1N5711 DIODE Search Results

1N5712 spice

Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented

jantx diodes

Abstract: 1N5711 JANTX
Contextual Info: 1N5711 and 1N5711-1 • 1N5711 AVAILABLE IN JAN, JANTX AND JANTXV • 1N5711-1 AVAILABLE IN JAN, JANTX AND JANTXV and • 1N5712-1 AVAILABLE IN JAN, JANTX AND JANTXV 1N5712-1 • SCHOTTKY BARRIER DIODES and • HERMETICALLY SEALED DSB5712 and DSB2810 • METALLURGICALLY BONDED -1

1N5712 JANTX

Abstract: 1N5712-1
Contextual Info: • 1N5711-1 AVAILABLE IN JAN, JANTX AND JANTXV 1N5711 and 1N5711-1 • 1N5712-1 AVAILABLE IN JAN, JANTX AND JANTXV and • SCHOTTKY BARRIER DIODES 1N5712-1 • HERMETICALLY SEALED and • METALLURGICALLY BONDED -1 DSB5712 and DSB2810 • DOUBLE PLUG CONSTRUCTION

MIL-PRF-19500-444

Abstract: JANTX, JX, JAN, Schottky 1n5711 equivalent 1N5711-1 DSB5712 DSB2810 1N5711 1N5712 1N5712-1 1N6857-1
Contextual Info: • 1N5711-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 JANTX, JANTXV AND JANS

1n5711 diode

Abstract: 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 JANTX, JX, JAN, Schottky
Contextual Info: • 1N5711-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 JANTX, JANTXV AND JANS

1N5712 JANTX

Abstract: 1N5712-1 JANTX diode 1n5711 1N5711 JANTXV 1N5711-1 N5711 1N5711 1N5712 1N5712-1 DSB2810
Contextual Info: • 1N5711-1 AVAILABLE IN JAN, JANTX AND JANTXV 1N5711 and 1N5711-1 • 1N5712-1 AVAILABLE IN JAN, JANTX AND JANTXV and • SCHOTTKY BARRIER DIODES 1N5712-1 • HERMETICALLY SEALED and • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION DSB5712 and DSB2810

JANTX, JX, JAN, Schottky

Abstract: MIL-PRF-19500-444 1N5711 1n5711 equivalent 1N5711-1 jan 1n5711 JANTX, JX, JAN 1N5712-1 1N6857-1 1N6858-1
Contextual Info: 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 • 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED

Contextual Info: Schottky Diodes 1N5711 Series DESCRIPTION The 1N5711 is a Schottky diode designed with a metalized guard ring to achieve a high voltage breakdown. Features • RoHS Compliant • High voltage breakdown • UHF/VHF detection/pulse applications • Diode matching available

1n5711

Contextual Info: Schottky Diodes 1N5711 Series DESCRIPTION The 1N5711 is a Schottky diode designed with a metalized guard ring to achieve a high voltage breakdown. Features • RoHS Compliant • High voltage breakdown • UHF/VHF detection/pulse applications • Diode matching available

IR 10e

Abstract: 1N5711 spice 1N5711 1N5712 spice 1n5711 equivalent 5082-2826 F 5082 1N5712 IN5712 RS-296-D
Contextual Info: Agilent 1N5711, 1N5712, 5082-2300 Series, 5082-2800 Series, 5082-2900 Schottky Barrier Diodes for General Purpose Applications Data Sheet Features Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a

1N5711 spice

Abstract: 1N5711
Contextual Info: 1N5711 SCHOTTKY BARRIER SWITCHING DIODE SPICE MODEL: 1N5711 Features • · · · Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Glass

Contextual Info: 1N5711-1 1N5711US-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5111, REV. - SJ SX SV SS SWITCHING DIODE 1N5711-1, 1N5711US-1 • Hermetic, non-cavity glass package  Metallurgically bonded  Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5D

1N5711US-1

Abstract: 1N5711-1 1N5711
Contextual Info: 1N5711-1 1N5711US-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5111, REV. - SJ SX SV SWITCHING DIODE 1N5711-1, 1N5711US-1 • Hermetic, non-cavity glass package • Metallurgically bonded • Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5D

1N5711

Contextual Info: 1N5711 asii SCHOTTKY BARRIER DIODE DESCRIPTION: PACKAGE STYLE DO-35 The 1N5711 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS If 15 mA Vr 70 V Pd i s s 250 mW @ Ta = 25 0C

diode t25 13 Go

Abstract: 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811
Contextual Info: 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high break­down voltage. Packaged in

Contextual Info: 1N5711 asi SCHOTTKY BARRIER DIODE DESCRIPTION: The 1N5711 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS If 15 mA Vr 70 V P diss 250 mW @ Ta = 25 °C Tj -65 °C to +200 °C

Contextual Info: 1N5711 THUR 1N6263 SMALL SIGNAL SCHOTTKY DIODES DO-35 FEAT URES MECH AN ICAL DAT A Case: Polarity: Weight: ABSOLUT E RAT IN GS LIMI T IN G VALU ES ELE CT RICAL CH ARACTER IST ICS uA 1 RATINFS AND CHARACTERISTICS CURVES 1N5711 THUR 1N6263 Fig.1 Typical variation of fwd. curr ent vs for war d. voltage for

N5711* diode Die

Abstract: 1N5712 1N5711 DIE n5711 1N5711 CD2810 CD5711 CD5712 DSB5712
Contextual Info: • 1N5711 AVAILABLE IN JANC • 1N5712 AVAILABLE IN JANC • SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION • SILICON DIOXIDE PASSIVATED CD5711 and CD5712 and CD2810 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES MAXIMUM RATINGS

1n5711 diode

Contextual Info: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of

5082-2080

Abstract: 5082-2826 5082-2835 MTTF 5965-8870E Y2272 DOD-HDBK-1686
Contextual Info: Passivated General Purpose Schottky Diodes Reliability Data The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the 1N5711/12 5082-2800/04/05

Contextual Info: 1N5711+JAN Diodes General Purpose Schottky Rectifier Military/High-RelY I O Max.(A) Output Current15m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage70 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage410m @I(FM) (A) (Test Condition)1.0m

C8510

Contextual Info: I n ter n a tio n a l 1N5711 & 1N5711-1 S e m ic o n d u c to r , I n c . C8510 & C8511 SCHOTTKY BARRIER DIODES FEATURES 1 H e rm e t ic a lly S e a le d M e t a l u r g ic a l ly B o n d e d D o u b le Plug C o n s t ru c t io n :o .06 8/.0 73 1.73/1.93 1.0 0

Contextual Info: 1N5711 SCHOTTKY BARRIER SWITCHING DIODE Features_ • • • • Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection I T D Mechanical Data_ • • • • • DO-35

1NS818

Contextual Info: SCHOTTKY RECTIFIER DIODES, AXIAL, GLASS Peak Forward Peak Surge Current Inverse $ 9 3ms Voltage Superimposed I . . £ -B - 3 *> M -1 — Maximum Average Rectified •> <A T„ *C) PtV |V) 1N5711 C 8 5 t0 C8St1 SD101A SDtO tB SD101C I. (Amps)