HIT47 Search Results

Contextual Info: H I T A C H I / O P T O E L E C T R O N IC S 51E D • m ib B O S Q011023 ■ H IT M T - a P i'lS GN6020C Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-3P High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max

GN6030C

Contextual Info: HITACHI/ OPTOELECTRONICS SIE D GD11D30 WÊ «HIT4 ' T ^ 3 c ì - 1Z b GN6030C Silicon N Channel IGBT HITACHI Application Mar. 1992 TO—3P High speed power switching Features • High speed switching tf —200 ns typ, 400 ns max • Low on saturation voltage

GN6020C

Contextual Info: HITACHI / OPTOELECTRONICS 51E B m MMSbaOS GG11023 7‘t‘l • H I T M GN6020C Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-3P High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max • Low on saturation voltage

GN6050E

Abstract: Hitachi Scans-001
Contextual Info: HITACHI/< O P T O E L E C T R O N I C S SIE 1> • MM'ibSOS 0 0 1 1 0 3 7 S33 ■ H I T 4 13 <?-/& GN6050E Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-3PL High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

Contextual Info: HITACHI/ O P T O E L E C T R O N I C S SIE D WÊ MMI b SO S G D 1 1 0 3 0 TAT • H I T 4 GN6030C Silicon N Channel IGBT HITACHI Application Mar. 1992 T O -3 P High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max • Low on saturation voltage