F (105°C) MAX TEMP RATING

2SK554

Abstract: 2SK555 SA-2A diode DG130 ah7a
Contextual Info: 4M=lb2ÜS DG130Ö7 b43 blE T> 2SK554,2SK555 I H I T 1! HITACHI/COPTOELECTRONICS S ILIC O N N-CHAIMNEL M O S FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance. • High Speed S w itch in g . • Low Drive C urrent. • No Secondary Breakdown.

resistor NTC 10 0539

Abstract: 1b27 LEM 543 ntc 2,0 0539 Mil-T-23648 1B117 1b33 1B07 1B152 1b28
Contextual Info: A COMPANY MODEL 1B NTC Therm istors OF TECHNO Uncoated Disc, M aterial ‘B’, 2.5Q to 500Q APPLICATIONS Engineered for • Amplitude control • Temperature compensation • Liquid level indication • Temperature measurement • Flow measurement • Temperature control

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

KM23C16205BSG

Contextual Info: KM23C16205BSG CMOS MASK ROM 16M-Bit 1Mx16 /512KX32 CMOS MASK ROM FEATURES G E N E R A L D E SC R IP T IO N • Switchable organization 1,408,576 x 16(word mode) 524,288 x 32{doubte word mode) • Fast access time Random A c c e ss: 100ns<Max.) Page Access

2B405

Abstract: 2B224 6B822 6B103 6B104 2B154 6b102 5b333 2B-45 4B153
Contextual Info: E L P AC ELEKS/ ELPAC CflPN b 7 E D 321273T OOQOSb'i 035 METALLIZED POLYPROPYLENE jut PM Seriaa ►Excellent Dissipation Factor ►Low E.S.R. ►Outstanding Temperature Stabilit Performance Characteristics Temperature Range: Dissipation Factor @ +25°C: Insulation Resistance @ +25°C: