1N MARKING Search Results

IN5552

Abstract: lN555 N5550 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556 1N5557
Contextual Info: PIV lo 25°C Volts Amps VF IR Volts /iA 1.0 1.0 1.0 1.0 1.0 1.0 Type No. 1N 5550 1N 5551 1N 5552 1N 5553 1N 5554 Zener Type Ho. IN 5 5 5 5 1N 5556 1N 5557 1N 5558 1N 5559 IN 5 5 6 0 1N 5561 1N 5562 1N 5563 1N 5564 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0

SD5171

Abstract: IN5807 1N6811 DO-203AB Package 1N580a 1N5420 1N5415 1N5416 1N5417 1N5418
Contextual Info: OPTEK TECHNOLOGY INC 4ÖE D • L^TflSflO D0G1427 TT1 ■ OTK FAST RECOVERY RECTIFIERS 1N 5415-1N 5420; 1N 5615-1N 5623; T 0 3-15 1N 5802-1N 5811 Fast Recovery Rectifiers This series of high speed rectifiers are constructed using Optek's "double-slug" technique, a voidless monolithic construction which is

lN555

Abstract: 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556 1N5557 1N5558 1N5559
Contextual Info: Type No. 1N 5550 1N 5551 1 N 55 5 2 1N 5553 1N 5554 Zener Type Ho. PIV lo 25°C Volts Amps 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0 5.0 Zener Voltage at IZT @ mA Volts IN 5555 1N5556 1N5557 1N5558 1N 5559 IN 5560 1N 5561 33.0 43.7 54.0 191.0 6.8 7.5

1198A

Abstract: 1196-A RN820
Contextual Info: Gl 1N 248 B -» 1N 250 B 1N 1195 A -> 1N 1198 A RN 820/RN 1120 SGS-THOMSON tUEOTlEiMOSS S G S-THOnSON RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY . LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values Value Unit Average Forward Current*

SMD 1N60

Abstract: SMD 1N60 diode 6072a 1N56 1N60 diode SMD 6072A TUBE 1N6072 diode 1n60 sod6 package 1N60 MOS
Contextual Info: rz j S G S -T H O M S O N ^ 7£ 1N 5634A /1N 5665A 1N 6040A /1N 6072A TRANSIL FEATURES • PEAK PULSE POWER= 1500 W @ 1ms. ■ BREAKDOWN VOLTAGE RANGE : From 11V to 200 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps 0 V to VBR .

C456A

Abstract: FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FAIRCHILD FDLL
Contextual Info: 1N/FDLL 456/A / 457/A / 458/A / 459/A 1N/FDLL 456/A - 1N/FDLL 459/A COLOR BAND MARKING DEVICE FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL

1N1183

Abstract: 1N3768
Contextual Info: SCS-THOMSON 1N 1183/84/1N 1186 —> 90 1N 3766/1N 3768 [» [H i [i[L Œ O T 2 *S RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORW ARD VOLTAGE DROP A B S O L U T E R A T IN G S (limiting values P aram e ter Value Unit

transistor c 458

Abstract: 1N 457 equivalent RED Color band DIODES 65 diode 1N FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A
Contextual Info: 1N/FDLL 456/A / 457/A / 458/A / 459/A Discrete POWER & Signal Technologies N 1N/FDLL 456/A - 1N/FDLL 459/A COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 1ST BAND 2ND BAND

Contextual Info: 5 bE D • 7=12=1237 G G 4 1 7 7 b SCS-THOMSON [M O ^ a m tK g lM K S 2bS ■ SGTH 1N 1183/84/1N 1186 -> 90 1N 3766/1N 3768 G S-THOMSON s T - O h H RECTIFIER DIODES ■ STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY . LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values

IN750

Abstract: 1N239 1N47A IN4858 1N236 1N701 649-1 diode 1N665 1N236 diode DIODE 1N649
Contextual Info: Zener Type No. Zener Volt age 3t 1ZT @ mA Volts Zener Voltage Tolerance Max. Zener Impedance @ Ur Ohms S u ffix A 0 .2 0 Device Package 150m w Case A 8 1 N 2 2 5 ÎD 1N 2 2 6 il ) 1N 2 27 (1 ) 7 .5 • 1 0 .0 9 .0 • 12 .0 1 1 .0 • 14 .5 1N 228H ) 1N 229

Contextual Info: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z Pb-Free Package is Available. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel 3000/Tape & Reel 1M LMBTA14LT3G 1N 10000/Tape & Reel

1N4475

Abstract: 1N4465 1N6490 1N4474 ic 4496 1N4477 1N4460 1N4471 1N4469 1N4467
Contextual Info: 1N 4460 thru 1N 4496 and 1N 6485 thru 1N6491 s c o u s i m i . t. a / . ☆JA N S* FEATURES • • • • • • • • 1.5 WATT GLASS ZENER DIODES M icrom iniature package. High perform ance characteristics. S table operation at tem peratures to 200°C.

551-3209F

Abstract: I-409 5510209F 551-0209F 551-3009F 551-0309F 1MA551
Contextual Info: O P E R A T 1NG PART N U M B E R F ORWARD VOLTAGE/CURRENT M 1N TYP Drwr Der C H A R A C T E R 1S T I C S T i c n u i PEAK AT T* = 25 °C W A V E L E N G T H n m LUMI NOUS M 1N TYP 5.6 16.0 If M 1N @ 1o m a 585 2.2 6.3 V M 1N @ 10/*A 650 3.6 10 If : If z

1N1341

Abstract: 1N3988 1348B 1346b 1341B 1344B
Contextual Info: SGS-THOMSON 1N 1341B/42B/1N 1344B -4 48B 1N 3988/1 M 3990 RECTIFIER DIODES • STANDARD RECTIFER . HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP A B S O L U T E R A TIN G S limiting values Unit V alu e P aram e ter Symbol A verage F o rw ard C urrent*

diode st 4148

Abstract: ST 4148 diode 4148 FDLL4148 FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies N 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 FDLL914

IN3155

Abstract: IN3157 BL-5B IN3154 1n3156 1N3154 015G 12123 N3157 3155
Contextual Info: SbE ]> • 7 ^ 2 3 7 0041532 «S6TH s 6 S-TH4MS0N SCS-THOMSON !QJOT@«S 171 T- , h ° ^ 1N 3154,A-> 1N 3157,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values

diode t 4148

Abstract: TI 4148 FDLL916B 914/A/B FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies National Semiconductor" 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D L L 91 4 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B FD LL4148 FD LL4448 1ST BAND

Contextual Info: 1N/FDLL 456/A / 457/A / 458/A / 459/A Discrete POWER & Signal Technologies N at ion al Semiconductor 1N/FDLL 456/A -1 N/FDLL 459/A COLOR BAND MARKING DEVICE FD LL456 FD LL456A FD LL457 FD LL457A FD LL458 FD LL458A FD LL459 FD LL459A LL-34 THE PLACEMENT OF THE EXPANSION GAP

1N54080

Contextual Info: 1N 5400 thru 1N 5408 MicmemiCorp. ’ The diod e experts / SANTA ANA, CA SCOTTSDALE, A Z For more information call: 602 941-6300 3A PLASTIC SILICON RECTIFIERS FEA TU RES • • • • • • Low cost. High current capability. Low leakage. Low forward voltage.

Contextual Info: 1N 42 45 thru 1N 42 49 SANTA ANA, CA SCOTTSDALE, A Z For more information calí: 7 4) 979-8220 MILITARY RECTIFIERS FEATURES • MICROMINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • TRIPLE LAYER PASSIVATION • METALLURGICALLY RONDED • STANDARD BECOVEBY

Contextual Info: • b b 53 tm □ □ 2b ac}7 13T APX N AMER PHILIPS/DISCRETE 1N 4001ID TO 1N 4007ID bTE D J V _ SILICON DIFFUSED RECTIRER DIODES This data sheet contains a range of silicon rectifier diodes for general purpose use. QUICK REFERENCE DATA

Contextual Info: 2 ,0 0 0 V - 5 ,0 0 0 V R e c tifie rs 1N6521U 0.15 A - 0.50 A Forward Current 70 ns Recovery Time 1N 6523U 1N 6525U SURFACE MOUNT HERMETICALLY SEALED ~ ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number] Working Reverse Voltage Average Rectified Current

Contextual Info: [ZT SGS-THOMSON ^ 7 # . ra«mi@TO » g® 1N 3879 -» 1N 3883 FAST RECOVERY RECTIFIER DIODES • FAST RECOVERY TIME ■ LOW FORWARD RECOVERY TIME APPLICATIONS ■ DC AND AC MOTOR CONTROL ■ SWITCH MODE POWER SUPPLY ■ HIGH FREQUENCY CHOPPERS ■ HIGH FREQUENCY RECTIFIERS

Contextual Info: Micmsemi • m m Chatsvrorth, CA m 1N 5391G P thru 1N 5399G P 9261 Owensmouth Ave, Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • • 1.5 Amp Glass Passivated Rectifier 50 -1000 Volts Low Current Leakage Low Forward Voltage