1N120 Search Results

DIODE 1N1206A

Abstract: 1n1124r 1N1124A 1N1126A 1N1128A 1N1202A 1N1204A 1N1206A 1N3649 1N3671A
Contextual Info: INCH-POUND MIL-PRF-19500/260F 10 December 1999 SUPERSEDING MIL-PRF-19500/260E 6 August 1999 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A AND AR VERSIONS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

1N1206RA

Abstract: i2t graph 1N1199A 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N5331
Contextual Info: 1 Silicon Rectifiers 1N1195 SE E PAG E 203 1N1199A-1N1206A 1N1199RA-1N1206RA 1N3670A-1N3673A 1N5331 These diffused junction rectifiers are designed specifically to provide high perform ance fo r ap p li­ cations up to 22 am peres A verage F orw ard C u rren t in single-phase applications w ith repetitive

Contextual Info: 1N1202A+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current12 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.240 V(FM) Max.(V) Forward Voltage600m @I(FM) (A) (Test Condition)12 @Temp. (øC) (Test Condition)25’

Contextual Info: 1N1206A+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current12 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.240 V(FM) Max.(V) Forward Voltage600m @I(FM) (A) (Test Condition)12 @Temp. (øC) (Test Condition)25’

1N1206A

Contextual Info: <Ss.mi-Condu.ctoi ZPioduoti, Jnc. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon Avalanche Power Rectifiers 1N1202A-1N1206A 1N3671A-1N3673A Millimeter DIrn. Inches Minimum Maximum Minimum

1N120P

Contextual Info: Preliminary Technical Information PolarHVTM Power MOSFET IXTA 1N120P IXTP 1N120P VDSS ID25 RDS on = 1200 = 1.0 ≤ 20 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 1200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

1N188A

Abstract: pj 87 1N1184 1N1206RA 1N1183 1N1202RA 1N1204A 1N1204RA 1N1206A 1N367
Contextual Info: POWER RECTIFIERS, Stud Package, Standard Recovery IS I P art N um ber Ma x im um A v e ra g e R e c tifie d C u rre n t a t I. A m p s T, ( C) 1N12Ô2A 1N1204A M a xim u m Peak F o rw a rd V oltage at I, „ and T .= 2 5 -C M a x im u m M a x im u m Rev C u rre n t Rev C u rre n t

Contextual Info: 1N1199A thru 1N1206AR Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 12 A Features • High Surge Capability • Types up to 1000 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

A1W TRANSISTOR

Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Contextual Info: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201

Contextual Info: 1N1201 Standard Rectifier trr more than 500ns 4.88 Diodes Silicon Rectifiers General-. Page 1 of 1 Enter Your Part # Home Part Number: 1N1201 Online Store 1N1201 Diodes Standard Rectifier (trr more than 500ns) Transistors Integrated Circuits Optoelectronics

1N119

Abstract: 1N120
Contextual Info: 1N1199B thru 1N1206B MOTOROLA MEDIUM-CURRENT SILICON RECTIFIERS M E D IU M -C U R R E N T S ILIC O N RECTIFIERS Compact, hig h ly e ffic ie n t silicon re ctifie rs fo r m e diu m -curre n t a pp licatio n s requiring: 5 0 - 6 0 0 VOLTS 12 A M PERES • High C urrent Surge —

I2F60

Abstract: TJ259
Contextual Info: N T fîN nternational IC2RRectifier r7 TN Diodes 4 V •fsm Part Number VM * M •fav @ A) tc (C) 'f(AV) (V) 50 Hi (A) éOHz RQK(DC) (A) (°C/W) Notes Fax on Demand Number Cose Outline Key Standard Recovery 1N1203A 300 12 150 1.35 230 240 2 9 12 20084 12F40

Contextual Info: DIGITRON SEMICONDUCTORS 1N1199 A,B -1N1206(A,B) SILICON POWER RECTIFIER MAXIMUM RATINGS Symbol 1N1199 Peak reverse voltage Parameter VR 50V Operating & storage temperature range TJ, Tstg -65 to +200°C RθJC 2.5°C/W junction to case Maximum thermal resistance

INI200A

Abstract: 10-32 UNF 1N1206A 1N1199A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A
Contextual Info: EDAL INDUSTRIES INC 4SE D • aO^S?]^ 000D27S T77 H E D L FLATS PIV SEE CHART *0 12A @ Js 240 AMPS Vf 1.3 V @ Zr 3.0 mA @ @ STYLE DQ4 FOR REVERSE POLARITY USE SUFFIX R PART NUMBER 1N1199A INI200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A PIV 50 100 150

Contextual Info: 1N1204A+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current12 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.240 V(FM) Max.(V) Forward Voltage600m @I(FM) (A) (Test Condition)12 @Temp. (øC) (Test Condition)25’

Contextual Info: 1N1204RA+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current12 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.240 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)40 @Temp. (øC) (Test Condition)25#

Contextual Info: 1N1204A+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current12 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.240 V(FM) Max.(V) Forward Voltage600m @I(FM) (A) (Test Condition)12 @Temp. (øC) (Test Condition)25’

Contextual Info: 1N1206A+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current12 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.240 V(FM) Max.(V) Forward Voltage600m @I(FM) (A) (Test Condition)12 @Temp. (øC) (Test Condition)25’

1N1202RA

Abstract: 1N1202A 1N1204A 1N1204RA 1N1206A 1N1206RA 1N3671A 1N3671RA 1N1202A JANTX microsemi
Contextual Info: Military Silicon Power Rectifier 1N1202A—1N1206A,1 N3671 A—1N3673A Dim Notes: 1. 1 0 -3 2 UNF3A 2. Full threads within 2 1 /2 threads 3. Standard Polarity; Stud is Cathode Reverse Polarity: Stud Is Anode A B C D E F G H J M N P Inches Millimeter Minimum Maximum Minimum Maximum Notes

IN1190A diode

Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series

1N1206A JANTX

Abstract: 1N1202A 1N1202AR 1N1204A 1N1204AR 1N1206A 1N1206AR 1N3671A 1N3673A 1N1202A JANTX microsemi
Contextual Info: Military Silicon Power Rectifier 1N1202A-1N1206 A, 1N3671A-1N3673A Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 - 3 2 UNF3A 2. Full threads within 2 1 /2 threads 3. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is

IN1199A

Abstract: in1199
Contextual Info: IN1199A M O TO R O LA thru 1N1206A MEDIUM-CURRENT SILICON RECTIFIERS M E D IU M -C U R R E N T SILIC O N RECTIFIERS S ilic o n r e c tifie r s fo r m e d iu m - c u rr e n t a p p lic a tio n s re q u irin g : • H ig h C u rre n t S u rg e — 5 0 - 6 0 0 VOLTS

1N4012

Abstract: A 260 D
Contextual Info: Standard Recovery Rectifiers Micmsemi 4 P art Num ber 1N1206A 1N1206B 1N1206B 1N4508 1N1206A 1N1206A 1N1206 PPR41206 R20460 S20460 UT8160 1N3670 1N3670A 1N4012 1N3671 1N3671A 1N4013 1N4509 JAN1N3671A JANTX1N3671A JANTXV1N3671 PPR4120B R20480

Contextual Info: INTERNATIONAL SEMICONDUCTOR, INC. 1N1199A thru 1N1206A M EDIUM CURRENT SILICO N RECTIFIERS V O L T A G E - 50 TO 600 Volts C U R R E N T - 12 Amperes • High Surge Current - 240 Amperes at T J= 2 0 0 °C ■ Peak Performance at Elevated Temperatures - 12 Amperes at T c = 1 5 0 °C