1L MARKING DIODE Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon LMBT6428LT1G LMBT6429LT1G z Pb-Free Package is Available. ORDERING INFORMATION Device Marking Shipping LMBT6428LT1G 1KM 3000/Tape & Reel LMBT6428LT3G LMBT6429LT1G 1KM 1L 10000/Tape & Reel LMBT6429LT3G

TN2106ND

Contextual Info: TN2106 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: b v dss/ ^DS ON V(3S(tfi) BVdgs (max) (max) TO-236AB* TO-92 Die N 1L* 60V 2 .5 0 2.0V TN2106K1 TN2106N3

MMBD1503

Abstract: MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720
Contextual Info: 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 A11 A13 A14 A15 1 2 3 3 1504 1503 3 1 2 1 1505 2 High Conductance Low Leakage Diode Sourced from Process 1L.

Contextual Info: Transistors IC Transistors Diodes SMD Type SMD Type Product specification KC846A,B/KC847A,B,C/KC848A,B,C BC846A,B/BC847A,B,C/BC848A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion 0.4

ST03D-140

Abstract: diode zener ZD 15 diode zener ZD 75 v diode zener ZD 200 U180 tl251c st03d
Contextual Info: Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode • ftM U ! OUTLINE S T 3 D - 1 4 Unit:mm Weight 0.65 g Package : A X 10 145V 300W ftft 26.5 26.5 ¡ > 4 .4 Feature ° - ■ Power Zener Diodes with FRD ■ Axial Package

Contextual Info: Super Fast Recovery Diode Twin Diode M im OUTLINE S20LC20UST 200V 20A Feature •g y -rx • Low Noise • trr=25ns • tnr=25ns • 9 jc ö V J \£ U • Small 8 jc Main Use • Switching Regulator • 7 5 -f;n -J U • Fly Wheel • f^ .O A • Home Appliance, Office Automation

Contextual Info: SIEMENS BAR 64-07 Silicon PIN Diode • • • • High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz Low resistance and short carrier lifetime For frequencies up to 3 GHz Type BAR64-07 Marking PTs Ordering Code

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

Contextual Info: Surface Mount Zener Diodes Dynamic Resistance Marking Code Zener1 Voltage @ IZT Test Current VZ V I ZT(mA) BZX384-C13 BZX384-C15 BZX384-C16 BZX384-C18 BZX384-C20 BZX384-C22 BZX384-C24 BZX384-C27 BZX384-C30 BZX384-C33 BZX384-C36 BZX384-C39 WJ WK WL WM WN

BAS29

Abstract: BAS31 BAS35 diode 7B4
Contextual Info: • E3A33T4 DDDG716 7b4 ■ BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A S 2 9 - L20 BAS31 - L21

diode smd marking "OA"

Abstract: SMD DIODE BOOK smd diode je smd diode T3 smd switching diode book smd diode marking NN DF10NC15 J532 DIODE SMD 10A tim-st
Contextual Info: Schottky Barrier Diode Twin Diode M f m O UTLINE Package : STO-220 DF1 0 N C 15 P y K L l°- ffl Unit-mm Weight 1.5g (Typ) 10.2 150 V 10A Feature • SM D ' SM D 1L o w lR=0 .2 m A • •(SlR=0.2mA 1R e s is ta n c e fo r therm al run -aw ay < IA Main Use

BAS70-07

Contextual Info: BAS70-07 SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS • ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE DESCRIPTION Low turn-on and high breakdown voltage diodes

Contextual Info: 1SS349 TOSHIBA TOSHIBA DIODE i SS349 SILICON EPITAXIAL SCH OTT KY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. • • • +0.5 2 5 -0.3 + 0.25 1.5 - 0-15 Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : I r = 50//A (Max.) Small Package

TRANSISTOR SMD MARKING CODE p1

Abstract: TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28
Contextual Info: COMCHIP Small Signal Transistor SMD Diodes Specialist BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation O PCM: 0.15W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature

SOD-123 a34

Abstract: diode 2dl
Contextual Info: FM120-M+ FM1L WILLAS THRUTHRU .0A GENERAL PURPOSE RECTIFIERS - 50V- 1000V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SM&-L PACKAGE MCC FM1200-M+ FM07L Pb Free Product SOD-123+ PACKAGE


Features







design, excellent power dissipation offers

IMBT4401

Contextual Info: DIODES INC 32E D • 2Ô4Ô7T3 0DDD3b3 S * D I I SURFACE MOUNT TRANSISTORS NPN T R A N SIST O R S - TO-236 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) 1M 1N 6T 6U 6R 6S h FE @ 50-150 100-300 50-150 100-300 100-300 100-300 V ce/ I c VcE SAT V /m A

smd diode a7

Contextual Info: Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAV99W QUICK REFERENCE DATA SYMBOL CONDITIONS UNIT Vr continuous reverse voltage

25ls2513

Abstract: IN916 AM25LS2513 5962-87542
Contextual Info: D IS TR IB U TIO N S T A T E M E N T A. Approved for public release; distribution is unlim ited. DESC FO R M 193 M A Y 86 This Material Copyrighted By Its Respective Manufacturer 1. SCOPE 1.1 Scope. This drawing describes device requirements fo r class B m icro circu its in accordance with

car ignition

Abstract: diode Cathode indicated by blue band automotive ignition car Stability Cathode indicated by blue band BYX134GPS SF6 gas sod118
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Product specification High-voltage car ignition diode BYX134GPS FEATURES DESCRIPTION • G lass passivated Rugged glass package, using a high tem perature alloyed construction.

Contextual Info: £ÿj SGS-THOMSON noœilLlora [iïlBCi DB3 /DB4 / DC34 TRIGGER DIODES FEATURES • V bo : 3 2 V /3 4 V /4 0 V VERSIONS . LOW BREAKOVER CURRENT DESCRIPTION High reliability glass passivation insuring param eter stability and protection against junction contam ination.

IMBT4403

Abstract: IMBT4401 IMBT2222 6u sot-23 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
Contextual Info: DIODES INC 32E » • 20407^3 00003b3 S H D I I SURFACE M O U N T TRA N SISTO RS -r^-oo, NPN T R A N S IS T O R S -T O -2 3 6 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) Type N u m b er M a rk in g Code IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222

DIODE T25 4 Jo

Abstract: cd photo diode
Contextual Info: SONY SLD322XT High Pow er Density 0.5 W Laser Diode D escription Package O utline Unit : mm The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d "1. C om pared lo the SLD 300 Series, Ihis laser diode has a high brightness

SEMTECH MARKING sot-143

Contextual Info: SLVE2.8 SEMTECH Today*« Rauiki.1 & Low Voltage TVS Diode for ESD and Latch-Up Protection SLVG2.8 Revised - February 17, 1999 DESCRIPTION FEATURES The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and

A132A

Abstract: MA132HK UN9115 ir con basic un911
Contextual Info: —5/ SS Mini Type 3-pin Package Transistors, Diodes m m ü s s = ^ s a o s m / ' f - y - ÿ — v i i , K t # w s = - s y ( 3 i £ i L) M " 7 ' r - M tt £ • iiÉ *» S 5 -li!(3 « i)(Z j:tA .\ • 8mmx - 1"> ? (7) f à 5 3 % C 7 ) f l ï o « , & « g » H » « ICJÎ *S^ nlfiÊo